27N0 Search Results
27N0 Price and Stock
Infineon Technologies AG BSC027N06LS5ATMA1MOSFET N-CH 60V 100A TDSON |
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BSC027N06LS5ATMA1 | Cut Tape | 49,417 | 1 |
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BSC027N06LS5ATMA1 | Reel | 8 Weeks | 5,000 |
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BSC027N06LS5ATMA1 | 17,450 |
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BSC027N06LS5ATMA1 | 10,352 | 1 |
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BSC027N06LS5ATMA1 | Reel | 10,000 | 5,000 |
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BSC027N06LS5ATMA1 | Cut Tape | 807 | 0 Weeks, 1 Days | 1 |
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BSC027N06LS5ATMA1 | 5,000 | 9 Weeks | 5,000 |
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BSC027N06LS5ATMA1 | 5,000 | 1 |
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BSC027N06LS5ATMA1 | 18,339 |
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BSC027N06LS5ATMA1 | 4,750 |
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Rochester Electronics LLC NTB27N06LT4MOSFET N-CH 60V 27A D2PAK |
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NTB27N06LT4 | Bulk | 20,028 | 607 |
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Infineon Technologies AG BSC027N04LSGATMA1MOSFET N-CH 40V 24A/100A TDSON |
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BSC027N04LSGATMA1 | Cut Tape | 17,957 | 1 |
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BSC027N04LSGATMA1 | Reel | 5,000 | 16 Weeks | 5,000 |
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BSC027N04LSGATMA1 | 12,010 |
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BSC027N04LSGATMA1 | Cut Tape | 8,794 | 1 |
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BSC027N04LSGATMA1 | 9,572 |
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BSC027N04LSGATMA1 | 3,752 |
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BSC027N04LSGATMA1 | Cut Tape | 52,430 | 0 Weeks, 1 Days | 1 |
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BSC027N04LSGATMA1 | 17 Weeks | 5,000 |
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BSC027N04LSGATMA1 | 26,955 |
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BSC027N04LSGATMA1 | 158,800 |
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Rochester Electronics LLC MTP27N06LRF MOSFET 100V TO220 |
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MTP27N06L | Bulk | 2,350 | 683 |
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Aces Electronics Co Ltd 59011-0127N-00112P, 2.0MM PITCH WTB WAFER CONN. |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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59011-0127N-001 | Cut Tape | 600 | 1 |
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27N0 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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0N4977
Abstract: 11N6 TL004 10R0 BU2525AX BAV21 TL010 47r0 47RO MPSW01A
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RL040 RL043 DL043 BAV21 TL004 MPSW01A LL001 TL005 MPS750 27N0T 0N4977 11N6 10R0 BU2525AX BAV21 TL010 47r0 47RO MPSW01A | |
Contextual Info: Mallory Sonalert Products Inc. Sales Outline Drawing Part # PSR-27N08S01-JQ Revision B Specifications: Voice Coil Impedance Ω Rated Input (W) Max. Input (W) Lowest Resonance Freq Fo (Hz) Frequency Range (Hz) Output S.P.L. (dB) Magnet Size (mm) Magnet Core Material Mylar |
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PSR-27N08S01-JQ PSR-27s | |
Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY 1WCO ELECTRONICS CORPORATION. 2 AF A PPLIC A TO R C U T -O P F 50 R E V IS IO N S P LTR DESCRIPTION B5 DATE DWN 27N0V07 REVISED PER E C R -0 7 -0 2 7 6 2 3 APVD |
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27N0V07 22MAY03 31MAR2000 22MAY03 | |
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - n 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. _ i_ LOC ALL RIGHT5 RESERVED. G DIST REVISIONS 86 LTR DESCRIPTION DATE REV PER 0G3A— 0 7 2 4 — 02 OWN 27N0V02 APVD JR MS + .0 1 5 -.0 0 5 D 0 .4 0 6 |
OCR Scan |
27N0VÃ B-545 13DE001 13DEC01 31MAR2000 | |
27N0Contextual Info: THI5 OHAWIN0 AND DESIGN HEREON CON S T IT U T E S A P R O P R IE T A R Y D ESIG N O F PACKARD E L E C T R IC D IV IS IO N AND IS NOT TO BE DU PLICA TED OR REPRODUCED WITH OUT AUTHO RITY O F PACKARD E L E C T R IC D IVISIO N . DATE SYM 09AU85 B C 27N085 |
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09AU85 27N085 29JA8G IZ059483 24SE85 08AP85 26SE85 C02D3237 27N0 | |
Contextual Info: THIS DRAWING AND DESIGN HEREON CON ST IT U T E S A PRO PRIETARY DESIGN OF PACKARD E LE C T R IC DIVISION AND IS NOT TO BE D UPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD E LE C T R IC DIVISION. □ATE SYM 27N091 AUTHORITY REVISION RECORD □R CK |
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27N091 12040SS3 120S27S6 120S2800 27N0S1 | |
Contextual Info: 7 DO NOT SCALE 6 5 3 A 2 DATE SYM REVISION RECORD AUTH DR CK 13AU97 El REDRAWN WITH NO PHYSICAL CHANGE 27N097 E2 ADDED 2 .07±0.30 TYP DIM, 1 8 . 0 REF 9 .5 0 H 4 .0 0 -2 23.82 REF WAS 23.82 & PLCS -2 PLCS 1 .0 -2 PLCS 970007 OOD JVS 9 .0 REF 9 .0 REF — 6 .9 |
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13AU97 27N097 -510B 07JL89 | |
SMD plcc2Contextual Info: Temic TEMT3700 Semiconductors Silicon NPN Phototransistor Description TEMT3700 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PL-CC-2 package for sur face mounting on printed boards. Due to its waterclear epoxy lens the device is sensitive to visible and near in |
OCR Scan |
TEMT3700 TEMT3700 TSMS3700 D-74025 27-Nov-97 SMD plcc2 | |
BC138
Abstract: 2N4042 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR 2N3523 BSW12 OC74 transistor bc138 2sc113
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diff40V 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; BC138 2N4042 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR 2N3523 BSW12 OC74 transistor bc138 2sc113 | |
SFT308
Abstract: SFT307 2N2625 2sc113 65T1 PNP GE BSY32 2G302 2G395 2N2209 2SA204
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BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B SFT308 SFT307 2N2625 2sc113 65T1 PNP GE BSY32 2G302 2G395 2N2209 2SA204 | |
2N5735
Abstract: bc507 BSW12 BSY37 2N5736 2N784A 2sc113 BLY11 MM1758 TIS107
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T0106 TE3904 2N914A 2N2272 300M5A 2SC100 10B705 300MA 2N5735 bc507 BSW12 BSY37 2N5736 2N784A 2sc113 BLY11 MM1758 TIS107 | |
2sc113
Abstract: CI44
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OCR Scan |
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BSW12
Abstract: 2n2718 2sc113 CI44 GW 9n BFW74 BFW75 BFW76 BFX53 T046
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BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B BSW12 2n2718 2sc113 CI44 GW 9n BFW74 BFW75 BFW76 BFX53 T046 | |
2sc113
Abstract: STE401 A154 GI3643 ST01 T0106 T018
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OCR Scan |
BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B 2sc113 STE401 A154 GI3643 ST01 T0106 T018 | |
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Contextual Info: w p p jl RAMALL R I 91 . 2 1 2 . 0 5 0 T E C H N IC A L DATA COAXIAL department Issue s 9048 F LANGE SUBCLIC M-BNC F SERIES, ADAPT 50 1 Paae / 1 PEN 90-0130-020 .079 maxi -Th. pan. 4 holes M2.5X0.45 C4 trous M2.5X0.45? MOUNTING HOLE DIAj -H6 (3.7? a A DIA |
OCR Scan |
27-N0V-90 | |
15336008Contextual Info: 24 23 22 21 19 20 17 IB 16 15 14 13 11 12 10 3L 7 8 SYMBOL DEFINITION CD 29.9 A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL ( ) DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M MISSING SYMBOLS TOTAL NO OF INSPECTIONS |
OCR Scan |
27N006 27JN07 13JL07 12AP07 17JL06 18JA07 09SE02 13624515/NONE 365/NONE 3906/N0NE 15336008 | |
Contextual Info: CO N N ECTO R A S S E M B L Y EXAM PLARY DO NOT S C A L E C O N T A C T D I M E N S IO N S L O A D ED z a b c d e f 1 c A A A A A C 2 c A A A A A C 3 c A A A A A C 4 c A A A A A C 5 c A A A A A C 6 c A A A A A C 7 c A A A A A C +0, 2 -8,2 -0 AREA A r A ACTI:ow pffr |
OCR Scan |
A050m EH-0432-95 EH-0905-93 27-N0Y-SS | |
Contextual Info: DO NOT SCALE THTRH ÂNtil P M D IM E N S IO N S IN mm E T R I C PROJECTION g - 0 ,6 e d c b a - 4 x 2 , 0 -8 , 0 SEC TIO N A -A -49,9- W| K l IMI K l K1 IMI K l K1 S U B [g l E l K l K l E l K l K l E l IBI K l K l K l E l K l K B H H B B ISIH H H ISIB ISIB B B H H H B H H H H IiSlI] |
OCR Scan |
-JUL-97 27-N0V-9S | |
ST 9527Contextual Info: DO NOT S C A L E THIRD ANGLE M E T R I C DIMENSIONS IN mm PR O JEC T IO N Œ: I: 10, 4 \ 0,6 -9,612,25- •-4x2, 0-8, 0SEC T I C N A-A ■24, 95■27, 9I lo o o o Ä LcpJ 1/— Nj IHiwi A n l^TzSJ - O _ _ imTM imT^ É] r ^ Ji i^rTSJ l/TM bnp\ FdT! fwl fwl fx |
OCR Scan |
25-4x2, 27-N0V-95 R6-129 ST 9527 | |
Contextual Info: 3 87 5081 G E SOLID 01E STATE Optoelectronic Specifications_ 19816 - HARRIS SEMICOND SECTOR 37E D I D T- '//: / / •43GE571 0027270 T ■ HAS Infrared Emitter CQX14, CQX15, CQX16, CQX17 G alliu m Arsenide In fra re d -E m ittin g Diode |
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43GE571 CQX14, CQX15, CQX16, CQX17 92CS-42662 92CS-429S1 | |
GT280
Abstract: GT150
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13DE00 GT280 GT150 | |
Contextual Info: 3875081 G E SO LID 0 1E STATE D 19656 Optoelectronic Specifications_ H A RR IS S E M I C O N D S E C T O R T 37E D B 4 3 02 27 1 0027116 1 -4 I- I HAS Infrared Emitter LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F " Gallium Arsenide Infrared-Emitting Diode |
OCR Scan |
LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F LED55B-LED55C-LED56 LED55C LED56 | |
7n08
Abstract: 27N0
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OCR Scan |
27N085 I2JN89 27N085 7N085 I8DE85 I9DE85 C02D3267 7n08 27N0 | |
Contextual Info: 27N03S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 2.7 mΩ ID 100 A 1 • Qualified according to JEDEC for target applications |
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BSC027N03S 27N03S |