P40N Search Results

P40NE

Abstract: p40ne0 p40ne03l p40ne03l-20 P40NE03 STP40NE03L-20 st microelectronics MOSFET automotive
Contextual Info: P40NE03L-20 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V DSS R DS on ID ST P40NE03L-20 30 V <0.020 Ω 40 A • ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE A 100 oC APPLICATION ORIENTED

P40N03

Abstract: p40n03l diode AR s1 47 P40N03L-20 n mosfet depletion pspice model parameters n mosfet pspice parameters depletion p mosfet n channel depletion MOSFET schematic diagram dc converter 72 v to 12 v STP40N03L-20
Contextual Info: P40N03L-20 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID ST P40N03L-20 30 V < 0.02 Ω 40 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

P40NF10

Abstract: JESD97 STP40NF10 p40nf
Contextual Info: P40NF10 N-channel 100V - 0.025Ω - 50A TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID P40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ Application oriented characterization

P50N05

Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
Contextual Info: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2

DC MOTOR CONTROL curcuit

Abstract: res 0207 F-ZTAT MAT-4 TQFP80E Nippon capacitors TOP MARK H4B
Contextual Info: REJ09B0310-0100 16 H8S/2125 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2125 Rev.1.00 Revision Date: Sep. 21, 2006 R4F2125 R4P2125 Rev. 1.00 Sep. 21, 2006 Page ii of xxxviii Keep safety first in your circuit designs!

rbs 6101

Contextual Info: User’s Manual µPD750068 4-bit Single-Chip Microcontrollers µPD750064 µPD750066 µPD750068 µPD75P0076 Document No. U10670EJ2V2UM00 2nd edition Date Published April 2003 N CP (K) c Printed in Japan [MEMO] User’s Manual U10670EJ2V2UM00 NOTES FOR CMOS DEVICES

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT f ¿/PD78011BY, 78012BY, 78013Y, 78014Y 8-BIT SINGLE-CHIP MICROCOMPUTERS DESCRIPTION The ¿¡PD78011BY, ¿¡PD78012BY, ¿¡PD78013Y and ¿¡PD78014Y, ¿¡PD78014Y sub-series products o f the 78K/0 series, su pp ort the l2C bus control fu nctio n. These com puters incorporate various peripherals such as the serial interface

P40NF03L

Abstract: MOROCCO P40NF03L STP40NF03L P40NF03
Contextual Info: P40NF03L N-CHANNEL 30V - 0.018 Ω - 40A TO-220 STripFET POWER MOSFET TYPE P40NF03L • ■ VDSS RDS on ID 30 V < 0.022 Ω 40 A TYPICAL RDS(on) = 0.018 Ω @ 10 V LOW THRESHOLD DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"

IC-3173

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿iPD78001 BY, 78002BY 8-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The ¿¡PD78001BY/78002BY are th e p ro d u c ts in th e ¿¡PD78002Y su b s e rie s w ith in 78K/0 series. The ¿¡PD78001BY/78002BY have tim e r, serial in te rfa ce l2C bus m o d e c o m p a tib ility , in te rru p t fu n c tio n s and m any

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon Power lan iransistors High Voltage Video Output Transistor D40N The D40N is a silicone plastic encapsulated power transistor for TV video

Contextual Info: 7KLVSDJHLQWHQWLRQDOO\OHIWEODQN Nexus 1262/1272 Meter Installation and Operation Manual Version 1.15 Published by: Electro Industries/GaugeTech 1800 Shames Drive Westbury, NY 11590 All rights reserved. No part of this publication may be reproduced or transmitted in

p40nf10

Contextual Info: P40NF10 N-channel 100V - 0.025Ω - 50A TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID P40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ Application oriented characterization

P40NF12

Abstract: STP40NF12 p40nf
Contextual Info: P40NF12 N-channel 120V - 0.028Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID P40NF12 120V <0.032Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

P40NF03

Abstract: P40NF03L p40nf0 STP40NF03L TRANSISTOR mosfet 30V 40A MOROCCO P40NF03L ST MARKING p40nf
Contextual Info: P40NF03L N-channel 30V - 0.018Ω - 40A - TO-220 STripFET Power MOSFET General features • Type VDSS RDS on ID P40NF03L 30V <0.022Ω 40A Low threshold device Description 3 1 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"

UPD78F9202

Abstract: CMP-01 PD78F9211GR UPD78F9212GRT
Contextual Info: Preliminary User’s Manual 78K0S/KU1+, 78K0S/KY1+ 8-Bit Single-Chip Microcontrollers µPD78F9200 µPD78F9201 µPD78F9202 µPD78F9210 µPD78F9211 µPD78F9212 Document No. U16994EJ2V0UD00 2nd edition Date Published February 2005 NS CP(K) Printed in Japan

P40NF03

Abstract: P40NF03L F40NF03L p40nf 70125 STP40NF03L 7025W 2816A
Contextual Info: STF40NF03L P40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features • Type VDSS RDS on max ID STF40NF03L 30 V 0.022 Ω 23 A P40NF03L 30 V 0.022 Ω 40 A Low threshold device Application ■ 3 3 1 TO-220 2 1 2 TO-220FP

W65C134DB

Abstract: W65C134DB Developer Board xc9572pc84 XC9572-PC84 27C256 W65C02S W65C22S CPLD PLD51
Contextual Info: THE WESTERN DESIGN CENTER, INC. 2166 E. Brown Rd. Mesa, AZ 85213 Ph 480-962-4545 Fx 480-835-6442 www.westerndesigncenter.com Data Sheet W65C134DB Developer Board Copyright  2001 by The Western Design Center, Inc. All Rights Reserved Worldwide Table Of Contents

P40NF03L

Abstract: P40NF03 PTC C970 STP40NF03L JESD97 21FEB2007 p40nf P40N
Contextual Info: P40NF03L N-channel 30V - 0.018Ω - 40A - TO-220 STripFET Power MOSFET General features • Type VDSS RDS on ID P40NF03L 30V <0.022Ω 40A Low threshold device Description 3 1 This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature

P41N

Abstract: uPD753036 uPD75P3036 uPD75P3036GC uPD75P3036GC-3B9 uPD75P3036GC-3B9-A uPD75P3036GK-BE9 uPD75P3036KK-T C10943X 75P3036
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD75P3036 4-BIT SINGLE-CHIP MICROCONTROLLER The µPD75P3036 replaces the µPD753036’s internal mask ROM with a one-time PROM or EPROM. Because the µPD75P3036 supports programming by users, it is suitable for use in prototype testing for system

p60nf06

Abstract: P90NF03 P60NF p60nf06l p90nf03l p80nf75 P80NF5 p60nf0 P90NF p40nf10
Contextual Info: AN1624 APPLICATION NOTE STSR3 SIMPLIFIES IMPLEMENTATION OF SYNCHRONOUS RECTIFIER IN FLYBACK CONVERTER F. Librizzi - F. Lentini 1. ABSTRACT This paper describes the functionality and the operation of the STSR3 device used as the secondary synchronous rectifier driver in Flyback topology switched mode power supplies. A Schematic and layout

uPD75P3018A

Abstract: uPD75P3018AGC-3B9 uPD75P3018AGC-8BT uPD753012A uPD753017 uPD753017A uPD75P3018 uPD75P3018AGK-9EU uPD75P3018AGK-BE9 75P3018AGC-8BT
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD75P3018A 4-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The µPD75P3018A replaces the µPD753017A’s internal mask ROM with a one-time PROM, and features expanded ROM capacity. The µPD75P3018A inherits the function of the µPD75P3018, and enables high-speed operation at

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 4-BIT SINGLE-CHIP MICROCONTROLLER The ¿¡PD75P3018A replaces the ,uPD753017A’s internal mask ROM with a one-time PROM, and features expanded ROM capacity. The ¿¡PD75P3018A inherits the function of the ¿¡PD75P3018, and enables high-speed operation at

uPD75P3018AGC-8BT-A

Abstract: uPD753012A uPD753017 uPD753017A uPD75P3018 uPD75P3018A uPD75P3018AGC-3B9 uPD75P3018AGC-3B9-A uPD75P3018AGC-8BT lfh 1001
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

IC ax 2008 circuit diagram

Abstract: ic cir 2272 H8S/300 pec 730 1. Mobile Computing block diagram 8086 convertion from decimal to binary program ABI Electronics addressing modes 8086 FC59 FLSR 25 ID indicator
Contextual Info: REJ09B0462-0100 16 H8S/2112R Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2112R R4F2112R All information contained in this material, including products and product specifications at the time of publication of this material, is subject to change by