2955 MOSFET Search Results

MTP2955

Abstract: TMOS Power FET diode h5e 221A-06 AN569 MTP3055E Motorola TMOS Power FET P-Channel
Contextual Info: b 3 b ? 2 S 4 DO'iflfllb 121 • MOTb M O T O R O L A SC C X S T R S / R F MOTOROLA H SEM ICONDUCTO R TECHNICAL DATA M T P 2955 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES RDS on) = 0.3 OHM

2955 mosfet

Abstract: LTC2955TS8-1 LTC2955DDB-1 LTC2955ITS8-2 ltc2955-1 LTC2955IDDB-1 ltc2955 LTC2955-2 LTC2955TS8-2 LTC2955ITS8-1
Contextual Info: LTC2955 Pushbutton On/Off Controller with Automatic Turn-On DESCRIPTION FEATURES n n n n n n n n n n Automatic Turn-On Via Voltage Monitor Input Wide Input Supply Range: 1.5V to 36V Low Supply Current: 1.2 A ±25kV ESD HBM on PB Input ±36V Wide Input Voltage for PB Input

a2955

Abstract: 2955 mosfet 2955 SOT-223
Contextual Info: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes Applications • • • • Power Supplies PWM Motor Control Converters Power Management

NTF2955

Abstract: NTF2955T1 NTF2955T3 50Vds
Contextual Info: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes http://onsemi.com Applications • • • • Power Supplies PWM Motor Control Converters

2955 sot223

Abstract: NTF2955 NTF2955T1 NTF2955T3 MJ 2955 data 2955 SOT-223 P-channel sot-223
Contextual Info: NTF2955 Power MOSFET −60 V, 2.4 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes http://onsemi.com Applications • • • • Power Supplies PWM Motor Control Converters

2SK3772-01

Contextual Info: 2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

SPF12

Contextual Info: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators

Contextual Info: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators

2sk3773

Abstract: 2SK3773-01MR sd 2955
Contextual Info: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

Contextual Info: 2SK3772-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters

300v 32a mosfet

Contextual Info: 2SK3773-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators

diode sj

Abstract: 2SK3774-01L
Contextual Info: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators

2SK3772-01

Contextual Info: 2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

2sk3773

Abstract: 12/24 v dc-dc converter schematic 2SK3773-01MR
Contextual Info: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

2SK3775-01

Contextual Info: 2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings mm Super FAP-G Series 200406 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)

fr 2955

Abstract: 2SK3775-01
Contextual Info: 2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings mm Super FAP-G Series 200406 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET

2955G

Abstract: NTF2955T1G NTF2955 NTF2955T1
Contextual Info: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes • Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −60 V

Contextual Info: N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 mΩ Features General Description „ Shielded Gate MOSFET Technology „ High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that

V753

Abstract: FDMS86200DC
Contextual Info: FDMS86200DC N-Channel Dual CoolTM Power Trench MOSFET 150 V, 28 A, 17 mΩ Features „ Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 28 A, 17 mΩ Features General Description „ Shielded Gate MOSFET Technology „ High performance technology for extremely low rDS on This N-Channel MOSFET is produced using Fairchild

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

MTD2955

Abstract: 2955 mosfet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD2955 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r P-Channel Enhancem ent-M ode S ilicon G ate TM O S D PA K fo r Surface M o u n t or Insertion M ount TMOS POWER FET 12 AMPERES rDS{on = 0.3 OHM 60 VOLTS

Marking 2955

Abstract: MMFT2955ET1 MMFT2955E 2955 mosfet
Contextual Info: MOTOROLA O rder this docum ent by M M FT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount This advanced E -F E T is a TM O S medium pow er M O SFET designed to withstand high energy in the avalanche and com m uta­