2N2880 Search Results

JANTXV2N3749

Abstract: LM 3041
Contextual Info: P O W F P T R A N Ç R T O P Ç r ; / îw rî !?« Ja n , j a n t x , & j a n t x v 2N2880 JAN- JANTX, & JANTXV 2N3749 5 Amp, 80V, Planar, NPN FEATURES • Meets MIL-S-19500/315 • Collector-Base Voltage: 110V • Fast Switching: tr t, = 300nSec max • Low Saturation Voltage: 0.25V max @ 1A

2N5415

Contextual Info: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420

TO111

Abstract: 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 PG2265 PG2266 PG2267
Contextual Info: .&^is¿$ A P I — !1 _ _ ^ ELECTRONICS .'. ""” . INC ^ —“ ^*- tm ''’ 00435*15 Id UOOOOOT [ ; 5 AMP 90 VOLT ,3 V 30 WATT •j ! ?lSa NPN Type 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 ‘ PG1250 PG1251 PG1252 PG1253 PG1254 PG1255 PG1256

2N2880-220M

Abstract: UA80
Contextual Info: 2N2880-220M MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 FEATURES 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 NPN POWER SILICON TRANSISTOR FOR HI–REL APPLICATIONS • HERMETICALLY SEALED TO–220 METAL PACKAGE 1 2 3 • ALL LEADS ISOLATED FROM CASE

2N3017

Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984

2N4116

Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309
Contextual Info: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850

2N5251

Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421
Contextual Info: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX

2N3749

Abstract: JANTXV 2N2880 equivalent 1000C 2N2880
Contextual Info: TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315 Devices Qualified Level 2N2880 JAN JANTX JANTXV 2N3749 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

JANTXV 2N2880 equivalent

Abstract: 2N2880
Contextual Info: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N2880 APPLICATIONS: • • Fast Switching High Frequency Switching and Amplifying FEATURES: • • High Reliability Greater Gain Stability 5 Amp, 80V, Planar, NPN

472 M

Abstract: MIL-S-19500 2N3055 JANTX
Contextual Info: Summary List of API Q.P.L. Directory Types 2N2812 - JAN, JAN-TX, JAN-TXV 2N2814 - JAN, JAN-TX, JAN-TXV M IL-S-19500/415 MIL-S-19500/415 2N2880 - JAN. JAN-TX, JAN-TXV 2N3749 - JAN. JAN-TX, JAN-TXV M IL-S-19500/315 MIL-S-19500/315 2N3055 - JAN. JAN-TX, JAN-TXV

Contextual Info: 2N2880JAN Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)110 I(C) Max. (A)10 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)400n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3749

Abstract: JANTXV 2N2880 equivalent 1000C 2N2880 JANTXV2N3749
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315 Devices Qualified Level 2N2880 JAN JANTX JANTXV 2N3749 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

Contextual Info: 2N2880+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N2880

Abstract: 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749
Contextual Info: Device Type 2N2658 2N2658 2N2814 2N2880 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N5004 2N5005 2N5038 2N5074 2N5153 2N5539 2N5672 2N6307 SDT3229 SDT55907 SDT55907 Control Drawing 5203/02505B 5203/02506B 5203/031B 5203/02503B 5203/02501B 5203/02502B 5203/00301B

SDT85502

Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
Contextual Info: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913

Contextual Info: MICROSEMI CORP/ ÙIATERTOÙJN SDE D POWER TRANSISTORS tîBM7clt33 0 0 1 E 4 7 3 BbT M U N I T JAN, JANTX, & JANTXV 2N2880 JAN, JANTX, & JANTXV 2N3749 5 Amp, 80V, Planar, NPN T-33-09 FEATU RES • Meeis MIL-S-19500/315 • Collector-Base Voltages HOV • Fast Switching; tfr t, = 300nSec max

Contextual Info: 2N2880 Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated at 5 amps and is military qualified up to a JANTXV level. This TO-59 isolated package features a 180 degree lead orientation.

Contextual Info: 8134693 SEMICOA MO DÉ 5 1 3 ^ 3 QDDOIEb 3 -Q\ NPN SILICON POWER TRANSISTORS Cont’d) Maximum Ratings Device Dissipation Type No. @ 25°C NPN (Case) Watts 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337 2N1617 2N4897 2N4150 2N5152

2H2904

Abstract: 2NI483-86
Contextual Info: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879

Contextual Info: 2N2880-220M MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 FEATURES 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 PNP POWER SILICON TRANSISTOR FOR HI–REL APPLICATIONS • HERMETICALLY SEALED TO–220 METAL PACKAGE 1 2 3 • ALL LEADS ISOLATED FROM CASE

Contextual Info: 2N2880 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated at 5 amps and is military qualified up to a JANTXV level. This TO-59 isolated package features a 180 degree lead orientation.

TIP-561

Abstract: TIP512 tip561 tip558 n538 TIP55 TIP622 TIP5 TIP511 TIP-555
Contextual Info: i Metal Can Power Case Outlines High Reliability P ro fe ssio n i Types continued Device Type ' Polarity Outline Continuous Ic A TIP554 TIP555 TIP556 2N5938 TIP509 TIP511 TIP610 T1P512 2N4913 2N4914 TIP620 TIP625 2N2880 2N5385 2N3996 2N3997 2N3998 2N3999

Contextual Info: 2N2880 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

TO111

Abstract: PG1264 PG2250 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 PG2265
Contextual Info: .&^is¿$ A P I — !1 _ _ ^ ELECTRONICS .'. ""” . INC ^ —“ ^*- tm ''’ 00435*15 Id UOOOOOT [ ; 5 AMP 90 VOLT ,3 V 30 WATT •j ! ?lSa NPN Type 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 ‘ PG1250 PG1251 PG1252 PG1253 PG1254 PG1255 PG1256