2N3441 Search Results

2N3441

Contextual Info: Inchange Semiconductor Product Specification 2N3441 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=3A ·Power dissipation -PD=25W @TC=25℃ APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as:

2n3441

Abstract: 2N3442 2N3439 2N3440 2N3583 2N3584 2N3585
Contextual Info: HIGH VOLTAGE NPN HIGH VOLTAGE SELECTOR CHART TO-66 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 TO-39 <2A Package •c V CE0 Volts 2N3440 250 2N3584 2N3585 300 2N3439 350 TABLE 5 - NPN HIGH VOLTAGE TRANSISTORS The transistors shown ¡n this table are characterised for high voltage operation in industrial, commercial

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3441 3 AMPERES NPN SILICON POWER TRANSISTOR NPN SILICON POWER TRANSISTOR . . . 2N3441 transistor is designed for use in general-purpose switching

2N3441

Abstract: ic 6264 NS2N
Contextual Info: File Number 2N3441, 2N6263, 2N6264 529 Medium-Power Silicon N-P-N Transistors Rugged Devices for Interm ediate, Power Applications in Industrial and Com m ercial Equipm ent Features: T E R M IN A L D E S IG N A T IO N S 2 N 6 2 6 4 . p r e m iu m ty p e fr o m 2 N 3 4 4 1 fa m ily

2N3441

Contextual Info: ÆàMOSPEC NPN SILICON POWER TRANSISTOR NPN 2N3441 .2N3441 transistor is designed for use in general purpose switching and linear amplifier application requiring high breakdown voltages. FEATURES * * * * Driver for High Power Outputs Series and Shunt Regulators

2N3441

Contextual Info: SEME 2N3441 LAB MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 3.86 (0.145) rad. 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) MEDIUM POWER

2N3441

Contextual Info: SavantIC Semiconductor Product Specification 2N3441 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=3A ·Power dissipation -PD=25W @TC=25 APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as:

2N3584

Abstract: 2N3442 2N3583 2N3439 2N3440 2N3441 2N3585
Contextual Info: HIGH VOLTAGE NPN HIGH V O LTA G E S E LE C T O R C H A R T TO -6 6 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 Package 'c TO-39 <2A V CEO Volts 250 2N3440 2N3584 2N3585 300 350 2N3439 TA B LE 5 - NPN HIGH V O LTA G E T R A N S IS T O R S The transistors shown in this table are characterised for high voltage operation in industrial,

Contextual Info: 2N3441+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)200# I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)6.0 @I(C) (A) (Test Condition)2.7

2N3441

Abstract: VK 27 CT 2n6264
Contextual Info: File Number 2N3441, 2N6263, 2N6264 529 HARRIS SEMICOND SECTOR SbE D M3Q2271 D04Ü425 TT4 * H A S -T -3 3 -C D / Medium-Power Silicon N-P-N Transistors Rugged Devices for Intermediate, Power Applications in Industrial and Commercial Equipment Features: TERMINAL DESIGNATIONS

2N3441

Abstract: 2N3441 JANTX
Contextual Info: TECHNICAL DATA 2N3441 JANTX MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/369 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

2N3441

Abstract: transistor 7150 booc power transistors 7150 Transistor
Contextual Info: 2N3441 NPN Power transistor for AF amplifiers and switching applications 2 N 3 4 4 1 is a sin g le -d iffu se d N P N silic o n transistor in a T O - 6 6 case. T h e collector is electrically co n n e c te d to the case. T h e transistor 2 N 3 4 4 1 is particularly suitable for

2N3441

Contextual Info: 2N3441 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3441 Availability Online Store

Contextual Info: PLESSEY SEMICOND/DISCRETE i 7220533 PLESSEY SEMICOND/DISCRETE DE~| 732D533 0G04C1S5 b | ~ 95D 04952 r-33-i/ HIGH VOLTAGE NPN HIGH VOLTAGE SELECTOR CHART TO-66 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 Package •c TO-39 <2A V C E0 Volts 2N3440 250 2N3584

2N3441

Contextual Info: NPN SILICON POWER TRANSISTOR NPN 2N3441 .2N3441 transistor is designed for use in general purpose switching and linear amplifier application requiring high breakdown voltages. FEATURES * * * * Boca Semiconductor Corp. BSC http ://www.bocasemi.com Driver for High Power Outputs

Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 369 Devices Qualified Level 2N3441 JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

2N3441 JANTX

Abstract: 2N3441
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/369 Devices Qualified Level 2N3441 JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

2N3441 RCA

Contextual Info: - G E SOLID STATE 3875081 ÔÏE~D~j| 3fl750fll 00173SS fl G E SOLID STATE 17355 0 1 E D J / w 3?“0? General-Purpose Power Transistors •File Number 529 2N3441, 2N6263, 2N6264 Medium-Power Silicon 'N-P-N Transistors Rugged Devices for Intermediate, Power Applications

Contextual Info: 2N3441+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)200# I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)6.0 @I(C) (A) (Test Condition)2.7

Contextual Info: 2N3441 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)200# I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)6.0 @I(C) (A) (Test Condition)2.7

2N6261

Contextual Info: -Jiolitron [ ^ » © T ©ATTM.©' Devices. Inc MEDIUM VOLTAGE CH IP N UM BER NPN SINGLE DIFFUSED MESA TRANSISTOR FORMERLY 06 CONTACT METALLIZATION B ase, Emitter a n d Collector Solder C o ated 95/5% le ad /tin . ASSEMBLY RECOMMENDATIONS It is ad v isa b le that:

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N3054

Abstract: 2n3773 power Amplifier 2N1482 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . P t to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . A A i 9U X 9U le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.