2N2907A Search Results

2N2907 application notes

Abstract: 2N2907 a TRANSISTOR
Contextual Info: MCC 2N2907 2N2907A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • High current max.600mA Low voltage (max.60V) Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

Contextual Info: 2N2907AUA Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS 2N2907AUA 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UA package, is ideal to drive

2N2907AUBJS

Abstract: 2N2907AUBJV 2N2907AUB 2N2907AUBJ
Contextual Info: 2N2907AUB Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2907AUBJ • JANTX level (2N2907AUBJX)

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

BCY72 MOTOROLA

Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200

2N2907A die

Abstract: PNP 2N2907 2N2907 chip 2N2905A 2N2907AUB 2n2907 or similar PNP 2N2907A 2N2907 2N2905 2C2907A
Contextual Info: Data Sheet No. 2C2907A Generic Packaged Parts: Chip Type 2C2907A Geometry 0600 Polarity PNP 2N2905, 2N2905A, 2N2907, 2N2907A Chip type 2C2907A by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier

Contextual Info: 2N2907A Small Signal Switching Transistor PNP Silicon http://onsemi.com Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage

tn-59

Abstract: 2222 NPN N 2222 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2906A 2N2907
Contextual Info: A/Ietal-Encased SPRAGUE Silicon SEPT T ran sistors HIGH-SPEED, MEDIUM CURRENT Type No. 2N2221 2N2221A 2N2222 2N2222A 2N2369 2N2906 2N2906A 2N2907 2N2907A 2N3115 2N3116 2N3135 2N3136 TN-54 TN-60 TN-62 TN-64 TQ-60 TQ-62 TQ-64 2N1469 2 N1469A 2N2218 2N2218A

PN2907A

Abstract: 2N2907A 2N2907A die 10D3 2N2222A PN2222A 2n2222a to 92 TO-92 Gehause 2N2907A plastic
Contextual Info: PN2907A / 2N2907A PN2907A / 2N2907A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2005-11-21 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW

2N2907 PNP Transistor to 92

Abstract: 2N2907A plastic 2N2907 NPN Transistor 2n2907 2N2907A TO-92 2N2907A 2N2907 plastic 2N2907 TRANSISTOR 2N2907 TO-92 2N2907 PNP Transistor
Contextual Info: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended.

Contextual Info: 2N2907A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2907AJ • JANTX level (2N2907AJX)

2N2905A

Abstract: 2N2907A 2N2905a equivalent 2N2907A diagram 2N2905A switch circuit M2N2905A 2N2907A PNP Transistor equivalent 2N2907A bex st
Contextual Info: 2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose

2N2907

Abstract: ic 4521 2N2907 TRANSISTOR
Contextual Info: MCC 2N2907 2N2907A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • High current max.600mA Low voltage (max.60V) PNP Switching Transistors Maximum Ratings

JAN2N4033

Abstract: JANTX2N2907 2N390E 2N4033 HS2907A
Contextual Info: Microsemi Microsemi Division Package Outline kype iif PNP 2N2907A HS2907A 2N2907A 2N2907A JANTXV2N2907 HS5087 HS3904 HS3906 2N4029 JAN2N4029 JANTX2N4029 JANTXV2N4029 2N390E 2N4403 PN2907A 2N3811L JANTX2N3810 JANTX2N3810L JANTX2N3811 JANTX2N3811L JANTXV2N3810

Contextual Info: 2N2907A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2907AJ • JANTX level (2N2907AJX)

MIL-PRF-19500

Abstract: 2N4033 2N3055 2N5038 JANS 2n2222au MIL-PRF-19500/336 MIL-PRF-19500/2n7588 MIL-PRF-19500/391 mil-prf-19500/JANTXV2N6341 2N5415
Contextual Info: New England Semiconductor Announces Its Certified Mil-Prf-19500 JANS Program. JANS Qualification Lots In Process By Family Mil-Prf-19500/251 -2N2219 Mil-Prf-19500/291 -2N2907A Mil-Prf-19500/455 -2N5665 Mil-Prf-19500/251 -2N2219A Mil-Prf-19500/291 -2N2907AUA

2N2907A SEMICOA

Abstract: 2N2907A equivalent 2N2907A
Contextual Info: Data Sheet No. 2N2907A Generic Part Number: 2N2907A Type 2N2907A Geometry 0600 Polarity PNP Qual Level: JAN - JANS REF: MIL-PRF-19500/291 Features: • • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-18 case.

2N3055E specification

Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
Contextual Info: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349

TST002

Abstract: 11-7114 121-819 2N2907A 2N2907ACSM 2N2907ACSM-RH TST001 101902 2839E
Contextual Info: 2N2907ACSM-RH HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)

2N2907 Transistor

Abstract: 2N2907 2N2907A v2n2907a J 2N2907 2N2907 philips
Contextual Info: b^E D N AUER PHILIPS/DISCRETE • 1,^53^31 ooaaia^ 04b i IAPX 2N2907 2N2907A I SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P medium power transistors in T O -18 metal envelopes designed primarily for high-speed switching and driver applications fo r industrial service.

TRANSISTOR AH-16

Abstract: AH-16 transistor
Contextual Info: Small Signal General Purpose Transistor PNP 2N2907A Small Signal General Purpose Transistor (PNP) Features • Switching and Linear Application DC to VHF Amplifier Application • RoHS Compliant TO-18 Mechanical Data TO-18, Metal can package Case: Terminals:

BC25SB

Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR 2N2907A 2N2905AL

LE17

Abstract: QR217 2N2907AC1B-JQRS
Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907AC1 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2N4033

Abstract: 2N2905 2N3702
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS POLA­ RITY CASE 2N2838 2N2868 2N2897 2N2904 2N2905 P N N P P 2N2905A 2N2906 2N2906A 2N2907 2N2907A TYPE NO. H FE Vc, COMPLE­ C* h min max MENTARY MHz (MHz) TYPE max (mA) VcE (V) (V) (A) 225 120 200 120