5962-8766106XA
Abstract: 5962-8766102XA qml-38535 V05 SMD CODE MARKING 5962-8766101xa SMJ27C128-20JM
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Added Arrhenius equation for unbiased bake under margin test method A, back end margin test step C. Corrected military part numbers for device types 01 and 02. Technical changes made to 1.2.2, table I, figure 1, figure 2, figure 4, figure 5, 4.3.1, and table II. Added vendor
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Delta W16
Abstract: 27C128 C128 CY27C128 27C128-45
Text: CY27C128 128K 16K x 8ĆBit CMOS EPROM CY27C128 automatically powers down into a lowĆpower standĆby mode. The CY27C128 is packaged in the industry standard 600Ćmil DIP and LCC packages. military) The CY27C128 is also available in a CerĆ D Low power DIP package equipped with an erasure
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CY27C128
CY27C128
600mil
Delta W16
27C128
C128
27C128-45
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27C128
Abstract: 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 CY27C128 c1281
Text: fax id: 3011 1CY 27C1 28 CY27C128 128K 16K x 8-Bit CMOS EPROM Features CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.
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CY27C128
CY27C128
384-word
27C128
27C128-200
eprom 27C128
27C128 eprom
transistor C128
27C1
C128
c1281
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27C128 General Semiconductor
Abstract: 27c128
Text: NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C128 is a high performance 128K UV Erasable Electri cally Program mable Read O nly Memory. It is m anufactured with
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NM27C128
072-Bit
27C128
27C128 General Semiconductor
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27C128
Abstract: MSM27C128AS 27C1 27C128-25 MAX165 MAX200 MAX250 MSM27C128-30 t24as
Text: OKI semiconductor MSM27C128AS 1 6384 x 8 BIT UV ERASABLE ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORY GENERAL DESCRIPTION The MSM 27C128 is a 16384 words x 8 bit ultraviolet erasable and electrically programmable read-only memory. Users can freely prepare the memory content, which can be easily changed, so
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MSM27C128AS
MSM27C128
MAX200
MSM27C1
MAX250
MAX300
MSM27C128-30)
27C128
MSM27C128AS
27C1
27C128-25
MAX165
MSM27C128-30
t24as
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27C010
Abstract: 27C020 27C040 27C080 27C128 27C256 27C512 NM27C128
Text: NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C 128 is a high performance 128K UV Erasable Electri cally Program mable Read O nly Memory. It is m anufactured with
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NM27C128
072-Bit
27C010
27C020
27C040
27C080
27C128
27C256
27C512
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27c32
Abstract: EPROM 27C32 27c32 eprom EPROM 2764 nmc27cp128q300 27C128 eprom 27C16 Vpp of 27256 eprom 2716 eprom datasheet 27C512
Text: NMC27C1023 VJFÊ National /2 /m Semiconductor ÆUm Corporation ADVANCED INFORMATION NMC27C1023 1,048,576-Bit 128k x 8 UV Erasable CMOS PROM General Description Features The NMC27C1023 is a high-speed 1024k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited
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NMC27C1023
576-Bit
NMC27C1023
1024k
32-pin
tl/d/8805-2
NMC27CP128
NMC27CP128Q
27c32
EPROM 27C32
27c32 eprom
EPROM 2764
nmc27cp128q300
27C128
eprom 27C16
Vpp of 27256 eprom
2716 eprom datasheet
27C512
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27C32
Abstract: 27c32 eprom NMC27C64Q150 NMC27C64Q250 27512 27C128 27C256 27C512 NMC27C64 NMC27C64QE
Text: NMC27C64 ygA National æ jê Semiconductor NMC27C64 65,536-Bit 8k x 8 UV Erasable CMOS PROM General Description Features The NMC27C64 is a high-speed 64k UV erasable and elec trically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation
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NMC27C64
536-Bit
28-pin
27C32
27c32 eprom
NMC27C64Q150
NMC27C64Q250
27512
27C128
27C256
27C512
NMC27C64QE
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27C32
Abstract: NMC27C64Q250 27C128 27C256 27C512 NMC27C64 NMC27C64QE EPROM 27C32 NMC27C64Q-150 NMC27C64QE200
Text: NMC27C64 Juâ National Semiconductor NMC27C64 65,536-Bit 8k x 8 UV Erasable CMOS PROM General Description Features The NMC27C64 is a high-speed 64k UV erasable and elec trically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation
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NMC27C64
536-Bit
NMC27G64
28-pin
dev7C64
NMC27C64S
NMC27C64S.
27C32
NMC27C64Q250
27C128
27C256
27C512
NMC27C64QE
EPROM 27C32
NMC27C64Q-150
NMC27C64QE200
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27C32
Abstract: 27c32 eprom NMC27C16 NMC27C16-55 eprom 27c64 NMC27C16-35 27C128 27C256 27C64 MM2716
Text: NMC27C16 ZgA National Æ Â Semiconductor NMC27C16 16,384-Bit 2048 x 8 UV Erasable CMOS PROM General Description Features The NMC27C16 is a high speed 16k UV erasable and elec trically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation
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NMC27C16
384-Bit
NMC27C16
24-pin
27C32
27c32 eprom
NMC27C16-55
eprom 27c64
NMC27C16-35
27C128
27C256
27C64
MM2716
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NMC27C64
Abstract: 27256 rom
Text: NMC27C64 &N a t i o n a l Semiconductor NMC27C64 65,536-Bit 8192 x 8 CMOS EPROM General Description Features The NMC27C64 is a 64K UV erasable, electrically repro grammable and one-time programmable (OTP) CMOS EPROM ideally suited for applications where fast turn
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NMC27C64
NMC27C64
536-Bit
28-pin
32-pin
27C64
000A-4000A
27256 rom
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NMC27C32
Abstract: NMC2732 27C216 NMC27C32EH-45 27C128 27C256 NMC27C32E-45 NMC27C32HE-45 NMC27C32-35 P2CMOS
Text: NMC27C32 i/W \ National Æ à Semiconductor NMC27C32 32,768-Bit 4096 x 8 UV Erasable CMOS PROM General Description Features The NMC27C32 is a high speed 32k UV erasable and elec trically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation
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NMC27C32
768-Bit
NMC27C32
24-pin
NMC2732
27C216
NMC27C32EH-45
27C128
27C256
NMC27C32E-45
NMC27C32HE-45
NMC27C32-35
P2CMOS
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IC 27c32
Abstract: ts 27c16 NMC27C256BQ NMC27C256
Text: NMC27C256BN NATL SEUICOND {MEMORY> IDE D | bSDHEb 00^1540 "T - National æ æ Semiconductor b | PRELIMINARY NMC27C256BN High Speed Version 262,144-Bit 32k x 8 One-Time Programmable CMOS PROM General Description Features The NMC27C256BN is a high-speed 256k one-time pro
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NMC27C256BN
NMC27C256BN
144-Bit
28-pin
IC 27c32
ts 27c16
NMC27C256BQ
NMC27C256
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ic programmer
Abstract: No abstract text available
Text: s ie b S D llS b NATL S E MI CO ND 00b52fc.l 33T «NSC3 MEMORY gH National SLA Semiconductor ~ r- NMC27C32B 32,768-Bit (4096 x 8) CMOS EPROM General Description Features The NMC27C32B is a 32k UV erasable and electrically re programmable CMOS EPROM, ideally suited for applica
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00b52fc
NMC27C32B
NMC27C32B
768-Bit
24-pin
ic programmer
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27C32
Abstract: 27C128 27C16 27C256 27C512 NMC27C64N 27256 block diagram 27128 block diagram NMC27C64N250 2732 rom
Text: NMC27C64N National Éjê Semiconductor NMC27C64N 65,536-Bit 8k x 8 One-Time Programmable CMOS PROM General Description Features The NMC27C64N is a high-speed 64k one-time programma ble CMOS PROM. It is ideally suited for high volume produc tion applications where low cost, la st turnaround, and low
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NMC27C64N
536-Bit
28-pin
27C32
27C128
27C16
27C256
27C512
27256 block diagram
27128 block diagram
NMC27C64N250
2732 rom
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NMC27C16BQ150
Abstract: 27C32 27C128 27C256 27C64 J24AQ NMC27C16B NMC27C16BQ 27128 pin diagram
Text: NMC27C16B National Semiconductor NMC27C16B 16,384-Bit 2048 x 8 CMOS EPROM General Description Features The NMC27C16B is a high performance 16K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern exper
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NMC27C16B
384-Bit
24-pin
bS0112b
NMC27C16BQ150
27C32
27C128
27C256
27C64
J24AQ
NMC27C16BQ
27128 pin diagram
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27C32
Abstract: IC 27c32 national semiconductor 27c32 27C16* block diagram 27C128 27C256 27C512 27C64 NMC27C64 NMC27C64N
Text: NMC27C64 National ÆÆ Semiconductor NMC27C64 65,536-Bit 8192 x 8 CMOS EPROM General Description Features The NMC27C64 is a 64K UV erasable, electrically repro grammable and one-time programmable (OTP) CMOS EPROM ideally suited for applications where fast turn
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NMC27C64
536-Bit
NMC27C64
NMC27C64Q
28-pin
27C32
IC 27c32
national semiconductor 27c32
27C16* block diagram
27C128
27C256
27C512
27C64
NMC27C64N
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Untitled
Abstract: No abstract text available
Text: b5Q112b NATL SEMICOND MEMORY 3 3 1E D March 1989 _ i i l Semiconductor 27C256 262,144-Bit (32,768 x 8) UV Erasable CMOS PROM Military Qualified 35-V General Description Features The 27C256 is a high-speed 256K UV erasable and electri cally reprogrammable CMOS EPROM, Ideally suited for ap
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b5Q112b
27C256
144-BIT
28-pin
21/3H
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NMC27C512AN
Abstract: NMC27C512ANE250
Text: NATL SEMICOND MEMORY b S G l l S b DOfc.3412 7 31E I) m National ¿¡A Semiconductor PRELIMINARY ~ 7 -V & ‘ / 3 '< 3 S General Description Features The NMC27C512AN is a high-speed 512k UV one time pro grammable CMOS EPROM, Ideally suited for applications
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NMC27C512AN
288-Bit
28-pln
32-Lead
NMC27
512AV
NMC27C512ANE250
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27C128QE
Abstract: 27C128Q
Text: NM27C128 F A I R C H IL D SEMICONDUCTOR TM NM27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM27C128 is one member of a high density EPROM Family which range in densities up to 4 Mb. The NM27C128 is a high performance 128K UV Erasable Electri
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NM27C128
NM27C128
072-Bit
27C128QE
27C128Q
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TM NMC27C32B 32,768-Bit 4096 x 8 CMOS EPROM General Description Features The NMC27C32B is a 32k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern experimentation and low power
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NMC27C32B
768-Bit
NMC27C32B
24-pin
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27C32
Abstract: EPROM 27C32 27c32 eprom 27C64 EPROM programmer qe200 programmers 2732 27C128 27C256 27C64 J24AQ
Text: NMC27C16B National â ü Semiconductor NMC27C16B 16,384-Bit 2048 x 8 CMOS EPROM General Description Features The NMC27C16B is a high performance 16K UV erasable and electrically reprogrammable CMOS EPROM, Ideally suited for applications where fast turnaround, pattern exper
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NMC27C16B
384-Bit
24-pin
27C32
EPROM 27C32
27c32 eprom
27C64 EPROM programmer
qe200
programmers 2732
27C128
27C256
27C64
J24AQ
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27C32
Abstract: EPROM 27C32 NMC27C64Q150 Eprom B 2716 D NMC27C64 27128 pin diagram 2732 cmos eprom 8B34 eprom 27C16 nmc27c640
Text: NMC27C64 National ÆÆ Semiconductor NMC27C64 65,536-Bit 8192 x 8 CMOS EPROM General Description Features The NMC27C64 is a 64K UV erasable, electrically repro grammable and one-time programmable (OTP) CMOS EPROM ideally suited for applications where fast turn
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NMC27C64
536-Bit
NMC27C64
NMC27C64Q
28-pin
D7107cÃ
27C32
EPROM 27C32
NMC27C64Q150
Eprom B 2716 D
27128 pin diagram
2732 cmos eprom
8B34
eprom 27C16
nmc27c640
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27C16BQ
Abstract: 27C32 EPROM 27C32 27C16BQ200
Text: NMC27C16B gg National mum Semiconductor NMC27C16B 16,384-Bit 2048 x 8 CMOS EPROM General Description Features The NMC27C16B is a high performance 16K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applications where fast turnaround, pattern exper
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NMC27C16B
NMC27C16B
384-Bit
000A-4000A
27C16BQ
27C32
EPROM 27C32
27C16BQ200
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