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    MTP3055E Search Results

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    MTP3055E Price and Stock

    Fairchild Semiconductor Corporation MTP3055E

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    Bristol Electronics MTP3055E 1,069
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    Motorola Semiconductor Products MTP3055E

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    Quest Components MTP3055E 45
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    Motorola Semiconductor Products MTP3055EL

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    Bristol Electronics MTP3055EL 62
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    STMicroelectronics MTP3055E

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    Quest Components MTP3055E 828
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    Motorola Semiconductor Semiconductor MTP3055E

    TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,14A I(D),TO-220AB
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    Quest Components MTP3055E 130
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    MTP3055E Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTP3055E STMicroelectronics N - CHANNEL 60V - 0.1W - 12A -TO-220 STripFET] POWER MOSFET Original PDF
    MTP3055E STMicroelectronics N-Channel 60 V - 0.1 ohm -12 A TO-220 STripFET Power MOSFET Original PDF
    MTP3055E STMicroelectronics N - CHANNEL 60V - 0.1W - 12A TO-220 STripFET] MOSFET Original PDF
    MTP3055E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP3055E Motorola N-channel TMOS power FET. 60 V, 12 A, Rds(on) 0.15 Ohm. Scan PDF
    MTP3055E Motorola Switchmode Datasheet Scan PDF
    MTP3055E Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MTP3055E Unknown FET Data Book Scan PDF
    MTP3055E Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP3055EFI Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP3055EL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP3055EL Motorola N-channel TMOS power FET logic level. 60 V, 12 A, Rds(on) 0.18 Ohm. Scan PDF
    MTP3055EL Motorola Switchmode Datasheet Scan PDF
    MTP3055EL Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MTP3055EL Unknown FET Data Book Scan PDF
    MTP3055EL Unknown Shortform Datasheet & Cross References Data Short Form PDF

    MTP3055E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTP3055EFI

    Abstract: MTP3055E
    Text: MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E MTP3055EFI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.15 Ω < 0.15 Ω 14 A 10 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF MTP3055E MTP3055EFI 100oC 175oC O-220 ISOWATT220 MTP3055EFI MTP3055E

    Untitled

    Abstract: No abstract text available
    Text: , On&. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP3055E N-CHANNEL 60V-0.1Q-12A TO-220 STripFET MOSFET TYPE MTP3055E VDSS 60 V RDS(on) ID < 0.15 a 12 A TYPICAL RDS(on) = 0.1 Q AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF MTP3055E 1Q-12A O-220

    Untitled

    Abstract: No abstract text available
    Text: MTP3055E Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D)10 @Temp (øC)100# IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)70# Minimum Operating Temp (øC)


    Original     		PDF MTP3055E

    MTP3055E

    Abstract: MTP3055EFI
    Text: MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E MTP3055EFI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.15 Ω < 0.15 Ω 14 A 10 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF MTP3055E MTP3055EFI 100oC 175oC O-220 ISOWATT220 MTP3055E MTP3055EFI

    MTP3055E

    Abstract: MTP3055E power supply schematic diagram dc-dc
    Text: MTP3055E  N - CHANNEL 60V - 0.1Ω - 12A -TO-220 STripFET POWER MOSFET T YPE V DSS R DS o n ID MTP3055E 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE


    Original     		PDF MTP3055E -TO-220 175oC O-220 20oelectronics. MTP3055E MTP3055E power supply schematic diagram dc-dc

    Untitled

    Abstract: No abstract text available
    Text: MTP3055EL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)26 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-65


    Original     		PDF MTP3055EL

    MTP3055E

    Abstract: stmicroelectronics datecode TO-220
    Text: MTP3055E  N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET MOSFET T YPE MTP3055E • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.15 Ω 12 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE APPLICATION ORIENTED


    Original     		PDF MTP3055E O-220 175oC MTP3055E stmicroelectronics datecode TO-220

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    MTP3055E

    Abstract: No abstract text available
    Text: MTP3055E N-CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET POWER MOSFET TYPE MTP3055E • ■ ■ ■ ■ VDSS RDS on ID 60 V < 0.15 Ω 12 A TYPICAL RDS(on) = 0.1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175°C OPERATING TEMPERATURE APPLICATION ORIENTED


    Original     		PDF MTP3055E O-220 O-220 MTP3055E

    MTP3055E

    Abstract: No abstract text available
    Text: MTP3055E N-CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET POWER MOSFET TYPE MTP3055E • ■ ■ ■ ■ VDSS RDS on ID 60 V < 0.15 Ω 12 A TYPICAL RDS(on) = 0.1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175°C OPERATING TEMPERATURE APPLICATION ORIENTED


    Original     		PDF MTP3055E O-220 MTP3055E

    mgb20n40cl

    Abstract: MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530
    Text: Example of exceptions: MTD/MTP3055E Example of exceptions: MTD/MTP2955E CHANNEL POLARITY, N OR P VOLTAGE RATING DIVIDED BY 10 OPTIONAL SUFFIX: L FOR LOGIC LEVEL E FOR ENERGY RATED T4 FOR TAPE & REEL DPAK/D2PAK RL FOR TAPE & REEL (DPAK/D3PAK) HD FOR HIGH CELL DENSITY


    Original     		PDF MTD/MTP3055E MTD/MTP2955E MTP75N06HD O-220 O-220 O-247 O-264 OT-227B MMSF4P01HDR1 SG265/D mgb20n40cl MOTOROLA 136 DPAK MPIC2112DW MPIC2131FN mtd1p50e MPIC2151D MTP75N06 MMDF4N02 MTB3N120E mc6530

    MTP3055E

    Abstract: No abstract text available
    Text: MTP3055E N-CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET POWER MOSFET TYPE MTP3055E • ■ ■ ■ ■ VDSS RDS on ID 60 V < 0.15 Ω 12 A TYPICAL RDS(on) = 0.1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175°C OPERATING TEMPERATURE APPLICATION ORIENTED


    Original     		PDF MTP3055E O-220 MTP3055E

    Untitled

    Abstract: No abstract text available
    Text: MTP3055EFI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)10# I(DM) Max. (A) Pulsed I(D)7 @Temp (øC)100# IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)35# Minimum Operating Temp (øC)


    Original     		PDF MTP3055EFI

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    chopper transformer winding for 24v battery charging

    Abstract: hp laptop charging CIRCUIT diagram p50n05 43a Hall effect pin out 2N2219 transistor substitute PURE SINE WAVE inverter schematic diagram 2n3906 npn magnetic amplifier saturable core P50N05E pe-61592
    Text: Application Note 29 October 1988 Some Thoughts on DC/DC Converters Jim Williams and Brian Huffman INTRODUCTION Many systems require that the primary source of DC power be converted to other voltages. Battery driven circuitry is an obvious candidate. The 6V or 12V cell in a laptop computer must be converted to different potentials needed for


    Original     		PDF 1500pF CTX300-4 B-07T CTX33-4 D45C1 CTX-02-13949-X1 21-110J LT1533 an29f AN29-46 chopper transformer winding for 24v battery charging hp laptop charging CIRCUIT diagram p50n05 43a Hall effect pin out 2N2219 transistor substitute PURE SINE WAVE inverter schematic diagram 2n3906 npn magnetic amplifier saturable core P50N05E pe-61592

    MJ10009

    Abstract: 1N4937 2N3762 MTP3055E
    Text: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,


    Original     		PDF MJ10009 MJ10009 r14525 MJ10009/D 1N4937 2N3762 MTP3055E

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 S G S -T H O M S O N ¡m e ra « M TP3055E M T P 3 0 5 5 E FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V MTP3055E M TP3055EFI dss 60 V 60 V R DS on < 0.15 < 0.15 a a Id 14 A 10 A • TYPICAL RDS(on) = 0.1 Q . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF TP3055E MTP3055E TP3055EFI MTP3055E/FI ISQWATT220

    tp3055

    Abstract: MTP3055EFI TP3055E MTP3055E TP3055EFI
    Text: Gì SCS-THOMSON MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E M TP3055EFI V d ss R o S on Id 60 V 60 V 0.1 5 Q 0.15 Si 14 A 10 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF MTP3055E TP3055EFI MTP3055EFI O-220 ISOWATT220 ISQWATT220 MTP3055E/FI tp3055 MTP3055EFI TP3055E TP3055EFI

    transistor mtp3055e

    Abstract: MTP3055E-MOTOROLA T1N2 221A-06 AN569 MTP3055 MTP3055E
    Text: M OT O R O L A SC X S T R S / R F b 3 b 7 E S 4 ODTflflEl 5 ^ b&E D n o T b MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MTP3055E T M O S IV N-Channel Enhancem ent-Mode Motorola Preferred Device Pow er Field Effect Transistor This advanced " E " series of T M O S power M O S F E T s is


    OCR Scan     		PDF MTP3055E transistor mtp3055e MTP3055E-MOTOROLA T1N2 221A-06 AN569 MTP3055 MTP3055E

    tp3055

    Abstract: TP3055E
    Text: Order this data sheet by MTP3055E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M TP3055E TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor This advanced "E " series o f TMOS power MOSFETs is designed to w ithstand high energy in the avalanche and


    OCR Scan     		PDF MTP3055E/D MK145BP, C57092 MTP3055E tp3055 TP3055E

    TP3055E

    Abstract: 40AMJ tp3055 MTP3055E MTP3055EFI TP3055EFI GC2809D
    Text: SGS-THOMSON * 5 3055E M TP3055EFI mtp iLiO M iQ £I 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E M TP3055EFI • . ■ . ■ ■ . V dss RDS(on) Id 60 V 60 V < 0.15 £2 < 0.15 a 14 A 10 A TYPICAL RDS(on) = 0.1 AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF 3055E TP3055EFI MTP3055E TP3055E 40AMJ tp3055 MTP3055EFI TP3055EFI GC2809D

    Untitled

    Abstract: No abstract text available
    Text: MTP3055E N - CHANNEL 60V -0.1 £2- 12A -TO-220 STripFET POWER MOSFET TYPE M TP3055E V R dss 60 V d Id S o ii < 0.15 Q. 12 A . • TYPICAL RDS(on) =0.1 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . 175°C OPERATING TEMPERATURE . APPLICATION ORIENTED


    OCR Scan     		PDF MTP3055E -TO-220 TP3055E

    IN5248B

    Abstract: G5LE-114P-PS toko rcl circuit inter CV 203 TK84819 Toko inductor RCL znr 14k ECK-D2H152KBE Beckman Industrial spw transformer 602
    Text: rSTOKO TK84819 POWER FACTOR CONTROLLER PWM COMBO P^EUMOGMmf 0MF AT0©[N] FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Reduced Overall Current Consumption Reduced Start-Up Current Slow Start Following Current Limit Shutdown


    OCR Scan     		PDF ML4819 TK84819 IEC-555 TK84819 IC-112-TK84819 IN5248B G5LE-114P-PS toko rcl circuit inter CV 203 Toko inductor RCL znr 14k ECK-D2H152KBE Beckman Industrial spw transformer 602