28N12 Search Results
28N12 Price and Stock
Micro Commercial Components SICW028N120A4-BPMOSFET N-CH 1200 V 80A TO247-4 |
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SICW028N120A4-BP | Tube | 1,736 | 1 |
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SICW028N120A4-BP | 350 |
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Orient Display Ltd AFL240320A0-2.8N12NTM-ANOGRAPHIC DISPLAY TFT RGB 2.8" |
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AFL240320A0-2.8N12NTM-ANO | Box | 11 | 1 |
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Amphenol Aerospace QWLD05R28N12PRECEPT |
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QWLD05R28N12P | Bulk | 2 |
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QWLD05R28N12P | Bulk | 1 |
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QWLD05R28N12P |
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Amphenol Aerospace MS17344R28N12PPLUG |
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MS17344R28N12P | Bulk | 2 |
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MS17344R28N12P | Bulk | 1 |
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MS17344R28N12P |
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Amphenol Aerospace MS17348C28N12PRECEPT |
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MS17348C28N12P | Bulk | 2 |
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MS17348C28N12P | Bulk | 1 |
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MS17348C28N12P |
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28N12 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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igbt induction cooker
Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B
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28N120B IC110 O-268 O-247 728B1 123B1 728B1 065B1 28N120B igbt induction cooker induction cooker application notes siemens igbt IXGH 28N120B | |
IXGQ28N120B
Abstract: 28N120 induction cooker application notes IXGQ28N120BD1
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28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1 IXGQ28N120B 28N120 induction cooker application notes IXGQ28N120BD1 | |
igbt induction cookerContextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 |
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28N120BD1 IC110 O-268 0-12A/DSEC 0-12A igbt induction cooker | |
IXGH 28N120BD1Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM |
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28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) 405B2 IXGH 28N120BD1 | |
28N120Contextual Info: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 |
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28N120B IC110 O-268 O-247 28N120 | |
Contextual Info: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 |
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28N120B IC110 O-268 O-247 | |
IXGH 28N120BD1Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 |
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28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH 28N120BD1 | |
Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous |
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28N120B 28N120BD1 IC110 065B1 728B1 123B1 728B1 | |
Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM |
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28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) | |
28N120
Abstract: igbt induction cooker Siemens induction cooker IXGP28N120B igbt for induction heating ic induction cooker induction cooker application notes induction heating ic 28N12 C27056
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28N120B IC110 O-220 28N120B 28N120 igbt induction cooker Siemens induction cooker IXGP28N120B igbt for induction heating ic induction cooker induction cooker application notes induction heating ic 28N12 C27056 | |
IXGH 28N120BD1
Abstract: igbt induction cooker 28N120
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28N120BD1 IXGH 28N120BD1 igbt induction cooker 28N120 | |
Contextual Info: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM |
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28N120B IC110 O-268 O-247 728B1 123B1 065B1 | |
28N120B
Abstract: RG201
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28N120B O-268 O-247 728B1 123B1 065B1 RG201 | |
27G11
Abstract: ZCT21P16 21G11 XCK_ 28n12 XCK P XE2N P3151 25P16 Osiconcept P3151
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P3161) P3131) P3141) P3151) 25N12 27N12 28N12 26N12 21N12 27G11 ZCT21P16 21G11 XCK_ 28n12 XCK P XE2N P3151 25P16 Osiconcept P3151 | |
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