2N6041 Search Results

MIL I 23659

Abstract: 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2n3198 transistor transistor 24405
Contextual Info: Microsemi PNP Transistors TIP42 TIP42A TIP42B TIP42C 2N6666 2N6667 2N6668 2N3171 2N3172 2N3173 2N3174 2N6049 2N3183 2N3195 2N3184 2N3196 2N3185 2N3197 2N3186 2N3198 2N6040 2N6041 2N6042 2N6489 2N6490 2N6491 2N3163 2N3164 2N3165 2N3166 2N3175 2N3187 2N317B

2N6044

Abstract: 2N6045 2N6041 2N6042 transistor YA CM1616 2N6040 2N6043
Contextual Info: central Datasheet 2N6040 2N6043 Sem icondu ctor Corp. 2N6041 2N6042 PNP 2N6044 2N6045 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

Contextual Info: 2N6041 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)2.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.1.0k

2N6045

Abstract: 2N6041 2N6042 N6043 2N6040 2N6045 NPN POWER DARLINGTON 2N6043 2N6044 A-2N6040 N6040
Contextual Info: DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS .designed for general-purpose amplifier and low-speed switching applications FEATURES: Boca Semicondcutor Corp. BSC * Collector-Emitter Sustaining VoltageVCEo(sus) = 60 V (Min) - 2N6040 , 2N6043 = 80 V (Min) - 2N6041 , 2N6044

BDX53D

Abstract: D45VH4 BD807 D44H5 bdw41 BUS36 BD900 BD805 BDX33D D44H8
Contextual Info: Silicijevi transistorji 0,5 A do 15 A Silicon transistors 0.5 A to 15 A Tip/Type NPN 2N6044 TIP101 BDX53B TIP131 BD899 BD899A BDX53C TIP132 BD901 2N6045 TIP102 MJE15028 BDX53D MJE15030 BU807 BU806 MJE13006 Uceo PNP 2N6041 TIP106 BDX54B TIP136 B0900 BD900A

2N6042

Abstract: 2N6041 2N6045 2N6045 NPN POWER DARLINGTON 2N6040 2N6043 2N6044 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: 2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial

BOX34B

Abstract: bot64a BOX54B sgs-ates transistors bot64 B064S MJ0117 BOW94B BOV64 MJ-01
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max TOper Max (8) (8) (Oe) Package Style PNP Darlington TransisLors, (Cont'd) 2N6041 2SBS72A 2SB939A 2SB951A BOX54B B0266A

2N6040

Abstract: 2N6041 2N6042 2N6043 2N6044 2N6045
Contextual Info: ON Semiconductor PNP Plastic Medium-Power Complementary Silicon Transistors 2N6040 2N6042 2N6043 * NPN 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain – hFE = 2500 Typ) @ IC = 4.0 Adc

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

2N6041 MOTOROLA

Abstract: 2N6045 MOTOROLA 2n6042 motorola 2N6043 MOTOROLA 2N6044 MOTOROLA 2N6041 1N5825 2N6040 2N6042 2N6041 application
Contextual Info: MOTOROLA Order this document by 2N6040/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications.

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

2N6042

Abstract: 2N6042 equivalent
Contextual Info: PNP 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* *Preferred Device Plastic Medium−Power Complementary Silicon Transistors . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

MJE1100 MOTOROLA

Abstract: MJE1100 transistor MJE6043 2N6041 MJE1101 MJE1103 transistor MJE1103 mje1102 mje6044 MJE1090
Contextual Info: MOTOROLA SC 34 OIODES/OPTO} 6367255 MOTOROLA SC D lf | b3 t,7B5 5 DIO DES/O PTO 34C O O BT'im 37941 r- 3 3 - 0 / SILICON POWER TRANSISTOR DICE (continued) 2C6045 DIE NO. — NPN LINE SOURCE — PL500.E210 •• D 2C6042 DIE NO. — PNP LINE SOURCE — PL500.E209

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes