28F5L Search Results

Contextual Info: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase

Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time

Contextual Info: a PRELIM INARY Am28F512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns maximum access lime ■ CMOS low power consum ption

Contextual Info: n Preliminary Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ Low power consumption ■ Flasherase Electrical Bulk Chlp-Erase - One second typical chip-erase

AMD am3 socket pinout

Abstract: amd am3 pin out AM28F512
Contextual Info: ADV MI CR O MEM OR Y 4fiE D 02S7SEÖ Preliminary DG30bäS 5 « A M D 4 T—46—13—27 Advanced Micro Devices A m 2 8 F 5 1 2 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time • Low power consumption

28FS12

Contextual Info: a Am28F512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 pA maximum standby current