MPSA18 Search Results

MPSA18

Abstract: MPSA18 equivalent
Contextual Info: MPSA18* MAXIM UM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 45 Vdc Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage CASE 29-04, STYLE 1 TO-92 TO-226AA Ve b O 6.5 Vdc Collector Current — Continuous 'C 200 mAdc Total Device Dissipation @ Ta = 25°C

MPSA18

Abstract: 2n5088 transistor MPSA18C 2N5088 MPSA18 Fairchild
Contextual Info: MPSA18 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1µ A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted

transistor motorola 2n3053

Abstract: Transistor BC107 motorola transistor equivalent 2n5551 symbol transistor BC108 transistor equivalent book 2N5401 BC107 Transistor application notes 2N2904 transistor TO92 Transistor BC107b motorola MOTOROLA 2n2102 TRANSISTOR TRANSISTOR BC107B die
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor MPSA18 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 45 Vdc Collector – Base Voltage VCBO 45

MPSA18RLRAG

Abstract: MPSA18RLRMG MPSA18G k mps 850 B MPSA18 mpsa18 equivalent mps a18
Contextual Info: MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 45 Vdc Emitter −Base Voltage

MPSA18

Abstract: MPSA18 equivalent
Contextual Info: MOTOROLA Order this document by MPSA18/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor NPN Silicon MPSA18 Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 45 Vdc Collector – Base Voltage

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

Contextual Info: ON Semiconductort MPSA18 Low Noise Transistor NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 45 Vdc Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 6.5 Vdc Collector Current — Continuous

mpsa18 equivalent

Abstract: mpsa18
Contextual Info: ON Semiconductort MPSA18 Low Noise Transistor NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 45 Vdc Collector–Base Voltage VCBO 45 Vdc Emitter–Base Voltage VEBO 6.5 Vdc Collector Current — Continuous

mpsa18

Contextual Info: D iscrete P O W ER & S ig n a l Technologies É ^m N a t i o n a l Sem iconductor V Device No. MPSA18 LhL BShOhOO DETTOSI I Case Style TO-92 92 NPN Low Level Amplifiers CBO VCEO ^EBO (V) Min (V) (V) Min Min 45 45 6.5 'cBO V CB 'c & V CE hFE @ Min Max (mA)

Contextual Info: S E M IC O N D U C T O R MPSA18 NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1 j, A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. AbSOlUtG Maximum RâtinÇjS

Contextual Info: ON Semiconductort MPSA18 Low Noise Transistor NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 45 Vdc Collector−Base Voltage VCBO 45 Vdc Emitter−Base Voltage VEBO 6.5 Vdc Collector Current — Continuous

2N5088

Abstract: MPSA18
Contextual Info: SEMiCONDUCTQR MPSA18 NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1 ^ A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted

MPSA18

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor NPN Silicon MPSA18 Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Sym b ol Value U nit C ollecto r- Emitter Voltage VCEO 45 Vdc C ollector-B ase Voltage VCBO 45 Vdc E m itter-Base Voltage

MPSA18

Abstract: MPS-A18 mpsa18 50v
Contextual Info: MPSA18 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA18 is a small signal, low noise NPN silicon transistor designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C

Contextual Info: D iscrete POWER & S ig n a l Technologies F = A IR C H IL .O SEMICONDUCTOR MPSA18 NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1p A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

Contextual Info: MPSA18* M A X IM U M RATINGS Rating Symbol Value Unit C o lle c to r -E m it t e r V o lt a g e v CEO 45 Vdc C o lle c t o r -B a s e V o lt a g e v CBO 45 Vdc E m it te r - B a se V o lt a g e CASE 29-04, STYLE 1 TO-92 TO-226AA v EBO 6.5 Vdc C o lle c to r C u r r e n t — C o n t in u o u s

Contextual Info: MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 45 Vdc Emitter −Base Voltage

MPSA18 y equivalent

Abstract: MPSA18 MPSA18RLRAG MPSA18RLRMG MPSA18G MPSA18 equivalent mps a18 MPSA18RLRA MPSA18RLRM MPSA18RLRP
Contextual Info: MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 45 Vdc Emitter −Base Voltage

MPSA18

Abstract: PN2484 2N5210 national 2N5088 2N5089 2N5210 2N5961 2N5962
Contextual Info: This I Material cr aIn Copyrighted a aa .rr ÜJ a xtn Cb » % /^ Device No. MPSA18 -a -v j •nJ By Its I National S e m Case Style TO-92 92 i c o n V CBO VCE0 ^EBO (V) Min (V) Min (V) Min 45 45 6.5 d u c t o 'cBO <"A) « Max 50 V m 30 400 500 500 500 ' '

TO226AA

Abstract: 226AA
Contextual Info: Bipolar Transistors Low Noise and Good hFE Linearity NPN − BC550C PNP V BR CEO IC mA Max Min Max hFE fT MHz Min NF dB Max 2N5087 50 50 250 800 40 2.0 BC560C 45 100 380 800 250 (Typ) 2.5 MPSA18 − 45 200 500 − 100 1.5 2N5088 − 30 50 350 − 50 3.0 2N5089

mpsa18

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor NPN Silicon MPSA18 Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 45 Vdc C ollector-B ase Voltage VCBO 45 Vdc E m itte r-B a se Voltage

MPSA18

Abstract: 2N5088 CBVK741B019 F63TNR PN2222N MPSA18C MPSA18 Fairchild
Contextual Info: MPSA18 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1µ A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

mpsa25c

Abstract: MPS-A12 MPS6576C
Contextual Info: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 0504330 DDQBSbb - 8514019 SPRAGUE. 7 ■ ALGR , ^ 93D 03566 3 ' X ' f l i l ~\£> SEMICONDS / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type