2N2405 Search Results

2n2405

Abstract: 2N1893
Contextual Info: 4302271 üün7ô3 4 HHAS P o w e r Tran sistors File N u m b e r 34 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 I ' 3 3 - 0 5 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p p lic a tio n s In In d u strial and C o m m e rc ia l E q u ip m e n t

2N2405

Contextual Info: 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • For Operation at Junction Temperature up to 200°C 0.89 max.

2N2405

Abstract: transistor 1150
Contextual Info: 2N2405 Medium Power Silicon N-P-N Planar Transistor. 11.50 Transisto. 1 of 1 Home Part Number: 2N2405 Online Store 2N2405 Diodes M edium Po w er Silic o n N- P- N Planar Trans is to r. Transistors Enter code INTER3 at

Contextual Info: m 2N2405 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2405 is Designed for General Purpose Amplifier, and Switching Applications. MAXIMUM RATINGS 1.0 A lc 90 V V ce P d is s 1.0 W @ TA = 25 °C P d is s 5.0 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C

2N2405

Contextual Info: 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. • For Operation at Junction Temperature up to 200°C 0.89 max.

Contextual Info: 2N2405 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2405 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE

2N2405

Abstract: C2035
Contextual Info: ÀSII 2N2405 SILICON NPN TRANSISTOR DESCRIPTION: The 2N2405 is Designed for General Purpose Amplifier, and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 1.O A Vc e 9O V pd is s 1.O W @ Ta " 25 0C pd is s 5.O W @ Te " 25 0C Tj -65 0C to +2OO 0C

Contextual Info: ., fine. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) FEATURES • For Operation at Junction Temperature up

TIP290

Abstract: 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC
Contextual Info: POWER SILICON NPN Item Number Part Number I e 5 10 15 20 >= 30 BC618l 2N2405 2N2405S 2N2405S oTl1634 2N2611 SSP58C MJ029C b!F~f~4 35 40 BD400 2N2201 2N2202 2N2203 2N2204 2N2988 2N2992 2N2472 ~~~:~~ 45 50 2N2995 STll0 STll05 SVT100-5 DTl1654 2N5681 2N4001

2N2405

Abstract: 2N1893 transistor KD 503 RCA-2N2405 kd 503 transistor TA2235A RCA-ZN1893 TA2235
Contextual Info: G E SOLID STATE 3875081 □ 1 G E S O LI D S TAT E DE I 3Ö7SDÖ1 GD17CHE 5 | ~ 01E 17092 D -T -2 J-Z 3 _mgn-speea rower Transistors File N u m b e r 3 4 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p plic a tio n s

2N2405

Abstract: IN 5358
Contextual Info: 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • For Operation at Junction Temperature up to 200°C 0.89

Contextual Info: 2N2405 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)150m

Contextual Info: 2N2405S Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max

TO-39 1000 V

Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

bc140

Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,

bc140

Abstract: 2N2405 2N1893 2N2102 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

2N310B

Abstract: 2N2270
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

40409

Abstract: 40361 40317 40314 40323 2n2102 2n697a 40311 40407 40814
Contextual Info: 2N2102 FA M ILY [n-p-n] silicon f r = 120 MHz min; Py = 5 W max V R E (s a t)- V V p p (ia t)- V DESCRIPTION V C E O (sus) 2N TYPES V V V Tem p. -°c Curren t- m A V C E R<»U*) V C E V (sus) 0.01 0.1 10 50 150 - - - 'c 'C B •c 'b mA mA 1.5 150 15 1.3

BC338C

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

2N2310

Abstract: 2N2102A 2N2351 2N1990 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B