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    2N5210 Price and Stock

    Central Semiconductor Corp 2N5210-PBFREE

    TRANS NPN 50V 0.05A TO92-3
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    DigiKey 2N5210-PBFREE Bulk 3,570 1
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    • 10000 $0.17581
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    Rochester Electronics LLC 2N5210

    2N5210 - SMALL SIGNAL BIPOLAR TR
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    onsemi 2N5210BU

    TRANS NPN 50V 0.1A TO-92
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    EBV Elektronik 2N5210BU 8 Weeks 10,000
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    Rochester Electronics LLC 2N5210TF

    TRANS NPN 50V 0.1A TO92-3
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    DigiKey 2N5210TF Bulk 11,539
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    onsemi 2N5210TF

    TRANS NPN 50V 0.1A TO92-3
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    2N5210 Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5210 Central Semiconductor Small Signal Transistors TO-92 Case (Continued) Original PDF
    2N5210 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 50MA TO-92 Original PDF
    2N5210 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    2N5210 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    2N5210 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    2N5210 On Semiconductor Amplifier Transistor Original PDF
    2N5210 Allegro MicroSystems General Purpose Bipolar Transistor, NPN, 50 MinV, TO-92, 3-Pin Scan PDF
    2N5210 Central Semiconductor NPN EPOXY - LOW NOISE LEVEL AMPLIFIER / NPN EPOXY - RF/IF OSCILLATOR Scan PDF
    2N5210 Central Semiconductor Low Noise Level Amp / Oscillator / Switching Transistors Scan PDF
    2N5210 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N5210 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N5210 Fairchild Semiconductor NPN General Purpose Amplifier Scan PDF
    2N5210 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5210 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N5210 Ferranti Semiconductors E-Line Transistors 1977 Scan PDF
    2N5210 Micro Electronics NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS Scan PDF
    2N5210 Micro Electronics Low Level and General Purpose Amplifiers Scan PDF
    2N5210 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N5210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5210 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    2N5210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5210

    Abstract: transistor 2N5210 2N5209
    Text: MOTOROLA Order this document by 2N5209/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5209 2N5210 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage


    Original     		PDF 2N5209/D 2N5209 2N5210 226AA) 2N5209/D* 2N5210 transistor 2N5210 2N5209

    2N5210

    Abstract: No abstract text available
    Text: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5210/MMBT5210 OT-23 2N5210 O-92-3 2N5210BU 2N5210NMBU 2N5210TA 2N5210TAR 2N5210TF

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE


    Original     		PDF BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961

    2N5210

    Abstract: MMBT5210 2n5210 equivalent
    Text: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5210/MMBT5210 OT-23 2N5210 MMBT5210 2n5210 equivalent

    transistor 2N5210

    Abstract: 2N5209 2N5210
    Text: DATA SHEET 2N5209 2N5210 NPN SILICON TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5209 and 2N5210 are silicon NPN Transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. MAXIMUM RATINGS TA=25°C


    Original     		PDF 2N5209 2N5210 2N5209 2N5210 transistor 2N5210

    2N5210

    Abstract: 2N5088 2N5210 c 2n5088 national
    Text: N 2N5210 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings*


    Original     		PDF 2N5210 2N5088 2N5210 2N5210 c 2n5088 national

    Untitled

    Abstract: No abstract text available
    Text: 2N5210 2N5210 C B TO-92 E NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings*


    Original     		PDF 2N5210 2N5088

    MMBT5210

    Abstract: 3CTE
    Text: 2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5210/MMBT5210 OT-23 2N5210TA 2N5210BU 2N5210 O-92-3 MMBT5210 3CTE

    2n5210 equivalent

    Abstract: 2N5210 CBVK741B019 F63TNR PN2222N
    Text: 2N5210 2N5210 C B TO-92 E NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF 2N5210 2n5210 equivalent 2N5210 CBVK741B019 F63TNR PN2222N

    2N5088 equivalent

    Abstract: 2n5088 transistor transistor 2N5210 2N5210 2N5088
    Text: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF 2N5210 625mW 2N5088 100MHz Width300s, 2N5088 equivalent 2n5088 transistor transistor 2N5210 2N5210

    2n5210 equivalent

    Abstract: replacement 2N5210 BC237 transistor BC107 specifications
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5209 2N5210 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage VCBO 50 Vdc Emitter – Base Voltage


    Original     		PDF 2N5209 2N5210 226AA) U218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2n5210 equivalent replacement 2N5210 BC237 transistor BC107 specifications

    Untitled

    Abstract: No abstract text available
    Text: 2N5210 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)620m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N5210 Freq30M

    2SA564A-P

    Abstract: 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2N5138 2SA1715 2SC372
    Text: TYPE NO. H M A X IM U M R A TIN G S CASE Pd mW 'c Im A) V CEO (V) min FE V CE(SAT) max •c lm A | V CE (V) max (V) 'c Im A I fT min (MHz) Cob N.F. max max (pF) (dB) _ 2N5138 2N 5172 2N5209 2N5210 2N5219 P IM N N N TO -IO 6 TO-92B T O -92A TO-92A TO -92A


    OCR Scan     		PDF 2N5138 2N5172 O-92B 2N5209 O-92A 2N5210 2N5219 2IM5223 2SA564A-P 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2SA1715 2SC372

    Untitled

    Abstract: No abstract text available
    Text: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2N5210 625mW 2N5088 100/iA, 100KHZ 20/iA 22KSJ

    Untitled

    Abstract: No abstract text available
    Text: S3 S£ M 'C IC IM O , , n T a n 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.


    OCR Scan     		PDF 2N5210 2N5088

    2N5088

    Abstract: 2N5210
    Text: S E F ^ ^ C N D ; -E T ^ a rî 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1^A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.


    OCR Scan     		PDF 2N5210 2N5088 2N5210

    Untitled

    Abstract: No abstract text available
    Text: TO-92 PLASTIC PACKAGE TRANSISTORS NPN Electrical Characteristics M axim um R a tin gs Typ« No. 2NS209 VEBO 'c s o (V) (V) Mn Mn Min (UA) Max 50 50 5 0.050 35 Min 50 50 5 0.050 35 'c & VCE (mA) (V) Max 150 10.00 5.0 150 1.00 5.0 0.10 5.0 100 2N5210 @


    OCR Scan     		PDF 2NS209 2N5232A O-92-1 2SC3114U BC182 BC182A 2N3693 O-92-4

    2n5088 transistor

    Abstract: transistor 473 100khz 5v transistor 2N5088 2N5210
    Text: NPN EPITAXIAL SILICON TRANSISTOR 2N5210 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2N5210 625mW 2N5088 100KHZ 20MHz 20fiA 10Kfi 2n5088 transistor transistor 473 100khz 5v transistor 2N5210

    2N5210 national

    Abstract: No abstract text available
    Text: 2N5210 í» Discrete POW ER & Signal Technologies National Semiconductor 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.


    OCR Scan     		PDF 2N5210 2N5088 2N5210 national

    LS 5087

    Abstract: a5t5086
    Text: TYPES 2N5086. 2N5087, A5T5086, A5T5087 P-N P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 2 Î. M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-LEVEL, LOW-NOISE AUDIO AMPLIFIER APPLICATIONS • For Complementary Use with N-P-N Types 2N5209, 2N5210, A5T5209, A5T5210


    OCR Scan     		PDF 2N5086. 2N5087, A5T5086, A5T5087 2N5209, 2N5210, A5T5209, A5T5210 100-mil LS 5087 a5t5086

    Untitled

    Abstract: No abstract text available
    Text: 2N5209 • 2N5210 NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS 1 CASE TO-92A THE 2N5209, 2N5210 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP LOW NOISE PREAMPLIFIERS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N5086, 2N5087- '0 EBC ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 2N5209 2N5210 O-92A 2N5209, 2N5210 2N5086, 2N5087- 350mW BOX69477 2N5209

    2N5769

    Abstract: 2N5219 2N5225 2N5172 2N5209 2N5210 2N5220 2N5224 2N5232 2N5232A
    Text: TO-92 Plastic Package Transistors NPN Maxinnum R atings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) *c Po (W) (A) @Tc=25” ^C BO ^CEO ^EBO (V) Min (V) Min (V) Min 2N5172 25 25 5 0.4 2N5209 50 50 5 0.625 0.0. 2N5210 50 50 5


    OCR Scan     		PDF 2N5172 O-92-1 2N5209 2N5210 2N5219 2N5830 2N6427 2N6515 2N6516 2N5769 2N5225 2N5220 2N5224 2N5232 2N5232A

    2N5210

    Abstract: 2N5086 2N5087 2N5209 2N5210 c 2N 5209 ebc
    Text: 2N5209 • 2 N 5210 NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS 1 CASE TO-92A THE 2N5209, 2N5210 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AP LOW NOISE PREAMPLIFIERS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N5086, 2N5087. EBC ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 2N5209 2N5210 2N5209, 2N5086, 2N5087. T0-92A 550mW IC-10mA 10Hz-15KHz 2N5086 2N5087 2N5209 2N5210 c 2N 5209 ebc

    2N5210A

    Abstract: a5t5209 52-10A ic 5209 2N5209
    Text: TYPES 2N5209, 2N5210, A5T5209, A5T5210 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 1 1 9 2 2 , J U N E 1 9 7 3 S ILE C T t T R A N SISTO R S* FOR LO W -LEVEL, LOW-NOISE A U D IO A M P L IF IE R A PPLICATIO N S • For Complementary Use with P-N-P Types 2N 5086, 2IM5087, A 5T 5086, A 5T5087


    OCR Scan     		PDF 2N5209, 2N5210, A5T5209, A5T5210 2IM5087, 5T5087 100-mil 2N5210A a5t5209 52-10A ic 5209 2N5209