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    2N5810 Search Results

    2N5810 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    2N5810
    		Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF 59.2KB 1
    2N5810
    		Central Semiconductor NPN EPOXY Transistors Scan PDF 301.93KB 3
    2N5810
    		Central Semiconductor NPN Epoxy - Switching and General Purpose Transistors Scan PDF 301.93KB 3
    2N5810
    		General Electric Semiconductor Data Book 1971 Scan PDF 839.65KB 3
    2N5810
    		Micro Electronics SILICON AF MEDIUM POWER TRANSISTOR Scan PDF 167.11KB 2
    2N5810
    		Micro Electronics Semiconductor Device Data Book Scan PDF 70.1KB 1
    2N5810
    		Unknown Basic Transistor and Cross Reference Specification Scan PDF 56.61KB 1
    2N5810
    		Unknown Transistor Shortform Datasheet & Cross References Scan PDF 88.32KB 1
    2N5810
    		Unknown Basic Transistor and Cross Reference Specification Scan PDF 49.69KB 1
    2N5810
    		Unknown Shortform Transistor PDF Datasheet Short Form PDF 163.91KB 1
    2N5810
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 117.33KB 1
    2N5810
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 114.04KB 1
    2N5810
    		Unknown Shortform Transistor Datasheet Guide Short Form PDF 88.71KB 1
    2N5810
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 92.66KB 1
    2N5810
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.85KB 1
    2N5810
    		Semico Medium Power Transistors Scan PDF 1.28MB 12
    2N5810
    		Semico Medium Power Amplifiers and Switches Scan PDF 121.85KB 1
    2N5810
    		Sprague Semiconductor Data Book 1977 Scan PDF 83.98KB 1

    2N5810 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3638

    Abstract: 2N5818 2N5816 2N5815 2N3638A 2N5814 HS5810 2N5822 2N5813 2N5810
    Contextual Info: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE VcEO Pt 5 2 5 °C Ccb hpE hFE @ 2V , 2mA @ 10V, 1MHz M ax. (Pt) fr T yp ica l >MH^ NPN PNP (V) Im W ) (mA) M in. M ax. @ 2V, 500mA M in. 2N5810 2M5811 25 500 750 60 200 45 9 .5 150


    OCR Scan     		500mA 2N5810 2N5811 2N5812 2N5813 2N5814 2M5815 2N5816 2M5817 2N5818 2N3638 2N5815 2N3638A HS5810 2N5822 PDF

    2N5818

    Abstract: 2N5815 2N5814 2N5816 2N5819 2N5810 2N5811 BOX69477
    Contextual Info: ! I/ * • 2N5819 ■ /' 2N5810 • th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F WITH X-67 LEAD PREFORMED HEAT SINK THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.


    OCR Scan     		2N5810 2N5819 2N5819 O-92F 2N5810, 2N5811, 2N5814, 2N5818 2N5815 2N5814 2N5816 2N5811 BOX69477 PDF

    2N5819

    Contextual Info: *I I/ • ¡ 2N5810 2N5819 th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.


    OCR Scan     		2N5810 2N5819 O-92F 2N5810 2N5819 O-92F 2N5811, 2N5810, 2N5814, PDF

    2SC875 E

    Abstract: 2N5816 2SC875 2N5822 2SB504A 2n5813
    Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS Ic ^CEO Pa mW (A) (V) H,'E POLA­ RITY CASE 2N5810 2N5811 2N5812 2N5813 2N5814 N P N P N TO-92F TO-92F TO-92F TO-92F TO-92F 625 625 625 625 625 0.75 0.75 0.75 0.75 0.75 25 25 25 25 40 60 60 150 150 60


    OCR Scan     		2N5810 2N5811 2N5812 2N5813 2N5814 2N5815 2N5816 2N5817 2N5818 2N5819 2SC875 E 2SC875 2N5822 2SB504A PDF

    2N3638 equivalent

    Abstract: 2N2219 transistor substitute 2N3638 transistor 2N5816 2N5815 2N5818 of 2n2905 1N4532 2N5813 hs5810
    Contextual Info: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE Ccb hpE @ 2V, 2mA Pt 5 2 5 °C Im W ) (mA) Min. Max. hFE @ 2V, 500mA Min. @ 10V, 1MHz Max. (Pt) fr Typ ical >MH^ NPN PNP VcEO (V) 2N5810 2M5811 25 500 750 60 200 45 9.5 150 2N5812 2N5813


    OCR Scan     		500mA 2N5810 2N5811 2N5812 2N5813 2N5814 2M5815 2N5816 2M5817 2N5818 2N3638 equivalent 2N2219 transistor substitute 2N3638 transistor 2N5815 of 2n2905 1N4532 hs5810 PDF

    2N5819

    Abstract: TO92F 2N5810 2N5814
    Contextual Info: 2N5810 2N5819 th rou gh COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS 1 CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THEY ARE SUPPLIED IN TO-92F PLASTIC CASE WITH


    OCR Scan     		2N5810 2N5819 O-92F 2N5810, -15rmrt-- 2N5814, 2H5811, TO92F 2N5814 PDF

    BC335

    Abstract: MPS005 CS9013 BC333 BC358 TMPT1009F3 LOW-POWER SILICON NPN 2SC403 2S060 2S0638
    Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 MMBC1009F3 2SC403 2N5810 GES5810 TP5810 2S0638 2S0400 CS9013 2N703 2N3241 ~~~~~~ 15 20 MPS3402 MPS3402 MPS3403 MPS3403 MPS3414 MPS3414 2N3402 2N3414 §E~~414 25 30 35 40 45 50 55 60 TMPT1009F2 2SC371 MPS005


    Original     		MMBC1009F3 2SC403 2N5810 GES5810 TP5810 2S0638 2S0400 CS9013 2N703 2N3241 BC335 MPS005 BC333 BC358 TMPT1009F3 LOW-POWER SILICON NPN 2S060 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N5815

    Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
    Contextual Info: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50


    OCR Scan     		2N4238 2N4235 2N4239 2N4236 2N4314 2N4400 O-92A 2N4402 2N4401 2N5815 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 PDF

    2N5816

    Abstract: 2N5815 2N5225 2N5143 2N5447 2N4969 2N5226 2N5450 2N5818 2N5819
    Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) Cob COM PLE­ max MENTARY TYPE (PF) 2N4953 2N4954 2N4969 2N4970 2N4971 N N N N P TO-92B TO-92B


    OCR Scan     		2N4953 O-92B 2N4954 2N4969 O-106 2N4970 2N4971 2N5816 2N5815 2N5225 2N5143 2N5447 2N5226 2N5450 2N5818 2N5819 PDF

    2N5381

    Abstract: 2N5383 2N5376 IC cbe 2N4401 2N4402 2N4403 2N4410 2N5769 2N4952
    Contextual Info: !J Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE V cB O (V) hFE v CEO V e b O •CBO VCBC (V) (nA) (V) (V) *'CES •TO-92-18R MIN *VCES MIN MIN *ICEV @ VCE @ lc (V) <mA) TO-92-18R V CE(SAT) ® *C c ob (V) <mA) *h ,e (1 kH Z )


    OCR Scan     		O-92-18R O-92-18R 2N4401 2N4402 2N4403 2N4410 2N4424 2N4952 AMPL/250 2N5769 2N5381 2N5383 2N5376 IC cbe PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    2N5381

    Abstract: 2N5383
    Contextual Info: I ! Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE vCBO V e t o * • * (V) (V) m «Ü * VCBC m . . wr ««eg •• c m (n*A) TO-92-18R Cob (mA) *CES TO-92-1W» M i yni MM *6W *r NÉ *off <PF) <MH*} *c rt> TYP MAX MM MAX MAX


    OCR Scan     		O-92-1W» O-92-18R 2N5381 2N5383 PDF

    2N5381

    Abstract: 2N2926 transistors TO-92 case 2N3707
    Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff


    Original     		PDF

    2N5381

    Abstract: 2N5383 2N4401 2N4402 2N4403 2N4410 2N4424 2N4952 2N4953 2N5086
    Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO CODE (V) VCEO VEBO ICBO @ VCB (nA) (V) (V) *ICES (V) *VCES *ICEV hFE @ VCE @ IC *hFE (1kHZ) TO-92-18R VCE (SAT) @ IC Cob (V) (mA) (V) (mA) 500 fT NF toff (pF) (MHz) (dB) *Crb *TYP


    Original     		O-92-18R 2N4401 2N4402 2N4403 2N5772 2N5810 2N5811 2N5381 2N5383 2N4401 2N4402 2N4403 2N4410 2N4424 2N4952 2N4953 2N5086 PDF

    2N6008

    Abstract: 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4


    OCR Scan     		50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N6008 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014 PDF

    d33025

    Abstract: 2N6000 2n3391 2N6006 2N6002 GET3013 GET3014 GET3638 2n2926 GET706
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 d33025 2N6000 2n3391 2N6006 2N6002 GET3014 GET3638 2n2926 PDF

    2N6004

    Abstract: 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015
    Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N6004 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015 PDF

    2N5225

    Abstract: 2N5815 2N5816 2n5814 2N5822 2N5420 2N5042
    Contextual Info: Medium Power Amplifiers and Switches M AXIMUM RATINGS TYPE NO. POLA­ CASE RITY H FE VcE sat VcEO Pd Ic (mW) (A) (V) VcER * min max Ic ^C E max (mA) (V) (V) (A) Ic fT C 0b min max (MHz) (MHz) COMPLE­ MENTARY TYPE 2N5042 2N5220 2N5221 2N5225 2N5226 P N P


    OCR Scan     		2N5042 2N5220 2N5221 2N5225 2N5226 2N5354 2N5355 2N5356 2N5365 2N5366 2N5815 2N5816 2n5814 2N5822 2N5420 PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    2n5963

    Contextual Info: I Sm all Signal Transistors TO-92 Case TO-92 T Y P E NO. F A M IL Y LEA D VcBO v CEO v EBO V (V ) (V ) 'C B O hFE p V CBC v CE @ IC (V ) (m A ) V C E ( S A T ) ® !C C 0b »T NF to ff CODE (V ) (V ) (m A ) *< CES *VC E S 2N2712 NPN A M PU SW ITCH ECB


    OCR Scan     		2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3392 2N3393 2N3395 2N3396 2n5963 PDF

    D29A5

    Abstract: 2N5381 transistor 3405 npn 2N5383 D29A4 2N4425 2N2713 2N5380 2N5368 2N5371
    Contextual Info: SPRAGUE Econoline P la stic -M o ld e d Silicon SEPT" Transistors Type No. P O L A R IT Y GENERAL-PURPOSE AMPLIFIERS/SWITCHES D -C C U R R E N T G A IN h FE PD Ta = 25 C (mW) V (BR) CBO V olts V (BR) CEO Vo lts V (BR) EBO Vo lts ICBO mA Cond tions Max. lc


    OCR Scan     		2N5368 2N5370 2N5371 2N5372 2N5373 2N4954 2N5418 2N5419 D29A4 D29A5 2N5381 transistor 3405 npn 2N5383 2N4425 2N2713 2N5380 PDF

    2N3565

    Abstract: 2N5137 2N5381 2N5136 2N5172 2N4967 2N3565 to-106 2N5371 2N4275 2N5220
    Contextual Info: 0000211 a h l 1989963 CENTRAL SEMICONDUCTOR 61C 0 0 21 1 T -J L s V / NPN EPOXY - SWITCHING AND GENERAL PURPOSE Cont'd. Ul o > V min max mA V 20 20 25 15 15 3 3 5 3 3 20 20 100 35 30 400 400 500 350 600 150 150 10 2 50 1 1 10 10 10 .25 .25 .25 0.4 0.5 15


    OCR Scan     		2N5136- O-105 2N5137 O-106 2N5172 2N5219 2N5220 2NS223 2N5225 2N5368 2N3565 2N5381 2N5136 2N4967 2N3565 to-106 2N5371 2N4275 PDF