28F102 Search Results

m5M28F102

Abstract: COMMAND40 UNICOM Electric 28F102P
Contextual Info: MITSUBISHI LSIs M5#tô8F102P,FP,J,VP,RV- 10,- 12,- 15 V*vi 048576- BIT 65536- WORD BY 16-BIT CM0S FLASH MEMORY -DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M itsubishi M 5M 28F102P, FP, J, VP, RV are high-speed 1 0 4 8 5 7 6 -b it CMOS Flash Memories. They are suitable for

Contextual Info: MITSUBISHI LSIs M 5M 28F 102A F P , J , V P , R V * - 85,-10 1048576-BIT 65536-WORD BY 16-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI M 5M 28F102A is high-speed 1048576-bit CMOS Flash Memory. This is suitable for the applications with m icro­ processor or m icro-controller w here on-board reprogram m ing is

Contextual Info: 28F102 L icen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 55/70/90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

Contextual Info: 28F102 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels –Standby: 1 mA max (TTL levels)

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: 5 28F102 Ï. 1 Mbit 64Kb x16, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 1O^is typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Stand-by Current: 5 ^A typical 10,000 ERASE/PROGRAM CYCLES

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

28f102

Abstract: xx40h
Contextual Info: Main Menu 28F102 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels

CAT28F102

Contextual Info: C lA CAT2 8 F102 T A 1 _ Y s ~r Licen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tandby: 1 mA max (TTL levels)

Contextual Info: CAT2 8 F102 Licen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tandby: 1 mA max (TTL levels)

28F102

Abstract: xx40h 28F101 CAT28F102
Contextual Info: 28F102 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels –Standby: 1 mA max (TTL levels)

2SF102

Abstract: 2sf1
Contextual Info: Hill CRTRLYST • ■ If / S E M I C O N D U C T O R Preliminary C A T 28F 102 1 Megabit CMOS Flash Memory FEATURES ■ Fast Read Access Time: 90/120/150 ns 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

Contextual Info: L icen sed In tel second so u rce C A T 2 8 F 1 0 2 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

Contextual Info: S G S -T H O M S O N D M a iC T G S tM O ! M 2 8 F 1 0 2 1 Megabit 64K x 16, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 1OOpA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10[is

28f102

Abstract: CAT28F102
Contextual Info: C lA CAT2 8 F102 T A 1 _ Y s ~r Licen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tandby: 1 mA max (TTL levels)

CAT28F102

Abstract: xx40h
Contextual Info: L_VST 28F102 L icen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 55/70/90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -S tandby: 1 mA max (TTL levels)

2SF101

Abstract: 28f102 28F101-3 CAT28F102 xx40h
Contextual Info: IlfflC R T R Ü T S T Preliminary m a m i I S E M I C O N D U C T O R 28F102 1 Megabit CMOS Flash Memory FEATURES Fast Read Access Time: 90/120/150 ns 64K x 16 Word Organization Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

Contextual Info: MITSUBISHI LSIs M5M&8F102P,FP, J,VP,RV- 1 0 ,-1 2 ,-1 5 ^\,>iQ48576-BIT 65536-WORD BY 16-BIT CM0S FLASH MEMORY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M itsubishi M 5M 28F 102P , FP, J, VP, RV are high-speed 1 0 4 8 5 7 6 -bit CMOS Flash Memories. They are suitable fo r

m5m28f102j

Contextual Info: PRELIMINARY M5 28F102P,FP,J,VP,RV-10,S-U12S-i 5S'S 1048576-BIT 65536-WORD B Y 16-BIT C M O S F L A S H M EM Q R V DESCRIPTION PIN CONFIGURATION (TOP VIEW The M itsubishi M 5 M 2 8 F 1 0 2 P ,F P J,V P JIV are high-speed

a14ct

Abstract: 28f102 M28F102 A10CZ
Contextual Info: SGS-THOMSON 28F102 1 Mb 64K x 16, Bulk Erase FLASH MEMORY DATA B RIEFING • ■ ■ • ■ « • ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10^s typical ELECTRICAL CHIP ERASE In 1s RANGE

Contextual Info: /= # ^7# S G S -T H O M S O N ^□ ^®iLi©lT[E©K50 gi 28F102 CMOS 1 Megabit (64K x 16, Chip Erase FLASH MEMORY ADVANCE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100liA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

Contextual Info: ^24^025 0024517 Oli MITSUBISHI LSIs r " M 5 M ¿ 8 F 1 0 2 P ,F P ,J ,V P ,R V - 1 0 ,- 1 2 ,- 1 5 ÿ V M 048576-BlT 65536-WORD BY 16-BIT CM0S FLASH MEMORY DESCRIPTION The Mitsubishi 28F102P. FP. J, VP, RV are high-speed 1048576-b it CMOS Flash Memories. They are suitable for

27C4002

Abstract: 27C1024 27HC1024 28f210 27c516 27C2048 27C220 27C4096 Hitachi j-16 27C210l
Contextual Info: AD44/60 file:///AD44.HTM t I P pro duc t d a ta sh eet AD44 and AD60 Package Converters for Word Wide EPROMs PLCC jProduct Code Pins on skt Pins on Base ¡Wiring Code Package Base pitch" Miscellaneous I P ~ j ~ ~7<T " ClamsheÎl ^ AD44 : 44 ~: 40 j~ ~ .08