2N3057A Search Results

2N3057A

Contextual Info: Data Sheet No. 2N3057A Generic Part Number: 2N3057A Type 2N3057A Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-46 case.

Contextual Info: 2N3057A Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3057AJ • JANTX level (2N3057AJX)

Contextual Info: ¡J8BBBBB88& iwiHBBffi p e | M s mssssP .rfHHHHHHHHMh. m1 1 itittnnnnn hhhhhhk-. loniftBHhr. IIr ^888o 88% #f 1 l D a ta S h e e t No. 2 N 3 0 5 7 A $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3057A Type 2N3057A G eom etry 4500 Polarity NPN Qual Level: J A N -J A N S

Contextual Info: 2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also

2n3057

Contextual Info: 2N3057A Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3057A NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and

2n3700

Abstract: JTX 2N3019S 2N3700UB 2N3019 2N3700 JAN 2n3057a
Contextual Info: TECHNICAL DATA 2N3019 JAN, JTX, JTXV 2N3019S JAN, JTX, JTXV 2N3057A JAN, JTX, JTXV 2N3700 JAN, JTX, JTXV 2N3700UB JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/391 2N3019, 2N3019S TO-39 TO-205AD LOW-POWER NPN SILICON TRANSISTORS MAXIMUM RATINGS

Contextual Info: SE M IC O N D U C T O R TECHNICAL DATA 2N3019SJAN, JTX, JTXV, J A N S 2N3057AJAN, JTX, JTXV, J A N S 2N3700JAN, JTX, JTXV, J A N S CRVSTAIOMCS 2805 Veteran Highway Su»te 14 Ronkonkom* N Y. 1177ii Processed per MIL-S-19500 391 NPN Silicon Sm all-Signal Transistors

2N3019

Contextual Info: SEMICONDUCTOR! TECHNICAL DATA 2N3019S 2N3057A 2N3700. c r v s t a io n c s 2805 Vetwaos Highway Suite NPN Silicon Small-Signal Transistors 14 Ronkor;koma, N Y. 1177y . .designed for general-purpose switching and amplifier applications MAXIMUM RATINGS Rating

Contextual Info: 2N3057A+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m

2N305

Contextual Info: 2N3057A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3057AJ • JANTX level (2N3057AJX)

2N3057A

Contextual Info: 2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also

Contextual Info: 2N3057A+JANTX Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m

Contextual Info: 2N3057A+JANS Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m

Contextual Info: 2N3057A+JANTXV Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m

2n3019

Abstract: 2N3700 2N3700UB 2n3019 equivalent 2N3019S JTX 2N3019S 2N3057A 600C 2N3019S JAN
Contextual Info: TECHNICAL DATA 2N3019 JAN, JTX, JTXV, JANS 2N3019S JAN, JTX, JTXV, JANS 2N3057A JAN, JTX, JTXV, JANS 2N3700 JAN, JTX, JTXV, JANS 2N3700UB JAN, JTX, JTXV, JANS Processed per MIL-PRF-19500/391 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

2n3019

Abstract: 2N3700 2n3019 equivalent 2N3700UB 2N3019S 2n3019 transistor 2N3057A 2N3700S test 2N3700 TO-206AB
Contextual Info: TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 1

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

2n3298

Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

2N5581A

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B

MIL-PRF-19500

Abstract: 2N4033 2N3055 2N5038 JANS 2n2222au MIL-PRF-19500/336 MIL-PRF-19500/2n7588 MIL-PRF-19500/391 mil-prf-19500/JANTXV2N6341 2N5415
Contextual Info: New England Semiconductor Announces Its Certified Mil-Prf-19500 JANS Program. JANS Qualification Lots In Process By Family Mil-Prf-19500/251 -2N2219 Mil-Prf-19500/291 -2N2907A Mil-Prf-19500/455 -2N5665 Mil-Prf-19500/251 -2N2219A Mil-Prf-19500/291 -2N2907AUA

2N3810 LCC

Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *

N3020

Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
Contextual Info: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220