TSR040 Search Results

AM29F016D-120

Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm

Contextual Info: AMDB Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and write operations for

Am29LV080

Contextual Info: ADVANCE INFORMATION AM DO Am29LV080 8 Megabit 1,048,576 x 8-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS Extended operating voltage range Ready/Busy output — 2.7 to 3.6 V for read and write operations — Hardware method for detection of program or

20510D

Contextual Info: P R E L IM IN A R Y AMD3 Am29LV004 4 Megabit 512 K x 8-Blt CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Contextual Info: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce

29F032B

Abstract: m29f032b
Contextual Info: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology

Am29DL400BT

Contextual Info: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank,

Contextual Info: PRELIMINARY AMDZ1 Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Optim ized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and w rite operations for

T1A16

Abstract: 29LV116
Contextual Info: A M D ÎI Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and

AM29F032

Abstract: am29f032b-120 AM29F032B-90
Contextual Info: AM D il Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

24SA27

Abstract: AM29F017B
Contextual Info: AM D Ì1 A m 2 9 F 0 1 7 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ Minim um 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125 C

Contextual Info: AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology

29LV008

Contextual Info: — P R E L IM IN A R Y — AMD Cl Am29LV008T/Am29LV008B 8 Megabit 1,048,576 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory • ■ ■ Single power supply operation ■ — Extended voltage range: 2.7 to 3.6 volt read and write operations for battery-powered

29LV033C

Contextual Info: ADVANCE INFORMATION AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce

032XM

Contextual Info: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce

Contextual Info: Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements

29DL400BT-70

Contextual Info: PRELIMINARY AMDil Am29DL400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations ■ Sector protection — Host system can program or erase in one bank,

Contextual Info: PRELIM IN ARY AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ Package options

AM29F017D-120

Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

AM29LV033C-120

Abstract: AM29LV033C-70 AM29LV033C-90 SA10 SA11 L033C AM29LV033C
Contextual Info: Am29LV033C Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

AM29F080B-120

Abstract: AM29F080B-150 AM29F080B-75 AM29F080B-90 SA10 df83
Contextual Info: Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F080 device

AM29F017D-120

Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F017D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with Am29F016C and Am29F017B ■ 5.0 V ± 10%, single power supply operation

SA10

Abstract: SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18
Contextual Info: Am29LV116D 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications ■ Manufactured on 0.23 µm process technology

AM29F016D-120

Abstract: AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 SA14 SA15
Contextual Info: Am29F016D Data Sheet The Am29F016D is not offered for new designs. Please contact your Spansion representative for alternates. The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any