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    CEM8912

    Contextual Info: March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 7 A , Rds on =28iti Q @ Vgs=1 0V. R ds (o n )=45 iti Q Di @ Vgs=4.5V. Di D2 D2 • Super high dense cell design for extremely low R ds(on>. • High power and current handing capability.


    OCR Scan     		CEM8912 28iti 45i7iQ CEM8912 PDF

    es10 diode

    Abstract: 8a 817 voltage CET453N
    Contextual Info: CET453N M arch 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 8 A , R ds on =28itiî2 RDS(ON)=42mQ @ V gs =1 0V. @ V gs =4.5V. • High dense cell design fo r lo w R ds (on ). • Rugged and reliable. • SOT-223 Package. G SOT-223


    OCR Scan     		CET453N 42mfl OT-223 sot-223 es10 diode 8a 817 voltage CET453N PDF