2N3719 Search Results

2N3719

Contextual Info: 2N3719 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2N3171

Abstract: 2N3022 2N3195 2N3202 2N3183 2N3025 2N3026 2N3172 2N3719 2N3021
Contextual Info: industrial power transistors 128 SILICON PNP TRANSISTORS 5 Amp BREAKDOWN VOLTAGES TYPE NUMBER CASE SIZE 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204 2N3719

2N3025

Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
Contextual Info: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720

Contextual Info: <Se.rn.i- Conductor £Ptoducts., inc. 20 STERN AVE. SPRINGFIELD, NEW JERSE\.'07081 2N3719. 2N3720 2N3867. 2N3868 2N6303 3 AMPERE POWER TRANSISTORS PNP SILICON 40.60,80 VOLTS 6 WATTS TELEPHONE: (201 376-2922 /^ (212)227-6005 ,0fe\: (201) 376-8960 •MAXIMUM RA1riNGS

2N3719

Abstract: 2N3720
Contextual Info: VNE 6^17^05 00013535 ì COMPONENTS PNP 3 AMP 117*" #7-/7 2N3719 2N3720 POWER TRANSISTORS GEOMETRY 505 High VCEOsus •to 60V Low VCEsat - 0.75 Vdc High fT - 60 MHz min. MAXIMUM RATINGS PARAMETER SYMBOL 2N3719 2N3720 UNIT Collector Emitter Voltage Collector Base Voltage

ic 23721

Abstract: 23732 23721
Contextual Info: Micmsemi PNP Transistors | Part Number ' PNP JANTXV2N3763 JANTXV2N3763L 2N4126 2N3906 2N4403 PN2907A 2N5401 2N2907A 2NS091 2NS093 2N5094 2N5096 2N3053 2N3774 2N3778 2N3245 2N3775 2N3779 2N3776 2N3780 2N3777 2N3781 2N3660 2N3661 2N3782 2N3719 2N3867 2N3867S

2N3719

Contextual Info: 2N3719 SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3719 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS 3.0 A o m < Ie -40 V P d is s 6.0 W @ Te # 25 °C 1.0 W @ Ta # 25 0C Tj -65 0C to +200 0C

2N3719

Contextual Info: 2N3719 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2N3719

Contextual Info: 2N3719 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3719 SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3719 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -39 8.890- 9.398 MAXIMUM RATINGS 3.0 A lc V T -40 V ce P diss (6 0 9 6 - 6 .6 0 4 ) stg SEATING PLANE

2N3183

Abstract: 2N3184 2N3185 2N3195 2N3196 2N3198 2N3203
Contextual Info: COLLECTOR CURRENT = 5 AMPS PNP TYPES— Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N3178 2N3183 2N3184 2N3185 2N318« 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204 2N3719 2N3720 2N3867 2N3868 2N4999

2N3719

Abstract: 2N3720 11779
Contextual Info: CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.V. 11779 PNP3AMP 2N3719 2N3720 POWER TRANSISTORS GEOMETRY 505 • High VCEOsus - to 60V • Low VCEscrt-0.75 Vdc • High fT-60MHz min. MAXIMUM RATINGS PARAMETER Collector Emitter Voltage Collector Base Voltage

2N3719

Contextual Info: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N3719 APPLICATIONS: • • • High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: • Collector-Emitter Sustaining Voltage:

2N3719

Abstract: 2N3720
Contextual Info: T Y P ES 2N3719, 2N3720 P -N -P S ILIC O N PO W ER T R A N S IS T O R S TYPES 2N3719, 2N 3720 BULLETIN NO. DL-S 7111606, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP501, TIP502 Max t0ff of 0.4 ,us at lc = 1 A

Contextual Info: 2N3719 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)6.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3025

Abstract: 2N3021 2N3022 2N3023 2N3026 2N3024 2N3720 2N3719 DSASW0036859
Contextual Info: Device Type 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3719 2N3720 VCEO hFE V Min/Max 30 45 60 30 45 60 40 60 20/60 20/60 20/60 50/180 50/180 50/180 25/180 25/180 @ IC (A) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VCE @ IC (A) (sat) Max (V) 1.50 3.0 1.50 3.0 1.50

2N3720

Abstract: 2n3867
Contextual Info: MOTOROLA SC XSTRS/R 12E D | F b 3 fc,7 2 S 4 Q 0 ÛMM 7 7 5 | 2N3719, 2N3720 2N3867, 2N3868 2N6303 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON PNP POWER TRANSISTORS . designed for high-speed, medium-current switching and highfrequency amplifier applications.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N3775

Abstract: 2N3202 2N3203
Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS SPACE POWER ELECTRONICS "fll 00105 D T- 3 3 -o/ DlF|fl44[ 3SS QDDD10S 3 Hi-Rel PLANAR POWER 5 W PUP FOR DETAILED S P E C I F I C A T I O N S C O N T A C T E N G I N E E R I N G Breakdown Voltages TYPE CASE V 2N3202 2N3203

2N5286

Abstract: 2N3171 2N3172 2N3196 2N3173 2N3174 2N3184 2N3183 2n5601 TO111 package
Contextual Info: u l i J E L E C T R O N I C S , INC. -13 COLLECTOR CURRENT = 5 AMPS PNP TYPES—Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3185 2N318* 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204

BF357

Abstract: BF195 BF594 BF197 BF194 BF194 equivalent BF597 2N4996 BF195 equivalent BC516 equivalent
Contextual Info: Silect High Frequency Transistors TT MHz Sj o < Maximum Ratings Device Type hFE Case outline B V PTOT Ic VCE in brackets CBO ic V V mA mW min. max. mA V 1 10 BF594 (9) 30 20 30 250 65 220 Case Outlines BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38

JAN2N3996

Abstract: 2N4307 ISM22 2n3183
Contextual Info: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100

SDT423

Contextual Info: _ 8 3686 02 SO LITRON D EV IC ES INC_ 95D 02758 SOLITRON DEVICES INC T5 D — T"“- 3 3 - 0 / Ïm F | ù3bflbD2 00D57SA S | T i - t^WÊÊÊFBlË • P L A N A R P O W ER TR A N S IS TO R S % 5m O < M M DEVICE TYPE hpE MIN/MAX @ ic A

2N3017

Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984