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    29E10 Search Results

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    29E10 Price and Stock

    Rochester Electronics LLC BYW29E-100,127

    NOW WEEN - BYW29E-100 - ULTRAFAS
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    DigiKey BYW29E-100,127 Bulk 5,691 646
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    Hammond Manufacturing 229E10

    PWR XFMR SEMI-TORO 2VA TH
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    DigiKey 229E10 Bulk 3 1
    • 1 $15.87
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    Newark 229E10 Bulk 37 1
    • 1 $17.33
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    • 100 $11.72
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    RS 229E10 Bulk 1
    • 1 $26.28
    • 10 $24.45
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    Powell Electronics 229E10 24 1
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    Master Electronics 229E10
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    • 100 $9.48
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    WeEn Semiconductor Co Ltd BYW29E-100,127

    DIODE STANDARD 100V 8A TO220AC
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    DigiKey BYW29E-100,127 Tube 6,000
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    Avnet Americas BYW29E-100,127 Tube 10 Weeks 6,000
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    Mouser Electronics BYW29E-100,127
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    TME BYW29E-100,127 552 1
    • 1 $0.718
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    Avnet Silica BYW29E-100,127 3,000 9 Weeks 1,000
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    EBV Elektronik BYW29E-100,127 5,000 9 Weeks 1,000
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    New Advantage Corporation BYW29E-100,127 4,000 1
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    RAF Electronic Hardware 3629-E-1032-AL

    HEX SWAGE STANDOFFPLAIN ALUMINUM
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    ITW Lumex SSP-D29E10SYC-12V

    LED DOME 10MM E10 590NM SUP YLW
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    29E10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BYW29E-100

    Abstract: T0220AB byw29e to3 HEATSINK BYW29E100
    Contextual Info: P H ILIP S INTERNATIONAL D ata sheet status Preliminary specification d ate of issue February 1991 G ENERA L DESCRIPTION Glass passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra-fast


    OCR Scan     		BYW29E-100/150/200 T0220AB 711002b 00242GÃ T0220AC; T0220 BYW29E-100 T0220AB byw29e to3 HEATSINK BYW29E100 PDF

    COMPLEMENTARY PNP-NPN TRANSISTORS

    Abstract: 2N5354 2N5355 2N5356 2N5418 2N5419 2N5420 D29E1 D29E2 D33D21
    Contextual Info: SILICON SIGNAL SWITCHING & AMPLIFIER COMPLEMENTARY PNP-NPN PAIRS Type NPN PNP 2 N 5354 V c E fSATJ lllFE V Pt < 25°C ~(mW) (mA) Min. Max. @ 50mA, 2.5mA Max. (V) VcEO @ 1V, 50m A lc ’ Ccb @ 10V, 1M H z Typical (Pf) ft Typical (MHz) Package Outline No.


    OCR Scan     		2N5354 2N5418 2N5355 2N5419 2N5356 2N5420 500mA D33D26 D29E7 D33D27 COMPLEMENTARY PNP-NPN TRANSISTORS 2N5354 2N5355 2N5356 D29E1 D29E2 D33D21 PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


    OCR Scan     		PDF

    transistor pnp-npn

    Abstract: 2N6006 2N6000 2N6002 GET3013 GET3014 GET3638 GET3646 GET706 GET708
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 G ET3013 G ET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75m A 75m A t] 800m A PNP NPN pn p GET3014 GET3S3B GET3638A G ET3638


    OCR Scan     		50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 transistor pnp-npn 2N6006 2N6000 2N6002 GET3014 GET3638 PDF

    IC 4098

    Abstract: 2N5355 HS5306 2N5354 2N5356 2N5418 2N5419 2N5420 D29E1 D29E2
    Contextual Info: SILICON SIGNAL SWITCHING & AMPLIFIER COMPLEMENTARY PNP-NPN PAIRS Type NPN PNP 2N5354 V c E fSATJ lllFE V Pt < 2 5 °C ~(mW) (mA) Min. M ax. @ 50mA, 2.5m A M ax. (V) V cEO @ 1V, 50mA lc ’ Ccb @ 10V, 1MHz T yp ical (Pf) ft T yp ical (MHz) Package Outline No.


    OCR Scan     		2N5354 2N5418 2N5355 2N5419 2N5356 2N5420 500mA D33D26 D29E7 D33D27 IC 4098 2N5355 HS5306 2N5354 2N5356 D29E1 D29E2 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    LR8C

    Abstract: BYW29 T0220AB BYW29 diode rectifier
    Contextual Info: PHILIPS INTERNATIONAL « E , B 7ll062b 0021 S03 T m p m H T~Q3~ 7 D ata sh eet sta tu s Preliminary specification date of issu e February 1991 GENERAL DESCRIPTION G la ss passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low


    OCR Scan     		711DfiSb T0220AB BYW29E-100/150/200 T0220AC; T0220 LR8C BYW29 T0220AB BYW29 diode rectifier PDF