2856K Search Results

bpw 104

Abstract: a850
Contextual Info: BPW 34S E9087 SIEMENS FEATURES • Especially suitable tor applicatons from 400 nm toitOOnm • Short switching time (typ. 20 ns) • Suitable for vapor-phase and IR-reflow soldering • Reverse guilwing Characteristics Ta =25°C, standard light A, T=2856k

Contextual Info: Stick-Type Light Meters ߜ Accuracy: ±3% + 10 digits CIE @ 2856k (A ߜ Portability and Simplicity– One-Hand Operation ߜ Accurate Visible Compensation Filter f؅1 is Used ߜ Measurment Rate 2.5/sec ߜ Range: From 20 to 200000 Lux ߜ Selective Lux and

Contextual Info: Stick-Type Light Meters ߜ Accuracy: ±3% + 10 digits CIE @ 2856k (A ߜ Portability and Simplicity– One-Hand Operation ߜ Accurate Visible Compensation Filter f؅1 is Used ߜ Measurment Rate 2.5/sec ߜ Range: From 20 to 200000 Lux ߜ Selective Lux and

IC vertical lg

Abstract: MW3736CKH
Contextual Info: CCD Area Image Sensor MW3736CKH 11mm 2/3 inch 768H CCD Area Image Sensor • Overview ■ Pin Assignments The MW3736CKH is a 11mm (2/3 inch) Interline Transfer CCD (ITCCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section

Contextual Info: SIEMENS C M P N T S t OPTO M4E D • Ô53b32h QGQS5S1 H « S I E X SIEM ENS BPX38 SERÍES PHOTOTRANSISTOR T -4 1 -6 1 Package Dimensions in Inches mm .113128} Maximum Ratings Operating and Storage Temperature T „ J . -55*C to +125”C

pn268

Contextual Info: Panasonic Darlington Phototransistors PN268- NC Darlington Phototransistor For optical control systems • Features • D a rlin g to n output, high sensitivity • E asy to co m b in e w ith red and in frared lig h t em ittin g diodes • 0 3 p lastic pack ag e

PN303

Contextual Info: Panasonic PIN Photodiodes PN303 PIN Photodiode For optical control systems • Features • Fast response which is well suited to high speed m odulated light detection : tr, tf = 50 ns typ. • High photodetection sensitivity and wide dynamic responsivity

PANASONIC MA

Abstract: 2856K PN107 PN108
Contextual Info: Panasonic Phototransistors PN107, PN108 Silicon NPN Phototransistors For optical control system s • F eatures • High sensitivity : I C e l = 5 mA (min.) (at L = 100 lx) • N arrow directional sensitivity for effective use o f light input • Fast response : tr = 5 (_ls (typ.)

PN127

Contextual Info: Panasonic Phototransistors PN127 Silicon NPN Phototransistor U n it: mm For optical control systems Type number : Emitter mark Blue • Features • High sensitivity • G ood collector photo current linearity with respect to optical pow er input • Fast response : tr = 2.5 |^s (typ.)

100S

Abstract: PN106 KS2500
Contextual Info: Panasonic Phototransistors PN106 Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity • F a st resp o n se : tr = 3.5 |^s typ. • N arro w directional sensitivity fo r effective use o f lig h t input • S ignal m ixing c ap ab ility using ba se pin

PN101

Contextual Info: Panasonic Phototransistors PN101 Silicon NPN Phototransistor For optical control systems • Features • High sensitivity • W ide spectral responsivity, suited for detecting GaAs L E D ’s • Low dark current : I C e o = 5 nA typ. • Fast response : tr, tf = 3 |xs (typ.)

LIGHT POSITION CONTROL

Abstract: PNA3201F
Contextual Info: Panasonic PIN Photodiodes PNA3201F PIN Photodiode For optical control systems • Features • High sensitivity and low dark current • For one-dim ensional light-point position detection • G ood positional linearity • Small plastic package I Absolute Maximum Ratings Ta = 25°C

LT 5242

Abstract: LT 5242 H
Contextual Info: F2Z L U — + f — ^ ^ 5242 L 0 fi 0000127 S • 2 SE D KODENSHI CORP "f^ l-fT -S 7 -0 5 - LA S E R D E T E C T O R S a g » K ii« f lt e HPI-2263 iv h y - f t f — 3 > P IN ff2 7 * K T 'T o DIMENSIONS 2 '3 O T * j t B A < l ^ - y y ± C » d l S * l T l '*

Contextual Info: KODENSHI CORP ’ 25E D HPI-23F Sn • T '- Lj-}-i 3 5242L0a G D Q O i n b ■ ftW * DIMENSIONS (Unit: mm) <n'> i; n > p m $ 7 * * ? ■ < * - KT'-fo m k n m x - m m ^ ^ •c to The HPI-23F is a high-speed, high-output silicon PIN photodiode mounted in a clear sideiooking package. The

DIODE RK 306

Abstract: tr/DIODE RK 306
Contextual Info: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.

B14-38

Abstract: JEDEC B14-38 DY10 R877 R877-01 10-STAGE PIN BASE B14-38 lm 565 pin diagram
Contextual Info: PHOTOMULTlPLlER TUBES R877, R877-01 For Scintillation Counting, 127mm 5 Inch Diameter Bialkali Photocathode, 10-Stage, Head-On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode MateriaI Minimum Effective Area R877

E678-12L

Abstract: R1878 DY10 Hamamatsu Photomultiplier Socket 12 Pin
Contextual Info: PHOTOMULTIPLIER TUBE R1878 For Photon Counting Applications Excellent Transit Time Spread, Low After Pulse 19mm 3/4 Inch Diameter, Multialkali Photocathode, 10-Stage, Head-on Type GENERAL Parameter Spectral Response Wavelength of Maximum Response Material

HAMAMATSU E849

Abstract: e849-35 E849-34 e849 Hamamatsu Photomultiplier Socket 12 Pin E678-13A pmt divider circuit windmill design R1463 R1463P
Contextual Info: PHOTOMULTIPLIER TUBES R1463, R1463P High Anode Sensitivity at Low Supply Voltage, 13mm 1/2 Inch Diameter, 10 Stage, Head-On Type, Multialkali Photocathode, (185nm to 850nm) The Hamamatsu R1463 is a 13mm (1/2") diameter, head-on type photomultiplier tube having a multialkali photocathode designed for

PNA2083M

Abstract: PNA2803M
Contextual Info: Darlington Phototransistors PNA2803M Darlington Phototransistor Unit : mm For optical control systems 5.0±0.2 0.6 Features Not soldered 2.0 max. ø3.8±0.2 ø3.0±0.2 Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes

DY11

Abstract: B20-102 ic lm 741 ch E678-20A ic 741 datasheet R3235 R3234-01 R3235-01 Hamamatsu Photomultiplier Socket 12 Pin
Contextual Info: HIGH–SPEED PHOTON COUNTING PHOTOMULTIPLIER TUBES R3234–01, R3235–01 High–speed Photon Counting and Fluorescence Measurement 51mm 2 Inch Diameter, 12–stage, Head–on Type R3234–01:Borosilicate Window (300 to 650nm) R3235–01:Synthetic Silica Window (160 to 650nm)

E678-21A

Abstract: photomultiplier R331-05 IC-1920 IC Tubes R331 Corning 5-58
Contextual Info: PHOTOMULTIPLIER TUBES R331, R331-05 For Liquid Scintillation Counting Bialkali Photocathode, 51mm 2 Inch Diameter, 12 Stages, Head-On Type The R331 and the R331-05 are 51mm (2 Inch) diameter series photomultiplier tubes specifically developed for the liquid scintillation counting. They feature low background noise, high tritium efficiency, good

E678-14T

Abstract: E2624 R7056 photomultiplier tube Hamamatsu Photomultiplier Socket 14 Pin R7056 pmt E2624 SHV CONNECTOR r642 RG-174 bnc E678-14C
Contextual Info: PHOTOMULTIPLIER TUBES R6427, R7056 Fast time response, For scintillation counting and high energy physics, R6427: Borosilicate glass, R7056: UV glass GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Effective Area

R580

Abstract: DY10 TPMHB0204EA
Contextual Info: PHOTOMULTlPLlER TUBE R580 For Scintillation Counting and High Energy Physics 38mm 1-1/2 lnch Diameter, 10–stage, Bialkali Photocathode, Head–On Type GENERAL Description/Value 300 to 650 420 Bialkali 34 Borosilicate glass Linear focused 10 3 7 JEDEC No.B12–43

R758

Abstract: R636 R636-10 TPMSA0027EC R758-10
Contextual Info: PHOTOMULTlPLlER TUBES R636–10, R758–10 UV to Near IR R636–10:185 to 930 nm, R758–10:160 to 930nm Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response