2N6044 Search Results

Contextual Info: 2N6044 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6044 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE T0-220AB DIMENSIONS mm min MAXIMUM RATINGS 8.O A le 1e A PEAK inches

2N6044

Abstract: 2N6045 2N6041 2N6042 transistor YA CM1616 2N6040 2N6043
Contextual Info: central Datasheet 2N6040 2N6043 Sem icondu ctor Corp. 2N6041 2N6042 PNP 2N6044 2N6045 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

Contextual Info: 2N6044 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)2.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.1.0k

2N6045

Abstract: 2N6044 2N6043 sa100
Contextual Info: 3875081 G E SOLID STATE~D1 Ô F l 3fl?S0fll QDl75Eb f l T ~ D Darlington Power Transistors ;_ 5 _ File Number .1151 2Ñ6043, 2N6044, 2N6045 TERMINAL DESIGNATIONS 8-Ampere N-P-N Darlington Power Transistors 60-, 80-, 100-Volts, 75 Watts

43G2E71

Abstract: 4410b 2N6044 2N6045
Contextual Info: MARRIS SEMICOND SECTOR SbE T> m 2N6043, 2N6044, 2N6045 43G2E71 GOMOMTl 772 • HAS 7 = 3 '5 File Number 1151 TERMINAL DESIGNATIONS 8-Ampere N-P-N Darlington Power Transistors 60-, 80-, 100-Volts, 75 Watts Gain of 1000 at 4 A 2N6043,2N6044 Gain of 1000 at 3 A (2N6045)

2N6045

Abstract: 2N6041 2N6042 N6043 2N6040 2N6045 NPN POWER DARLINGTON 2N6043 2N6044 A-2N6040 N6040
Contextual Info: DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS .designed for general-purpose amplifier and low-speed switching applications FEATURES: Boca Semicondcutor Corp. BSC * Collector-Emitter Sustaining VoltageVCEo(sus) = 60 V (Min) - 2N6040 , 2N6043 = 80 V (Min) - 2N6041 , 2N6044

BDX53D

Abstract: D45VH4 BD807 D44H5 bdw41 BUS36 BD900 BD805 BDX33D D44H8
Contextual Info: Silicijevi transistorji 0,5 A do 15 A Silicon transistors 0.5 A to 15 A Tip/Type NPN 2N6044 TIP101 BDX53B TIP131 BD899 BD899A BDX53C TIP132 BD901 2N6045 TIP102 MJE15028 BDX53D MJE15030 BU807 BU806 MJE13006 Uceo PNP 2N6041 TIP106 BDX54B TIP136 B0900 BD900A

2N6044

Abstract: 4410b 2N6045
Contextual Info: 2N6043, 2N6044, 2N6045 File Num ber 1151 TERMINAL DESIGNATIONS 8-Ampere N-P-N Darlington Power Transistors 60-, 80-, 100-Volts, 75 Watts Gain of 1000 at 4 A 2N6043, 2N6044 Gain of 1000 at 3 A (2N6045) Features: • Operates from 1C without predriver Applications:

Contextual Info: m 2N6044 \ \ SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6044 Darlington Transistor is Designed for General Purpose Medium Power Amplifier and Switching Applications. PACKAGE STYLE TO-220AB DIMENSIONS mm MAXIMUM RATINGS 120 mA Ib 0JC 10 15.2

2N6042

Abstract: 2N6041 2N6045 2N6045 NPN POWER DARLINGTON 2N6040 2N6043 2N6044 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: 2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial

4410b

Abstract: 2n6043 2N6044 2N6045
Contextual Info: 3875081 G E SOLID ST ATE 01 d F Ï 3Û7SDÔ1 DQlVEEb b T d Darlingion Power Transistors ;_ 5 _ T- J J 5 _ File Number 1151 2N6043, 2N6044, 2N6045 TERMINAL DESIGNATIONS 8-Ampere N-P-N Darlington Power Transistors

2N6043

Abstract: 2N6045 2N6044 2N6045 NPN POWER DARLINGTON 2n6040
Contextual Info: SavantIC Semiconductor Product Specification 2N6043 2N6044 2N6045 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2N6040/6041/6042 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage · APPLICATIONS

2N6044

Abstract: 2N6045 2N6043 2N6043 data sheet 2n6040
Contextual Info: Inchange Semiconductor Product Specification 2N6043 2N6044 2N6045 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type 2N6040/6041/6042 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・ APPLICATIONS

2N6040

Abstract: 2N6041 2N6042 2N6043 2N6044 2N6045
Contextual Info: ON Semiconductor PNP Plastic Medium-Power Complementary Silicon Transistors 2N6040 2N6042 2N6043 * NPN 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain – hFE = 2500 Typ) @ IC = 4.0 Adc

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

2N6041 MOTOROLA

Abstract: 2N6045 MOTOROLA 2n6042 motorola 2N6043 MOTOROLA 2N6044 MOTOROLA 2N6041 1N5825 2N6040 2N6042 2N6041 application
Contextual Info: MOTOROLA Order this document by 2N6040/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications.

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

2N6042

Abstract: 2N6042 equivalent
Contextual Info: PNP 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* *Preferred Device Plastic Medium−Power Complementary Silicon Transistors . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

6AU6

Abstract: 2N6044 2N6045 CP117 2N6043 data sheet 2N6043 2N6301
Contextual Info: PROCESS CP117 Central Power Transistor TM Semiconductor Corp. NPN - Darlington Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 111 X 111 MILS Die Thickness 10 MILS Base Bonding Pad Area 20 X 30 MILS Emitter Bonding Pad Area 20 X 26 MILS Top Side Metalization

MJE1100 MOTOROLA

Abstract: MJE1100 transistor MJE6043 2N6041 MJE1101 MJE1103 transistor MJE1103 mje1102 mje6044 MJE1090
Contextual Info: MOTOROLA SC 34 OIODES/OPTO} 6367255 MOTOROLA SC D lf | b3 t,7B5 5 DIO DES/O PTO 34C O O BT'im 37941 r- 3 3 - 0 / SILICON POWER TRANSISTOR DICE (continued) 2C6045 DIE NO. — NPN LINE SOURCE — PL500.E210 •• D 2C6042 DIE NO. — PNP LINE SOURCE — PL500.E209

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.