29F40 Search Results

Contextual Info: SGS-THOMSON M 29F400T M 29F400B raD»H[Lll e'inM l)i!lD(ei 4 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical

29f400tc

Abstract: *22AB
Contextual Info: FLASH MEMORY 4M 512K x 8/256K x 16 BIT CMOS M BM 29F400TC-55-70-90/29F400BC-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

NCC equivalent

Contextual Info: 29F400T, 29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

29LV800

Abstract: 29f016 29f400 29F040
Contextual Info: Common Flash Interface Version 1.4 Vendor Specific Extensions Application Note Introduction This application note provides an overview of the changes implemented between versions 1.3 and 1.4 of the SpansionTM Flash memory Common Flash Interface CFI implementation.

Contextual Info: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce

T1A16

Abstract: 29LV116
Contextual Info: A M D ÎI Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and

amd 29F400AB

Abstract: 29F400AT 29F400AB
Contextual Info: PR E L IM IN A R Y 29F400AT/29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: Preliminary information Features • O r g a n iz a t io n : 5 1 2 K x 8 o r 2 5 6 K x 16 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 S m A m a x im u m re a d c u rre n t - 60 m A m a x im u m p ro g r a m c u rre n t - O n e 16K; tw o 8K; o n e 32K; a n d seven 64K b y te sectors

29LV033C

Contextual Info: ADVANCE INFORMATION AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce

Contextual Info: / A M D il A m 2 9 L V 0 1 7 B 16 Megabit 2 M x 8-Bit CM O S 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • S in g le p o w e r s u p p ly o p e ra tio n ■ Embedded Algorithms — Full voltage range: 2.7 to 3.6 volt read and write

032XM

Contextual Info: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce

AM29PL160CB

Contextual Info: Am29PL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only High Performance Page Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 16 Mbit Page Mode device — Byte (8-bit) or word (16-bit) mode selectable via BYTE# pin — Page size of 16 bytes/8 words: Fast page read

SA-275

Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Contextual Info: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document

Contextual Info: Hiyli P e r f o r m a n c i 1 •■ 29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n

M420000000

Abstract: FSB073 3FE00
Contextual Info: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector

FTA073

Contextual Info: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

AM29F017D-120

Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

AM29LV033C-120

Abstract: AM29LV033C-70 AM29LV033C-90 SA10 SA11 L033C AM29LV033C
Contextual Info: Am29LV033C Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

AM29DL640H

Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Contextual Info: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: A29L160B Series 2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Preliminary Boot Sector Flash Memory Document Title 2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue

A29L320ATV-70F

Abstract: 48pin flash programmer circuit 48pin TSOP A29L320ATV A29L320AUV-70UF A29L320ATV-70UF A29L320AUG-70F A29L320A
Contextual Info: A29L320A Series 4M X 8 Bit / 2M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Document Title 4M X 8 Bit / 2M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue April 12, 2006

Contextual Info: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.

PL129N

Abstract: 29f400 pl127 S29PL-N S71PL512ND0 sample code write buffer spansion
Contextual Info: S71PL512ND0 MirrorBit Flash Family Two S29PL256N Devices 32 M x 16-Bit CMOS 3.0-Volt only Simultaneous Read/Write, Page-Mode Flash Memory Data Sheet PRELIMINARY Notice to Readers: This document indicates states the current technical specifications regarding the Spansion product(s) described herein. The