2N2270 Search Results

Contextual Info: TY P E 2N2270 N -P -N SILIC ON TR A N S IS TO R B U L L E T IN N O . D L -S 7 3 1 1 9 4 7 , M A R C H 1 9 7 3 FOR M EDIUM -PO W ER, G E N E R A L PURPOSE A PPLICATIO N S •mechanical data absolute maximum ratings at 25°C case temperature unless otherwise noted

RCA-2N2270

Abstract: 2N2270 2N2270 RCA rca 2N2270 transistor 2n2270 SILICON TRANSISTOR FS 2 RCA Solid State Power Transistor
Contextual Info: E SOLID 3875081 STATE G E Öl SO LID STATE » E | 3Ö750Ö1 0D170T7 01E D T - l f - i l 17097 High-Speed Power 2N2270 File Number Silicon N-P-N Planar Transistor 24 TERMINAL DESIGNATIONS

2N2270

Abstract: transistor 2n2270
Contextual Info: 2N2270 High-Speed Powwer Transistors Silicon NPN Planar Transistor . 1 of 2 Home Part Number: 2N2270 Online Store 2N2270 Diodes High- Speed Po w w er Trans is t o rs ( Silic o n NPN Planar Trans is t o r)

2N2270

Contextual Info: 2N2270 MAXIMUM RATINGS R ating Sym bol V alu e U n it C o lle c to r-E m itte r V o lta g e v CEO 45 Vdc C o lle c to r -E m itte r V o lta g e , RgE *= 10 O h m s V CER 60 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 V dc E m itte r-B a s e V o lta g e

2N2270

Abstract: transistor 2n2270
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2270 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω

2N2270AL

Contextual Info: 2N2270AL Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)

2n3072

Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE(sat) VCE max (V) (V) (A) 2N2243A 2N2270 2N2297 2N2303 2N2309 N N N P N TO-39 TO-39 TO-39 TO-39 TO-39 800 1000 800 600 600 1 1 1 0.5

harris 2n2270

Abstract: 2n2270 27e transistor
Contextual Info: JT-3 *rC B P ow er Transistors 2N2270 HARRIS SEMICOND SECTOR File Number 27E D Silicon N-P-N Planar Transistor 24 4305271 0Gn?flfl 3 « H A S T E R M IN A L D E S IG N A T IO N S General-Purpose Type fo r Small-Signal, M edium -Power A pplications Features:

2N2270

Abstract: transistor 2n2270 RCA-2N2270 RCA Solid State Power Transistor D-07 2N2270 RCA
Contextual Info: E SOLID STATE 3875081 öl G E SOLID STATE DE | 3 Ö 7 S D Ö 1 ODITOT? 0 1E 17097 D T - l f ~ High-Speed Power Transistors_ 2N2270 File Number 2 4 Silicon N-P-N Planar Transistor TERMINAL DESIGNATIONS General-Purpose Type for Small-Signal, Medium-Power Applications

transistor 2n2270

Abstract: 2n2270 2N2270 equivalent
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2270 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω

2N3019A

Abstract: 2N3501A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N2270 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

2N2270

Contextual Info: 2N2270 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2270 is a NPN silicon transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

Contextual Info: 2N2270 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).90 @I(C) (A) (Test Condition)150m

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2270 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Ω Collector Emitter Voltage, RBE < 10Ω

Contextual Info: 2N2270S Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.200

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2n3053A complementary

Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max

TO-39 1000 V

Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

bc140

Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,

2N3645

Abstract: 2N4355 2N3503 fairchild 2N3642 2N3644 T0105 PN3693 2N915 transistor 2N3504 2N3504
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VqEO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) Item DEVI CE NO. Po larity NPN PNP @ <C h FE v CEO (hfe) (VCER) mA V Min/Max Min VCE(sat) V

bc140

Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military