2N3998 Search Results

2N3996

Abstract: 2N3997 2N3999 1000C 2N3998
Contextual Info: TECHNICAL DATA 2N3996 JAN, JTX, JTXV 2N3997 JAN, JTX, JTXV 2N3998 JAN, JTX, JTXV 2N3999 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/374 NPN POWER SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

2n3997

Abstract: 2N3996 9012 transistor Transistor 9012 ax 2n3999
Contextual Info: TYPES 2N3996, 2N3997, 2N3998, 2N3999 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS 3D CO H m C < < — rr* 2 rn £ to m m j • 30 W at 100°C Case Temperature ° ¡ z C/3 CO m 7 it -•Io yn 18 m tri n ? O N

2n5385

Abstract: 2N5384
Contextual Info: TYPES 2N5384, 2N5385 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS C £ DESIGNED FOR COMPLEMENTARY USE WITH 2N3996 AND 2N3998 • 30 W at 100°C Case Temperature • Typ t on of 160 ns at 2 A I c

Contextual Info: 2N3998 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3998J • JANTX level (2N3998JX)

TO111

Abstract: 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 PG2265 PG2266 PG2267
Contextual Info: .&^is¿$ A P I — !1 _ _ ^ ELECTRONICS .'. ""” . INC ^ —“ ^*- tm ''’ 00435*15 Id UOOOOOT [ ; 5 AMP 90 VOLT ,3 V 30 WATT •j ! ?lSa NPN Type 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 ‘ PG1250 PG1251 PG1252 PG1253 PG1254 PG1255 PG1256

2N3907

Contextual Info: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028

2N3997

Abstract: 2N3996 2n3996 equivalent transistor 1000C 2N3998 2N3999 2N3997 JAN to-111
Contextual Info: TECHNICAL DATA NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 Devices 2N3996 Qualified Level 2N3997 2N3998 MAXIMUM RATINGS Ratings Symbol Value Unit VCEO VCBO VEBO IB 80 100 8.0 0.5 5.0 10 1 2.0 30 -65 to +200 Vdc Vdc Vdc Adc Max.

2N3996

Abstract: 2n3997 L6228
Contextual Info: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 80V,Planar NPN JANTX, JANTX, JANTX, JANTX, & JANTXV & JANTXV & JANTXV & JANTXV 2N3996 2N3997 2N3998 2N3999 FEATU RES D ESCRIPTIO N • • • • • Unitrode power transistors provide a unique combination of low saturation

2N3998SMD

Contextual Info: 2N3998SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed

2N3996

Abstract: 2N3999 N3998 2N3997 2N3998 UNITRODE TRANSISTORS JANTXV2N3999 2N3997 JAN to-111
Contextual Info: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 80V, Planar NPN JANTX, JANTX, JANTX, JANTX, & JANTXV & JANTXV & JANTXV & JANTXV 2N3996 2N3997 2N3998 2N3999 FEATURES D ESCRIPTION • • • • • U nitrode power tra n sistors provide a u niq u e co m b in ation of low saturation

Contextual Info: 2N3998+JANS Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SDT85502

Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
Contextual Info: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913

Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 3794980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.3A 2N3998 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR •electrical characteristics at 25*C case temperature (unless otherwise noted) PARAMETER UNIT

Contextual Info: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232

Contextual Info: 2N3998+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3998 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3997 JAN to-111

Abstract: 2N4116 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929
Contextual Info: MJæ J E LE C T R O N IC S , INC. [ - t i COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929 2N3996 JAN 2N3996 JTX 2N3996 JTXV 2N3996 2N3997 JAN 2N3997 JTX 2N3997 JTXV 2N3997 2N3998 JAN 2N3998

Contextual Info: 2N3998 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3998J

SPHV402

Abstract: 2N3853
Contextual Info: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232

TO111

Abstract: 2N3850 2N3928 2N43 2N4231 TO-111
Contextual Info: high-rei power transistors 84 SILICON NPN TRANSISTORS 5 Amp BREAKDOWN VOLTAGE TYPE NUMBER CASE SIZE VeB VCE VEB 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232 2N4233 2N4300 2N4913 2N4914 2N4915 2N4998 2N5000

Contextual Info: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232

TIP-561

Abstract: TIP512 tip561 tip558 n538 TIP55 TIP622 TIP5 TIP511 TIP-555
Contextual Info: i Metal Can Power Case Outlines High Reliability P ro fe ssio n i Types continued Device Type ' Polarity Outline Continuous Ic A TIP554 TIP555 TIP556 2N5938 TIP509 TIP511 TIP610 T1P512 2N4913 2N4914 TIP620 TIP625 2N2880 2N5385 2N3996 2N3997 2N3998 2N3999

2N3998

Abstract: 2N3998J 2N3998JV 2N3998JX
Contextual Info: 2N3998 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3998J

Contextual Info: 2N3998+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)