2N4410 Search Results

2N4410

Abstract: 1N914 transistor 2N4410
Contextual Info: ON Semiconductort Amplifier Transistor 2N4410 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 250 mAdc

Contextual Info: SEMICaNOUCTOR yM 2N4410 TO-92 NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e as g e n e ra l p u rp o s e a m p lifie rs a n d s w itc h e s re q u irin g c o lle c to r c u rre n ts to 50 m A . S o u rce d fro m P roce ss 16. S e e 2N 5551 fo r c h a ra c te ristics.

2N4410

Contextual Info: SEMICONDUCTOR ¡m 2N4410 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and sw itches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. AbSOlUtG Maximum RâtinÇjS

2N4410 Transistor

Abstract: 2N4410 equivalent DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO 120 Vdc Emitter – Base Voltage

2N4410 MOTOROLA

Abstract: 2N4410 motorola 1N914 diode datasheet 1N914 maximum current rating of diodes
Contextual Info: MOTOROLA Order this document by 2N4410/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

Contextual Info: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N4409

Abstract: a5t4409
Contextual Info: TYPES 2N4409, 2N4410, A5T4409, A5T4410 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 7 4 , M A R C H 1 9 7 3 S ILE C T t T R A N S IS T O R S Ï FOR M E D IU M -C U R R E N T A M P L IF IE R APPLICATIO N S • High-Voltage Indicator and Display Control

2N4410

Contextual Info: ON Semiconductort Amplifier Transistor 2N4410 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 250 mAdc

2N4410

Abstract: 2N4410 Transistor 2N5551
Contextual Info: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N4409

Abstract: 2N4410 2N4410 MOTOROLA 2N5550
Contextual Info: MOTORCLA SC XSTRS/R 15E D I F b3b?5S4 00057=10 3 | t - w -z i 2N4409 2N4410 MAXIMUM RATINGS Symbol 2N4409 2N4410 U nit Collector-Emitter Voltage VCEO 50 80 Vdc Collector-Base Voltage VcBO 80 120 Vdc Emitter-Base Voltage Rating Ve b o 5.0 Vdc Collector Current — Continuous

2N4410

Contextual Info: 2N4410 MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r V o lta g e VCEO 80 V dc C o lle c to r-B a s e V o lta g e v CBO 120 V dc E m itte r-B a s e V o lta g e v EBO 5.0 V dc C o lle c to r C u rre n t — C o n tin u o u s ¡c 250 m Adc

2n4410

Contextual Info: SEMICONDUCTOR • 2N4410 . TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum RatinQS

2N4410

Abstract: 2N4410 Transistor Transistor marking code S
Contextual Info: 2N4410 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4410 is a small signal NPN silicon transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

NEC 2SC959

Abstract: BFR39 2SC309 100n AST44 LOW-POWER SILICON NPN 2SC1008A 2SC2274K 2SC3329-BL 2SC959
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number S 10 15 20 25 30 MPS-A06 PMBTAS6 PMBTAS6 FMMT-A06 FMMTA06 MMBTA06 MMBTA06 MMBTA06 MPSA06 PMBTA06 PMBTA06 5MBTA06 BCS3B BFT29 TP58S8 2N585B BFR39 BFR39 BFR39 2S0666 2N4410 BSX21 AST4410 BC447A BC447A BC4BS BC48S-18

2N4410

Contextual Info: ON Semiconductort Amplifier Transistor 2N4410 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 120 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 250 mAdc

Contextual Info: MOTOROLA Order this document by 2N4410/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistor NPN Silicon 2 N 4 4 10 COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage v CEO 80 Vdc C o lle c to r-B a s e Voltage v CBO

2N4410

Abstract: 2N5551 CBVK741B019 F63TNR PN2222N to92 lead code d
Contextual Info: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N5551 CJ

Contextual Info: This I tr Material Ln a b-1 t-1 U a NPN General Purpose Amplifiers and Switches Device No. Case Style ^C B O V CEO Copyrighted V Min (V) Min (V) Min 75 45 6 CD jr PN100 CD TO-92 (92) vEBO (continued) ICES* *CBO (nA) Max 50 V @ CB hFE (V) Min 60 80 100 100

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

GES2222A

Abstract: NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A G E Device b v CEO V C E sa t E Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300

T147

Abstract: 3307r schlumberger 2N4896 2N5220 2N4400 2N4401 2N4402 2N4403 FTS04400
Contextual Info: FAIRCHILD SEMICON DUC TO R fi4 DEj34t.Tt.74 0D27Sfll 1 3469674 FAIRCHILD SEMICONDUCTOR „ IDCHILD i, A Schlumberger Company • • • • • 84D 27581 D mmm 2N4400/FTS04400 ' ' - t r - i i 2N4401/FTS04401 Small Signal General Purpose Amplifiers & Switches

2n5226

Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150