28F002T Search Results

Contextual Info: MXIC M X 28F002T/B 2 M - B I T J 2 5 6 K x 8 C M O S FLA SH M E M O R Y FEATURES 262,144x8 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100jiAmaximum standby current Programming and erasing voltage 12V ± 5%

28f800b5

Abstract: 28F002BC 28F008 28F200B5 28F800 AB-60 ab-65 28f400
Contextual Info: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview December 1996 Order Number: 292154-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

28F002-T

Abstract: 3A00 28F002T MX28F002 MX28F002-B MX28F002-T
Contextual Info: Introduction Selection Guide 28F002T/B 2M-BIT[256K x 8] CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current • Programming and erasing voltage 12V ± 5%

28f400 BYTE PROGRAM

Abstract: 28F800T transistor CC 11 A 28F008SA 28F400 28F800 AB-60 intel DOC 1024Kx8 intel 28F400
Contextual Info: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview COLLIN K. ONG TECHNICAL MARKETING ENGINEER September 1995 Order Number: 292154-002 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including

Contextual Info: 28F002T/B 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES – Auto Erase with Erase Suspend capability • Status Register feature for Device status detection • Absolute Hardware-Protection for Boot Sector • Auto Erase sector and Auto Program – Status Registers

fujitsu 29LV160B

Abstract: 29F800B 29LV160B 29F160B m29f800bb
Contextual Info: JTAG-Booster for AMD ÉlanSC520 P.O. Box 1103 Kueferstrasse 8 +49 (7667 908-0 sales@fsforth.de l l l l D-79200 Breisach, Germany D-79206 Breisach, Germany Fax +49 (7667) 908-200 http://www.fsforth.de JTAG-Booster for AMD ÉlanSC520 Copyright  1995.2002:

Contextual Info: ir r ig l PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — Increased Programming Throughput

Contextual Info: irrigl, PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — Increased Programming Throughput

MT28F002

Abstract: SR50
Contextual Info: PRELIMINARY MICRON 1 MT28F002 256K x 8 FLASH MEMORY -• - 256K x 8 I FLASH MEMORY FEATURES • Five erase blocks: 16K B bo o t b lo ck protected T w o 8K B p a ra m eter b lo ck s T w o m ain m em o ry b locks • 5V ±10% V c c; 12V ±5% V pp • A d d ress access tim es: 60n s, 80ns, 100ns

Contextual Info: P I H i@ y T 1F [ ^ 1 ¥ D 0 in te l 2-MBIT 128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at

Contextual Info: MXIC 28F002T/ B 2 M -BIT[2 5 6 K X 8 ] CMOS FLASH MEMORY FEATURES 262,144 bytes by 8-bit organization Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 10OnAmaximum standby current Programming and erasing voltage 12V ± 5%

intel 28F200

Abstract: 56-Lead TSOP Package E28F200CVB60 e28f200cv-b60 29053 TB28F200BVT80
Contextual Info: E PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B Intel SmartVoltage Technology  5V or 12V Program/Erase  3.3V or 5V Read Operation  Increased Programming Throughput at 12V VPP

LEAPER-3

Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
Contextual Info: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.

Contextual Info: iir tls J W W C T [p ^l¥0i 2-MBIT (128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at

28F002-T

Contextual Info: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package

Contextual Info: 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B m Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 3.3 V or 5 V Read Operation • Very High-Performance Read — 5 V: 60 ns Access Time — 3 V: 110 ns Access Time

Contextual Info: iny» AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview September 1995 I Order Number: 292154-002 2-17 AB-60 1.0 INTRODUCTION T h is document includes a feature overview , pinouts, and m em ory maps fo r Intel’ s Sm artVoltage boot b lo ck

Contextual Info: E PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B n n n n n n n n n Intel SmartVoltage Technology  5V or 12V Program/Erase  3.3V or 5V Read Operation  Increased Programming Throughput

MX-1610

Abstract: intel 28f200 db86082 mx1610 intel 80586 MX28F002 MXIC flash disk controller db86082b MX26C1000A KM29N32000
Contextual Info: APPLICATION NOTES 1. TYPICAL NONVOLATILE MEMORY APPLICATION 2.) ON-BOARD PROGRAMMING DESIGN CONSIDERATIONS FOR THE MX26C512A 3.) ON-BOARD PROGRAMMING OF THE MX26C1000A 4.) IN-CIRCUIT PROGRAMMING OF THE MX26C1024A 5.) 2M FLASH MEMORY 6.) 8M FLASH MEMORY 7.) MX25L4004A 4M-BIT 4MX1) CMOS SERIAL FLASH MEMORY

29lv640

Abstract: HC-36/29lv640
Contextual Info: JTAG-Booster for IDT RC64145 FORTH-SYSTEME GmbH P.O. Box 11 03 Kueferstrasse 8 l D-79200 Breisach, Germany l D-79206 Breisach, Germany +49 (7667 908-0 l Fax +49 (7667) 908-200 l e-mail: sales@fsforth.de JTAG-Booster for IDT 64145 Copyright  1995.2000:

DB25-Connector

Abstract: I28F008 29lv004b 29LV008B AMD29LV400B i28F016 AM29LV400BW I28F200 amd 29F010 flash memory 29F800T jtag
Contextual Info: Description of JTAG-Booster for AMD ÉlanSC400 Description of JTAG-Booster for AMD ÉlanSC400 Program Version 2.2 Dieter Fögele JTAGEL4.DOC 1 Description of JTAG-Booster for AMD ÉlanSC400 Copyright  1997: FS FORTH-SYSTEME GmbH Postfach 1103, D-79200 Breisach, Germany

intel 28F400

Contextual Info: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B n n n n n n n Intel SmartVoltage Technology  5 V or 12 V Program/Erase  3.3 V or 5 V Read Operation Very High-Performance Read