28AUG07 Search Results

tyco 350218-1

Abstract: CTLB084620-003
Contextual Info: 110-213 Qualification Test Report 28Aug07 Rev A All Paragraphs Revised Universal MATE-N-LOK* Connector 1. INTRODUCTION 1.1. Purpose Testing was performed on Universal MATE-N-LOK* connectors to determine their conformance to the requirements of Product Specification 108-1031 Revision J.

Contextual Info: Not recommended for new designs, use VS-FA72SA50LC VS-FA57SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 57 A FEATURES • • • • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating

Contextual Info: Not Available for New Designs, Use VS-UFB130FA60 UFB120FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape

Contextual Info: UFB120FA40P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

Contextual Info: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance

VS-GB75DA120UP

Contextual Info: Not recommended for new designs, use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy

VS-GB100DA60UP

Contextual Info: VS-GB100DA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft

Contextual Info: Not Available for New Designs, Use VS-HFA90FA120 HFA80FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 80 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal

Contextual Info: Not Available for New Designs, Use VS-UFB230FA60 UFB200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape

Contextual Info: HFA120FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 120 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly

Contextual Info: Not Available for New Designs, Use VS-UFB80FA40 UFB60FA40P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape

Contextual Info: Not recommended for new designs, use VS-FA40SA50LC VS-FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated

Contextual Info: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available

Contextual Info: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package

Contextual Info: HFA60FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 60 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly

application notes igbt induction heating

Abstract: VS-GA100NA60UP
Contextual Info: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

UFB200FA

Contextual Info: UFB200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

ufb200fa20p

Abstract: UFB200FA
Contextual Info: UFB200FA20P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 240 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

Contextual Info: FC40SA50FKP Vishay Semiconductors Power MOSFET, 40 A FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current SOT-227

GB100DA60UP

Contextual Info: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery

Contextual Info: UFB60FA20P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

FB180SA10P

Contextual Info: FB180SA10P Vishay Semiconductors Power MOSFET, 180 A FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance

1114A

Abstract: GB50LA120UX
Contextual Info: GB50LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Ultrafast IGBT , 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse