27C64 CMOS Search Results

27c64-25

Contextual Info: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 8192x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 65,5 36 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is

Fujitsu 27C64

Abstract: 27c64-30
Contextual Info: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 81 92 x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is

Contextual Info: & 27C64 M icro ch ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION High speed performance — 120ns maximum access time The Microchip Technology Inc 27C64 is a CMOS 64K bit (electrically) Programm able Read Only Memory. The CMOS Technology for low power consumption

eprom 27c64q200

Abstract: 27C64 ROM 27C64 eprom 27c64 PROGRAMMER CIRCUIT 27C32 27c32 eprom cmos prom 27C64Q200 J28AQ EPROM 27C32
Contextual Info: 27C64 65 536-Bit 8 192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM ideally suited for applications where fast turnaround pattern experimentation and

maxim 27c64

Abstract: DS60011
Contextual Info: & 27C64 M ic r o c h ip 64K 8K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C64 is a CMOS 64K bit — 120ns maximum access time • CMOS Technology for low power consumption ultraviolet light Erasable (electrically) Programmable

27C64

Abstract: eprom 27c64 PROGRAMMER CIRCUIT 200B 27C64-12 27C64-15 27C64-17 27C64-20 27C64-25 27C64 8k EPROM
Contextual Info: 27C64 64K 8K x 8 CMOS EPROM •1 2 3 4 5 6 7 8 9 10 11 12 13 14 27C64 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 27 8 26 27C64 9 25 22 13 21 A8 A9 A11 NC OE A10 CE O7 O6 20 23 12 19 24

27S12

Abstract: 27128 memory nsc600
Contextual Info: 3IE DApril 1989 V 6 - / 3 - Z .J 27C64 65,536-Bit 8,192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 Is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applica­ tions where fast turnaround, pattern experimentation and

Contextual Info: 27C64 & M icrochip 64K 8K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C64 is a CMOS 64K bit (electrically) Programmable Read Only Memory. The device is organized as 8K words by 8 bits (8K bytes). Accessing individual bytes from an address transition or

27C64 8k EPROM

Contextual Info: $ 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGETYPES • High speed performance - 120 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current • Factory programming available

LC 7258

Abstract: 7C266 203CE
Contextual Info: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)

loo8

Contextual Info: & 27C64 Microchip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption —20mA Active current — 10OjiA Standby current • Factory programming available • Auto-insertion-compatible plastic packages

LC 7258

Abstract: AG04
Contextual Info: ^ CY7C266 SEMICONDUCTOR 8K x 8 PROM PowerSwitched and Reprogrammable Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)

27c64 uv eprom

Abstract: 27C64 8k EPROM
Contextual Info: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance —120 ns access time available • CMOS Technology for low power consumption —20 mA Active current —100 jiA Standby current • Factory programming available

Contextual Info: & 27C64 M icro ch ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption — 20mA Active current — 10OnA Standby current • Factory programming available • Auto-insertlon-compatible plastic packages

333Q

Abstract: 27C64 CY7C266 a50tb
Contextual Info: CY7C266 5 f C Y PR ESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Direct replacement for 27C64

Contextual Info: CY7C266 ^ 0 CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TT L -com patible I/O • CMOS for optimum speed/power • D irect replacem ent for 27C64 E PR O M s • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)

intel 27f64

Abstract: 27F64 150V0
Contextual Info: PKEILOIMIDMAIHV in té T 27F64 64K 8K x 8 CHMOS FLASH MEMORY On-Board Program/Erase — New Modes Simplify In-Module Firmware Upgrades 2764A and 27C64 JEDEC Pinout — 28 Pin Cerdip Package Q uick-EraseTM A lg o rith m — Two Second Typical Array Electrical

intel 27c64

Abstract: 87C64 27C640 27C64 27C64 8k EPROM N27C64-1 87C64-20 N27C64 N27C64-20 87C64-25
Contextual Info: intei 27C64/87C64 64K 8K x 8 CHMOS PRODUCTION AND UV ERASABLE PROMS • CHMOS Microcontroller and Microprocessor Compatible -8 7 C 6 4 -in teg ra ted Address Latch — Universal 28 Pin Memory Site, 2-line Control _ ■ Low Power Consumption — 100 fxA Maximum Standby Current

290153

Contextual Info: ir r t e T 64K 8K X 57F64 8 CHMOS FLASH EPROM • Flash-Erase — Two Second Typical Array Electrical Erasure On-Board Program/Erase — New Modes Simplify In-Module Firmware Upgrades ■ High Performance Speeds — 150 ns Maximum Access Time 2764A and 27C64 JEDEC Pinout

Contextual Info: M $ 27C64 ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGE TYPE • High speed performance DIP/SOIC - 120 ns access time available VppQ • 1 28 H Vcc A12C 2 • CMOS Technology for low power consumption 27 JPGM - 20 mA Active current A 7C 3 A 6C 4 26 13 n c

Contextual Info: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGETYPES DIP/SOIC • High speed performance - 120 ns access time available • CMOS Technology for low power consumption - 20 mA Active current Vpp [ I • 1 28 H V c c A12C 2 A7 C 3 27 26 □ NC

27C64-30

Abstract: Fujitsu 27C64-30 i3001 Fujitsu 27C64
Contextual Info: FUJITSU M I C RO ELECT RO NICS S3E D 37^7^5 000=1152 7 C M O S IU V : E R A S A B L F U J IT S U 6 5 5 3 6 -B C E R E A ò nl ^ m em ofm M CMOS 8192X8BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 bit static complementary MOS

27C64MQ25

Abstract: 27C64MQB
Contextual Info: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX_ 27C64 CMOS 65, 536 BIT 8192 x 8 UV ERASABLE PROM MEMORY DESCRIPTION Th e 27C 64 is a h ig h -s p e e d 6 4 K U V e ra s a b le and e le c tric a lly rep ro g ram m a b le EPR O M id e a lly suited

Contextual Info: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGE TYPE DIP/SOIC • High speed performance - 120 ns access time available Vpp C A12C A7C A 6C A 5C A4C •1 2 3 4 5 6 A3C 7 A2Ü B A lC 9 A0 C 10 o o C 11 01C 12 02 £ 13 VesE 14 • C M O S Technology for low power consumption