2907 TRANSISTOR PNP
Abstract: 2907 2907 pnp 2907 pnp transistor
Text: PNP Silicon Switching Transistor SXT 2907 A High current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings
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Q68000-A8300
OT-89
2907 TRANSISTOR PNP
2907
2907 pnp
2907 pnp transistor
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G S-LMBT2907LT1G S-LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40
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LMBT2907LT1G
LMBT2907ALT1G
S-LMBT2907LT1G
S-LMBT2907ALT1G
Alumin2907LT1G
OT-23
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LMBT2907ALT1G
Abstract: LMBT2907LT1G 1N916 LMBT2907
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G • We declare that the material of product compliance with RoHS requirements. 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40 –60 V CEO Collector–Base Voltage
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LMBT2907LT1G
LMBT2907ALT1G
LMBT2907LT1G
OT-23
LMBT2907ALT1G
1N916
LMBT2907
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2907 TRANSISTOR PNP
Abstract: MMBT2907 MMBT2907 ON 1N916 MMBT2907A MMBT2907ALT1 MMBT2907LT1 2907a TRANSISTOR PNP MMBT2907A MMBT2907
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR MMBT2907LT1 MMBT2907ALT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value 2907 2907A V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage V EBO –5.0 Vdc –600
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MMBT2907LT1
MMBT2907ALT1
236AB)
2907 TRANSISTOR PNP
MMBT2907
MMBT2907 ON
1N916
MMBT2907A
MMBT2907ALT1
MMBT2907LT1
2907a TRANSISTOR PNP
MMBT2907A MMBT2907
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2907 TRANSISTOR PNP
Abstract: 1N916 LMBT2907 LMBT2907ALT1 LMBT2907ALT1G LMBT2907LT1 LMBT2907LT1G Lo8.3 LO81
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1 LMBT2907ALT1 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A Collector–Emitter Voltage V
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LMBT2907LT1
LMBT2907ALT1
LMBT2907LT1
OT-23
2907 TRANSISTOR PNP
1N916
LMBT2907
LMBT2907ALT1
LMBT2907ALT1G
LMBT2907LT1G
Lo8.3
LO81
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon 3 COLLECTOR LMBT2907LT1 LMBT2907ALT1 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage
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LMBT2907LT1
LMBT2907ALT1
LMBT2907LT1
OT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40 –60 V CEO Collector–Base Voltage
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LMBT2907LT1G
LMBT2907ALT1G
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Untitled
Abstract: No abstract text available
Text: General Purpose Transistor PNP Silicon 3 COLLECTOR MMBT2907LT1 MMBT2907ALT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value 2907 2907A V CEO Collector–Base Voltage V CBO –60 Vdc Emitter–Base Voltage V EBO –5.0 Vdc –600 mAdc IC –60 Unit Collector–Emitter Voltage
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MMBT2907LT1
MMBT2907ALT1
236AB)
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2907 TRANSISTOR PNP
Abstract: 2907a TRANSISTOR PNP 2907A transistor 2222a npn 2907A 2907a transistor transistor 2907 2N2907 PNP Transistor to 92 2907 ST 2222
Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.
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2N2907
2N2907A
150mA,
500mA,
100MHz
2907 TRANSISTOR PNP
2907a TRANSISTOR PNP
2907A
transistor 2222a
npn 2907A
2907a transistor
transistor 2907
2N2907 PNP Transistor to 92
2907
ST 2222
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2907 TRANSISTOR PNP
Abstract: 2907a TRANSISTOR PNP 2907a
Text: 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.
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2N2907
2N2907A
500mA,
150mA,
100MHz
2907 TRANSISTOR PNP
2907a TRANSISTOR PNP
2907a
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2907 TRANSISTOR PNP
Abstract: 2907A 2907a TRANSISTOR PNP transistor 2222a st 2222A npn 2907A 2N2907 PNP Transistor to 92 transistor 2907 2907 ST 2222
Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.
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2N2907
2N2907A
150mA,
500mA,
100MHz
2907 TRANSISTOR PNP
2907A
2907a TRANSISTOR PNP
transistor 2222a
st 2222A
npn 2907A
2N2907 PNP Transistor to 92
transistor 2907
2907
ST 2222
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2907 TRANSISTOR PNP
Abstract: 2907a 2907 2907a transistor 2907a TRANSISTOR PNP npn 2907A TRANSISTOR S2F a 2907 MARKING 2907A transistor 2907
Text: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking SMBT 2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23
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VPS05161
OT-23
2907/A
EHP00752
EHP00753
Oct-14-1999
EHP00754
2907 TRANSISTOR PNP
2907a
2907
2907a transistor
2907a TRANSISTOR PNP
npn 2907A
TRANSISTOR S2F
a 2907
MARKING 2907A
transistor 2907
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Untitled
Abstract: No abstract text available
Text: SMBT2907A PNP Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2222A NPN 2 1 Type Marking SMBT2907A s2F Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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SMBT2907A
SMBT2222A
VPS05161
Jul-11-2001
2907/A
EHP00752
EHP00753
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2907 TRANSISTOR PNP
Abstract: 2907 S2F MARKING SOT23 MMBT2222A SMBT2222A
Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration 2=E 3=C
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SMBT2907A/MMBT2907A
SMBT2222A/
MMBT2222A
SMBT2907A/MMBT2907A
VPS05161
2907/A
EHP00752
EHP00753
Jun-12-2002
2907 TRANSISTOR PNP
2907
S2F MARKING SOT23
MMBT2222A
SMBT2222A
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Untitled
Abstract: No abstract text available
Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration
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SMBT2907A/MMBT2907A
SMBT2222A/
MMBT2222A
VPS05161
SMBT2907A/MMBT2907A
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2907 TRANSISTOR PNP
Abstract: 2907 MMBT2222A SMBT2222A
Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F
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SMBT2907A/MMBT2907A
SMBT2222A
MMBT2222A
SMBT2907A/MMBT2907A
2907 TRANSISTOR PNP
2907
MMBT2222A
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Untitled
Abstract: No abstract text available
Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN Type Marking SMBT2907A/MMBT2907A s2F Pin Configuration 1=B
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SMBT2907A/MMBT2907A
SMBT2222A
MMBT2222A
SMBT2907A/MMBT2907A
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SMBT2222A SOT23
Abstract: of ic 2907
Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F
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SMBT2907A/MMBT2907A
SMBT2222A
MMBT2222A
SMBT2907A/MMBT2907A
SMBT2222A SOT23
of ic 2907
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2907 TRANSISTOR PNP
Abstract: marking eh sot23 of ic 2907 2907 2907 TRANSISTOR MMBT2222A SMBT2222A
Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN Type Marking SMBT2907A/MMBT2907A s2F Pin Configuration 1=B
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SMBT2907A/MMBT2907A
SMBT2222A
MMBT2222A
SMBT2907A/MMBT2907A
2907 TRANSISTOR PNP
marking eh sot23
of ic 2907
2907
2907 TRANSISTOR
MMBT2222A
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MARKING 7A SOT89
Abstract: SXT2907 SXT2907A T2907A
Text: SIEMENS PNP Silicon Switching Transistor SXT 2907 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings
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OCR Scan
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Q68000-A8300
OT-89
EHP00899
MARKING 7A SOT89
SXT2907
SXT2907A
T2907A
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2907 TRANSISTOR PNP
Abstract: transistor 2907 Q68000-A8300 MARKING 7C
Text: SIEMENS PNP Silicon Switching Transistor • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage SXT 2907 A Type Marking Ordering Code tape and reel PinC Contigui ation 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E
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Q68000-A8300
OT-89
----VBE-20V
fl53SbDS
23SLDS
Q155blfl
2907 TRANSISTOR PNP
transistor 2907
MARKING 7C
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Untitled
Abstract: No abstract text available
Text: 32E D • fl23fc.320 ÜQL73L3 S « S I P PNP Silicon Switching Transistor SXT 2907 A _ SIEMENS/ SPCL-, SEMICONDS _ * f 3 * 7 -/* • • High current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Type M arking Ordering code fo r
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fl23fc
QL73L3
23b320
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Untitled
Abstract: No abstract text available
Text: TOSHIBA R N 2907-R N 2909 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2907, RN2908, RN2909 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm 2 .1± 0.1 1.25 ± 0.1 • • Including Two Devices in US6
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2907-R
RN2907,
RN2908,
RN2909
RN1907-1909
RN2907
RN2908
RN2909
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Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PA CKAGE T O -18 T O 206A A 18 D E V IC E TY PE ^C E O Ic sus VOLTS (m ax ) A M PS 2N 2906 40 2N 2906A ^FE @ y ^C E VcE(sat) m in /m ax @ m A /V @ Ic^B V @ m A /m A 0.6 40/120@ 150/10 60 0.6 2N 2907
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