29DL16 Search Results

Contextual Info: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « 29DL162C/29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES

SA30* diode

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

DIODE marking A19

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: 29DL16XTE/BE70/90 Data Sheet Retired Product 29DL16XTE/BE 70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

20154TQ-C

Abstract: LXT972LC 29LV040B L1682B1J000 dynamite RC32300 L1682 MT4LSDT464HG-10EC3
Contextual Info: RC32351 System Recommendations 79RC32351 Notes Revision History February 5, 2002: Initial publication. Introduction The RC32351 Integrated Communications Processor meets the requirements of various embedded communications applications including residential gateways, SOHO routers, and wireless systems. It is a

Contextual Info: ADVANCE INFORMATION AMDZ1 29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • — Data can be continuously read from one bank w hile executing erase/program functions in other bank.

BGA-48P-M13

Abstract: DS05-20874-4E FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

Hyundai central locking

Abstract: bit 3501 Architecture HY29DL162 HY29DL163
Contextual Info: 29DL162/29DL163 16 Megabit 2M x 8/1M x16 Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications

DS05-20880-3E

Abstract: FPT-48P-M19 FPT-48P-M20 SA30* diode
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTE/BE70/90 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes

DS05-20874-4E

Abstract: BGA-48P-M13 FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTD/BD -70/90/12 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

NAND Flash Programmer with TSOP-48 adapter

Abstract: INTEL Core i7 860 schematic diagram inverter lcd monitor fujitsu MB506 ULTRA HIGH FREQUENCY PRESCALER fujitsu LVDS vga MB89625R VHDL code simple calculator of lcd display JTag Emulator MB90F497 Millbrook BGA TBA 129-5
Contextual Info: Master Product Selector Guide February 2001 Fujitsu Microelectronics, Inc. Contents Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Application Specific ICs ASICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

DS05-20880-3E

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: PR ELIM IN ARY A M D il 29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L A D VANTAG ES • ■ ■ Sim ultaneous R ead/W rite o perations — Data can be continuously read from one bank w hile

FPT-48P-M19

Abstract: FPT-48P-M20 SA10 SA11 SA12 222eh 222DH 222BH BD703 mbm29dl16xtd
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTD-70/-90/-12/29DL16XBD-70/-90/-12 • FEATURES • 0.33um Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTD/BD -70/90 • FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “29DL16XTD/BD Device Bank Divisions Table”

222DH

Abstract: SKB 7 02 BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 mbm29dl16xtd
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-4E FLASH MEMORY M l l l 16M 2M X 8/1M X 16 BIT

mbm29dl16xtd

Contextual Info: 29DL16XTD -70/90 29DL16XBD -70/90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

mxic 29lv160

Abstract: 29lv160 Flash 29LV160 MX29LV160 29lv intel 28f160 28F160C3 FBGA48 amd Block Lock Bit amd Block Lock Bit Reset
Contextual Info: Macronix International Co., Ltd. Taipei Office: 12F, No.4, Sec.3, Min Chuan East Road, Taipei, Taiwan, R.O.C. Tel: 886-2-25093300 Fax: 886-2-25092200 Subject: Shorten the engineer’s efforts for designing in MX29LW160T/B and MX29LV160 instead of Intel 28F160B3/C3 and AMD Am29LV160.

Contextual Info: PRELIMINARY A M D il 29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ ■ 20 Year data retention at 125°C

1820-1940

Abstract: MBM29DL161BD-90PFTN MBM29DL163TD-90PFTN BGA-48P-M13 FPT-48P-M19 FPT-48P-M20 mbm29dl16xtd
Contextual Info: 29DL16XTD/BD-70/90 Data Sheet Retired Product 29DL16XTD/BD -70/90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

32 Megabit 3.0-Volt only Page Mode Flash Memory

Contextual Info: 29DL162/29DL163 16 Megabit 2M x 8/1M x16 Low Voltage, Dual Bank, Simultaneous Read/Write Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications

DS05-20880-1E

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT Dual Operation 29DL16XTE/BE -70/90/12 • FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1)