29F1611 Search Results

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MX29F1611

Contextual Info: Introduction Selection Guide PRELIMINARY 29F1611 FEATURES 16M-BIT[2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns

Contextual Info: PRELIMINARY 29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64

Contextual Info: — IW r a iU M X IC FEATURES ì m y MX29L1611 1 6 M-BIT[2 M X 8 / 1 M X 1 6 ] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM • • • • • • 3.3V ± 10% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast random access time: 100ns

MX29L1611

Contextual Info: Introduction PRELIMINARY MX29L1611 FEATURES 16M-BIT[2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM 3.3V ± 10% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast random access time: 100ns Fast pagemode access time: 50ns

Contextual Info: r a iU M — IWXIC FEATURES ì m y 29F1611 1 6 M-BIT[2 M X 8 / 1 M X 1 6 ] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM • • • • • • 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns

29F1611

Abstract: MX29F1611
Contextual Info: INDEX PRELIMINARY 29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

Contextual Info: IW DCIC FEATURES MX29F1 61 1 16M -BIT[2M x 8 /1 M x 1 61 CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM • • • • • • 5V ± 5% write, erase and read JED EC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns

MX29F1611

Contextual Info: INDEX PRELIMINARY 29F1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Low VCC write inhibit is equal to or less than 3.2V • Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64