2N3637 Search Results

2N3025

Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
Contextual Info: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720

2N3637

Abstract: 2N3634 2N3635 2N3636 2n3637S transistor 2N3 2N3636.37 2N3634-2N3635
Contextual Info: Boca Semiconductor Corp. BSC http://www.bocasemi.com 2N3634 thru 2N3637 M A X I M U M R A T IN G S Symbol 2N3634 2N3635 2N3636 2N3637 C o lle cto r-E m itte r Voltage v CEO -1 4 0 -1 7 5 Vdc Collector-B ase V o ltage VCBO -1 4 0 -1 7 5 Vdc Em itter-Base V o ltage

Contextual Info: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) FEATURES • High Voltage Switching 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x .

2N3637

Contextual Info: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) FEATURES • High Voltage Switching 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x .

2N3635 MOTOROLA

Abstract: 2N3635 2N3637 2N3634 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N3635/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3635 2N3637 PNP Silicon 2 BASE 1 EMITTER 3 Rating Symbol 2N3635 2N3637 Unit Collector – Emitter Voltage VCEO – 140 – 175

Contextual Info: 2 N 3634 THRU 2N3637 HIGH VOLTAGE PNP SILICON TRANSISTORS GEOMETRY 400 • JAN. JAN-TX. JAN-TXV Available TJgTTVSTTage— to 175 • Sw itching and A m plifier A pplications MAXIMUM RATINGS S ym bol * * in g C o O c lo r E m ilia« V o i» « » wc e o vc»

2N3637 semicoa

Abstract: 2N3637
Contextual Info: Data Sheet No. 2N3637 Generic Part Number: 2N3637 Type 2N3637 Geometry TBD Polarity PNP Qual Level: Pending REF: MIL-PRF-19500/357 Features: • • • • General-purpose high gain, low power amplifier transistor which operates over a wide temperature range.

2N1132A

Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier.

2N4033

Abstract: 2N3494 2N5415
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637

Contextual Info: 2N3637DCSM DUAL PNP SILICON TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) FEATURES 4.32 ± 0.13 (0.170 ± 0.005)

Contextual Info: SILICON PNP TRANSISTOR 2N3637 • • • • • General Purpose PNP Silicon Transistor High Voltage, High Speed Saturated Switching Low Power Amplifier Applications Hermetic TO39 Package Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

2n3637

Abstract: 2N3636 2N3635 2N3634
Contextual Info: TECHNICAL DATA 2N3634, 2N3634L JTX, JTXV 2N3635, 2N3635L JTX, JTXV 2N3636, 2N3636L JTX, JTXV 2N3637, 2N3637L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/357 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

Contextual Info: 2N3634 thru 2N3637 M A X IM U M RATINGS Symbol 2N3634 2N3635 2N3636 2N3637 C o lle c to r -E m itte r V o lta g e v CEO -1 4 0 -1 7 5 V dc C o lle c to r-B a s e V o lta g e v CBO - 140 -1 7 5 Vdc E m itte r-B a s e V o lta g e vebo Rating 5.0 Unit A de C o lle c to r C u rre n t — C o n tin u o u s

Contextual Info: 2N3637+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)175 V(BR)CBO (V)175 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: TYPES 2N3634 THRU 2N3637 P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 1 1 9 3 4 , J U N E 1 9 7 3 H IG H -V O LT A G E TRAN SISTO RS FOR G EN ER A L PURPOSE A M P L IF IE R A N D SW ITCH IN G APPLICATIO N S • High V B R C EO . . . 140 V (2N 3634, 2N 3635) or 175 V (2N 3636, 2N 3637)

TRANSISTOR C 3068

Abstract: 2n3637 data 2N3637
Contextual Info: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • High Voltage Switching 12.70 (0.500) min. • Low Power Amplifier Applications 0.89 max. (0.035)

2N3637DCSM

Contextual Info: 2N3637DCSM DUAL PNP SILICON TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) FEATURES 4.32 ± 0.13 (0.170 ± 0.005)

2N3637

Contextual Info: 2N3637 PNP silicon general purpose transistor 14.04 Transistors Transist. 1 of 2 Home Part Number: 2N3637 Online Store 2N3637 Diodes PNP s ilic o n general purpo se t rans is to r Transistors Enter code INTER3 at

TRANSISTOR C 3068

Abstract: 2N3637
Contextual Info: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • High Voltage Switching 12.70 (0.500) min. • Low Power Amplifier Applications 0.89 max. (0.035)

2N3635

Abstract: 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L
Contextual Info: TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L Qualified Level JAN JANTX JANTXV JANS 2N3637 2N3637L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

2N3634

Abstract: 2N3635 JAN 2N3637 2N3635
Contextual Info: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Product Preview Low Power Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C unless otherwise noted

2n3634

Abstract: 2N3634 MOTOROLA
Contextual Info: 2N3634 M A X IM U M RATINGS thru Symbol 2N3634 2N3635 2N3636 2N3637 Unit C o lle c to r-E m itte r V olta g e v CEO -1 4 0 -1 7 5 Vdc C o lle c to r-B a se V o lta g e VCBO -1 4 0 -1 7 5 Vdc Rating E m itte r-B a se V o lta g e - 5 .0 vebo >c - 1 .0 Ade T o ta l D evice D issip a tio n

2N3834

Abstract: id9e
Contextual Info: T É L E » Y NE COMPO NENTS" Û T l T b ü a O Q Q b S a ? t. aöE D 2N3634 THRU 2N3637 HIGH VOLTAGE PNP SILICON TRANSISTORS O GEOMETRY 480 • JAN, JAN-TX, JAN-TXV Available • High Voltage— to 175 V. VCE0 • Switching and Amplifier Applications MAXIMUM RATINGS