27C1 Search Results

Contextual Info: & 27C128 Microchip 128K 16K X 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C128 is a CMOS 128K • • • • — 120ns access tim e available CMOS Technology for low power consumption — 20mA Active current

27C16 EPROM

Abstract: eprom 27C16 27C32 27C16 27c16 uv 27C16Q 27C128 27C256 27C64 C1995
Contextual Info: 27C16 16 384-Bit 2048 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C16 is a high speed 16K UV erasable and electrically reprogrammable CMOS EPROM ideally suited for applications where fast turnaround pattern experimentation and

Contextual Info: 27C128 & Microchip _ 128K 16K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns Maximum access time • CMOS Technology for low power consumption The Microchip Technology Inc 27C 128 is a CMOS 128K bit (electrically) Programmable Read Only Memory. The

MBM27C128-25

Abstract: M5M27C128K-15 M5M27C128K15 27c1028 TI 27C128 uveprom 57C128F-90 57C128F-70 AT27C128-12 i2764 27C128-15
Contextual Info: - 92 - 2 7 C 12 8 m £ £ i u o s i x 4 M » 7 A üb ns) 27C128-12 MICROCHIP —70 120 120 65 50 4. 5 - 5 . 5 20/2 0.8 2.0 6 0. 45/2.1 2.4/0.4 12 27C128-15 MICROCHIP 0—-70 150 150 70 50 4. 5— 5. 5 20/2 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 12 CO TAAC max

27C128

Abstract: 27C128-12 27C128-15 27C128-17 27C128-20 27C128-25
Contextual Info: Obsolete Device 27C128 128K 16K x 8 CMOS EPROM 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 27 8 9 10 11 26 25 24 23 A8 A9 A11 NC OE A10 CE O7 O6 20 19 18 21 17 22 13 16 12 15 A6 A5 A4

Contextual Info: 27C1512T 512Kb 32K x 16-bit OTP EPROM MCM Memory Logic Diagram FEATURES: DESCRIPTION: • 32K x 16 Bit OTP EPROM organization • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 Krad (Si), depending upon space mission

27C1024

Abstract: MIL-M-38535 2C9237 4B942 3B93
Contextual Info: PAGE 1 OF 12 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-27C1024 CMOS EPROM RELIABILITY DATA -125°C OPERATING LIFE TEST -200°C DATA RETENTION BAKE -PROGRAM AND ERASE -125°C OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC) -15 PSIG PRESSURE POT

Contextual Info: 27C128 M ic r o c h ip 128K 16K x 8 CMOS EPROM FEATURES PACKAGE TYPE DIP/SOIC • High speed performance - 120 ns access time available Vpp C A12C 2 A it; 3 A6C 4 A5 C 5 A4 C 6 A3 C 27C128 A2 C 8 A lC 9 AO C 10 • CMOS Technology for low power consumption

27C020

Abstract: 27c256 Ram pinout diagram National Controls ne 545 ve200 27C040 27C080 27C128 27C256 27C512 NM27C128
Contextual Info: tm 27C12Ô 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C128 is a high performance 128K UV Erasable Electri­ cally Program mable Read Only Memory. It is m anufactured with

27S43

Abstract: 82S191B 27S45 WSI Cross Reference 27C49 pRoM 27s49 SS1203 S-57
Contextual Info: I 'M PROM/RPROM CROSS REFERENCE AMD WSI NATIONAL WSI AM 27C49 A M 27C191 A M 27C 291 AM 27PS43 AM 27S43 A M 27S43A AM 27S45 AM 27S49 A M 27 S51 A M 27S51A A M 2 7 S1 9 1 A M 2 7 S2 9 1 W S57C 4 9 B / 4 9 C W S57 C 2 9 1 B W S57 C 2 9 1 B W S57C 4 3B / 43 C

Contextual Info: 27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization 27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(27C1100, ROM pin out compatible)

27C1000 eprom

Abstract: 27C1000 MBM27C1000-20 Fujitsu MBM27C1000 MBM27C1000 27c1000a MBM27C1001-15 MBM27C1000-15 MBM27C1000-25
Contextual Info: FU JITSU CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY EPROM 27C1000-15 27C1000-20 27C1000-25 A p ril 1988 Edition 2.0 CMOS 1,048,576 BIT UV ERASABLE READ ONLY MEMORY (EPROM) T he Fujitsu M BM 27C1000 EPROM Is a high spee d re a d -o n ly s ta tic m e m o ry th a t is

MA2800

Abstract: 27C32 NMC27C32 rd 3153 27C16* block diagram MA2000 27C16 UV-prom MA2732 A0-A15
Contextual Info: PRELIMINARY August 1983 MA2732 8k-Byte CMOS UVPROM/RAM Module General Description Features The MA2732 8k-byte CMOS UVPROM module is a member of the MA2000 series family, it provides a standard m odular m acrocom ponent package and bus interconnect fa c ility for industry-standard 27C16 or 27C32 UVPROMs.

27C010

Abstract: 27C020 27C040 27C080 27C128 27C256 27C512 NM27C128
Contextual Info: 27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C 128 is a high performance 128K UV Erasable Electri­ cally Program mable Read O nly Memory. It is m anufactured with

27C101ZB

Contextual Info: Ms OTP ROMS 1 -M eg O T P R O M s Part Number Configuration Pins / Package Access Time M ax ns Voltage M SM 27C121ZB 128K x 8 32/ DIP, SO P, T S O P 70 5.0 V M SM 27C101ZB 128K x 8 3 2 / D IP , S O P ,T S O P 100 5.0 V M SM 27C131ZB 128K x 8 3 2 / DIP, SOP, T S O P

D4001

Contextual Info: 27C1512T 512Kb 32K x 16-bit OTP EPROM MCM A5 A9 X-Decoder 1024 x 512 Memory Matrix A12 A16 I/O0 Input Data Control I/O7 Y-Gating Y-Decoder CE OE A0-A4 A10-A11 PGM Memory VCC VPP H : High Threshold Inverter H VSS Logic Diagram FEATURES: DESCRIPTION: • 32K x 16 Bit OTP EPROM organization

Contextual Info: M 27C128 ic r o c h ip 128K 16K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120 ns access time available • CMOS Technology for low power consumption —20 mA Active current — 100 nA Standby current • Factory programming available

27C128

Abstract: 27C128-200 eprom 27C128 27C128 eprom transistor C128 27C1 C128 CY27C128 c1281
Contextual Info: fax id: 3011 1CY 27C1 28 27C128 128K 16K x 8-Bit CMOS EPROM Features CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.

Photocell

Abstract: 27c12 Scans-0017376 3 PIN photocell
Contextual Info: EDISWAN 27CI2 PHOTO-CELL TENTATIVE GENERAL The 27C12 is a vacuum Photo-Cell with a caesium-oxygen-silver cathode surface, having maximum sensitivity in the near infra-red region of the spectrum. It is highly sensitive to incandescent light sourccs and may be used for machine control, counting applications,

Contextual Info: S G S -T H O M S O N M 27C1024 1024K 64K x 16 CMOS UV EPROM - OTP ROM VERY FAST ACCESS TIME : 120 ns. COMPATIBLE WITH HIGH SPEED M ICRO­ PROCESSORS, ZERO W AIT STATE. LOW "CMOS'' CONSUMPTION : - Active Current 35 mA - Standby Current 1 mA. PROGRAMMING VOLTAGE 12.75V.

MX27C1100

Contextual Info: Introduction Selection Guide 27C1100/27C1024 1M-BIT 128K x 8/64K x 16 CMOS EPROM FEATURES • 64K x 16 organization(27C1024, JEDEC pin out) • 128K x 8 or 64K x 16 organization(27C1100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/85/100/120/150 ns

27C128 General Semiconductor

Abstract: 27c128
Contextual Info: 27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C128 is a high performance 128K UV Erasable Electri­ cally Program mable Read O nly Memory. It is m anufactured with

mbm27c128

Abstract: CERAMIC LEADLESS CHIP CARRIER LCC 32 socket 27C128-25-X BM TVS M27C128
Contextual Info: FU JITSU CMOS UV ERASABLE 131072-BIT READ ONLY MEMORY TS119-A886 June 1988 CMOS 131072 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C128 is a high speed 131,072 bit static complementary MOS erasable and electrically reprogrammable read only memory EPROM .

Contextual Info: $ M ic r o c h ip 27C128 128K 16K x 8 CMOS EPROM FEATURES PACKAGE TYPES • High speed performance - 120 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 |iA Standby current • Factory programming available