27SEP2004 Search Results

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 2 1 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST G R E VIS IO N S DAP 14 P LTR DESCRIPTION K REV PER 0G3A—0 7 6 2 —04 DATE DWN APVD 27SEP2004 RF MS D D Q ^ WIRE RANGE

Contextual Info: THIS DRAWING IS UNPUBLISHED. RELEASED BY COPYRIGHT - TYCO ELECTRONICS CORPORATION. FOR PUBLICATION ALL LOC INTERNATIONAL RIGHTS DIST R E V IS IONS RESERVED. DESCRIPTION REVISE A RECOMMENDED PANEL REV PER PER DATE 0A00-0505-04 E C R - I 0-0 I 623 27SEP2004

Contextual Info: 2 THIS D R A WI N G IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL F OR PUBLICATION LOC D I ST AD R|3 H T $ R E S E R V E D . REV ISIONS 00 LTR DE S C R I P T I O N REV PER EC OS I 2 - 02 35 - 0 4 DIMA 27SEP2004 APVD BC -E ss-

IS1651

Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

p5nk100z

Abstract: W15NK100Z F5NK100Z p5nk100 STF5NK100Z STW5NK100Z 22 B2 zener
Contextual Info: STP5NK100Z - STF5NK100Z STW5NK100Z N-CHANNEL 1000V - 2.7Ω - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STF5NK100Z STP5NK100Z STW5NK100Z 1000 V 1000 V

Contextual Info: M68AR024D 16 Mbit 1M x16 1.8V Asynchronous SRAM OBSOLETE PRODUCT FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V I/O SUPPLY VOLTAGE: 1.5 to 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V

m68aw512

Contextual Info: M68AW512M 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 512K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V

Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

M68AR128M

Abstract: TFBGA48
Contextual Info: M68AR128M 2 Mbit 128K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V 128K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.0V

M68AR256M

Abstract: TFBGA48 FBGA 6x8
Contextual Info: M68AR256M 4 Mbit 256K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V 256K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns, 70ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT

AI05

Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Contextual Info: 4 T H IS D R A W IN G S U N P U B L IS H E D . 2 REUEASED FO R AUU C O P Y R IG H T 1963 By P U B U IC A T IO N R IG H TS - .- R E V IS IO N S RESERVED. 50 - LTR D E S C R IP T IO N c D CONTINUOUS STRIP ON REVISED PER DATE E C R - 12 - 0 0 2 8 6 4 22MAY12

Contextual Info: T H IS DRAW ING IS U N P U B L IS H E D . COPYRIGHT RELEA S ED BY TYCO ELECTRONICS CORPORATION. FOR ALL PU B LIC ATIO N RIG HTS - RESERVED. A DIA [. 3 7 5 ] A M P IN C O R P O R A TE D C U S T O M E R S E R V IC E S Y S TE M S FO R A D D IT IO N A L PRODUCT INFORMATION OR

8051 microcontroller in blood pressure monitor

Abstract: MSC1210 MSC1210Y2 MSC1210Y2PAGT TQFP-64 SBAS203 P06l 2508 bp
Contextual Info: MSC1210 SBAS203E − MARCH 2002 − REVISED SEPTEMBER 2004 Precision Analog-to-Digital Converter ADC with 8051 Microcontroller and Flash Memory FEATURES ANALOG FEATURES D 24-BITS NO MISSING CODES D 22-BITS EFFECTIVE RESOLUTION AT 10Hz Low Noise: 75nV D PGA FROM 1 TO 128

Contextual Info: 2 THI S DRAWI NG I S U NP U B L I S HE D. C OP YRI GHT 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S CORPORATI ON. ALL 20 LOC AD R 1GHTS R ES ERVE D. HOUSI NG CONTACT MATERIAL: MATERIAL: REV 1S I O N S DIST 00 P LTR DESCRIPTION

Contextual Info: 2 THIS £ L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC 22 AA RESERVED. <t 8.79 [ .346 ] OF revi DIST LTR s IONS DESCRIPTION HOUSING DATE DWN APVD ECOSI 1 - 0 1 4 7 - 0 3 I 4SEP2004

Contextual Info: M68AR256M 4 Mbit 256K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V 256K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns, 70ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT

P12NM50

Abstract: P12NM50FP B12NM50 STB12NM50 STB12NM50-1 STB12NM50T4 STP12NM50 STP12NM50FP
Contextual Info: STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-CHANNEL 550V @ Tjmax-0.30Ω - 12A TO-220/FP/D²/I²PAK Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP • ■ ■ ■ ■ ■ VDSS @Tjmax 550 V

F5NK100Z

Abstract: STP5NK100Z P5NK100Z STF5NK100Z STW5NK100Z W15NK100Z
Contextual Info: STP5NK100Z - STF5NK100Z STW5NK100Z N-CHANNEL 1000V - 2.7Ω - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STF5NK100Z STP5NK100Z STW5NK100Z 1000 V 1000 V 1000 V < 3.7 Ω

w40n20

Abstract: STP40N20 STW40N20
Contextual Info: STP40N20 STW40N20 N-CHANNEL 200V - 0.038Ω - 40A TO-220/TO-247 LOW GATE CHARGE STripFET MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STP40N20 STW40N20 200 V 200 V < 0.045 Ω < 0.045 Ω 40 A 40 A 160 W 160 W • ■ ■ ■

F40N20

Abstract: STF40N20 STP40N20-STF40N20 W40N20 STB40N20 STP40N20 STW40N20 P40N b40n
Contextual Info: STP40N20-STF40N20 STB40N20 - STW40N20 N-CHANNEL 200V - 0.038Ω - 40A TO-220/FP/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET Table 1: General Features TYPE STP40N20 STW40N20 STB40N20 STF40N20 • ■ ■ ■ ■ ■ VDSS 200 200 200 200 V V V V Figure 1: Package

SLMA004

Abstract: SLMA002 BUF05704 BUF06704 BUF07704 BUF11704 TSSOP-16 TSSOP-20 TSSOP-28 TPA3008D2
Contextual Info: BUF05704, BUF06704 BUF07704, BUF11704 SBOS277D − JUNE 2004 − REVISED SEPTEMBER 2004 18ĆV SUPPLY MULTIĆCHANNEL GAMMA CORRECTION BUFFER FEATURES D Wide Supply Range: 4.5 V to 18 V D Gamma Correction Channels: 10, 6, and 4 D Integrated VCOM Buffer D Excellent Output Current Drive:

b1 185

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2 3 RELEASED FOR PUBLICATION 2003 1.2+0.1 -0.1 1 2003 LOC 30+0.1 -0.1 5 REVISIONS DIST AI ALL RIGHTS RESERVED. - P LTR B B1 1.85 DESCRIPTION DATE DWN APVD ECR-12-002845 13APR2012 MKD RRP ECR-13-010494 08JUL2013 MKD

M29DW323DB

Abstract: M29DW323D M29DW323DT TFBGA48
Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)