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    2N6761 Price and Stock

    Keysight Technologies N6761A

    Modular Power Supplies Precision DC Power Module 50V, 1.5A, 50W
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    Mouser Electronics N6761A 4
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    2N6761 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6761 Fairchild Semiconductor N-Channel Power MOSFETs, 4.5A, 450V/500V Scan PDF
    2N6761 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. Scan PDF
    2N6761 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6761 International Rectifier TO-3 N-Channel HEXFETs Scan PDF
    2N6761 IXYS High Voltage Power MOSFETs Scan PDF
    2N6761 IXYS High Voltage Power MOSFETs Scan PDF
    2N6761 Motorola European Master Selection Guide 1986 Scan PDF
    2N6761 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6761 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6761 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6761 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6761 Unknown FET Data Book Scan PDF
    2N6761 National Semiconductor N-Channel Power MOSFETs Scan PDF
    2N6761 Semelab MOS Transistors Scan PDF
    2N6761 Semiconductor Technology High Voltage MOS Power Field Effect Transistors Scan PDF
    2N6761 Siliconix MOSPOWER Design Data Book 1983 Scan PDF

    2N6761 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


    Original     		PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


    Original     		PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    2N6761

    Abstract: 2N6762 2N6767 2nc762
    Text: 3875081 G E SOLID STATE 01 D e I b ö TSDAI □ D l 0 3 T b S _ I ” T-39-11 Standar O P ower M O S F E T s 2N6761, 2N6762 File N u m b e r 1 5 8 9 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V - 500V iDs on = 1.5 0 and 2.0 fi


    OCR Scan     		PDF T-39-11 2N6761, 2N6762 2N6761 2N6762 3fi75Dfll 2N6767 2nc762

    jfet selector guide

    Abstract: T0-220SM
    Text: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763


    OCR Scan     		PDF 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 jfet selector guide T0-220SM

    IRF449

    Abstract: 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761
    Text: HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER TO-3 Package INTERNATIONAL R ECTIFIER SbE D 4055455 OOlOSbS □ • I«R T - 3 ^ - 0 3 N-CHANNEL Types % V IRF451 IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF423 IRF460 IRF462 IRF450 2N6770 IRF452


    OCR Scan     		PDF IRF451 T0-204AA IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF449 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761

    1N6801

    Abstract: 2N6767 2n6800 2N6755 2N6756 2N6757 2N6758 2N6759 2N676 2N6761
    Text: - 248 - f ft * t Vds or M € tt € i Vdg V 2N6755 IR N 60 2N6756 N 100 IR 2N6757 IR N 150 2N6758 N 200 IR 2N6759 IR N 350 2N6Ï6Û N 400 IR 2N6761 N 450 IR 2N6762 N 500 IR 2K6763 IR N 60 2N6764 IR N 100 2N6765 IR N 150 2N6766 IR N 200 2N6767 IR N 350 2N6768


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-205AF 2N6798 1N6801 2N6767 2n6800 2N6759 2N676 2N6761

    Untitled

    Abstract: No abstract text available
    Text: • 4302571 00S37Eb 253 ■ HAS 2N6761 2N 6762 H a r r is N-Channel Enhancem ent-Mode Power Field-Effect Transistors August 1991 Features Package T Q -20 4 A A BOTTOM VIEW • 4.0A and 4.5A , 4 5 0V - 5 0 0V • rD S on = 2 .0 ft • S O A is P ow er-D issipation Limited


    OCR Scan     		PDF 00S37Eb 2N6761 2N6761 2N6762 25DEh

    Untitled

    Abstract: No abstract text available
    Text: NATL N-Channel Power MOSFETs Continued IRF732 IRF733 MTP5N35 2N6761 2N6762 IRF431 IRF830 IRF831 IRF833 TO-220 (37) TO-220 (37) TO-220 (37) TO-220 (37) TO-2Û4AA (42) TO-2Û4AA (42) TO-2Û4AA (42) TO-2Û4AA (42) T0-204AA (42) TO-2Û4AA (42) TO-220 (37) TO-220


    OCR Scan     		PDF IRF732 IRF733 MTP5N35 MTP5N40 2N6761 2N6762 IRF430 IRF431 IRF432 IRF433

    M2N6761

    Abstract: 2N6761 2N6762 27809
    Text: 3469674 FAIRCHILD SEMICONDUCTOR 54 DE 3 4 b ‘iti74 0 D S 7 Û D S fl 2N6761/2N6762 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V F A IR C H IL D A Schlumberger Company T - 39-11 Power And Discrete Division Description These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF 2N6761/2N6762 T-39-11 2N6762 2N6761 PC0984IF 34bTt M2N6761 27809

    2N6762 JANTX

    Abstract: 2N6762 2N6903 2N6162 2n6800 2N6761 2N6898 2N6904 power mosfets to 204aa 2N6898 JANTXV
    Text: Standard Power M OSFETs File Number 1589 2N6761, 2N6762 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V - 500V rD s on = 1.5 f i and 2.0 O o Q Features: • ■ ■ ■ ■ SOA is power-dissipation lim ited Nanosecond sw itching speeds


    OCR Scan     		PDF 2N6761, 2N6762 2N6761 2N6762 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6762 JANTX 2N6903 2N6162 2N6898 2N6904 power mosfets to 204aa 2N6898 JANTXV

    1N7001

    Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
    Text: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90

    TDA 3780

    Abstract: 2N6762 2N6761
    Text: Standard Power M OSFETs 2N6761, 2N6762 File Number 1589 N-Channel Enhancement-Mode Power Field-Effect Transistors o 4.0A and 4.5A, 450V - 500V rD s on = 1.5 f i and 2.0 O Q Features: • SOA is po w e r-d issip ation lim ite d ■ N anosecond sw itc h in g speeds


    OCR Scan     		PDF 2N6761, 2N6762 2N6761 2N6762 I2N6761) 2N6762) TDA 3780

    2N7003

    Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
    Text: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-254AA 2N7003 2N7009 2N7011 2N7073 G50-12C1 2N6759

    ulw diode

    Abstract: No abstract text available
    Text: UNITRODE CÔRP 9347963 TE UN I T R O D E CORP 92D POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel dË I cî347Tb3 D O l Q SC m 10504 2N6761 J, JTX, JTXV 2N6762 T ^ 3 < î ~ / | FEATURES • Fast Sw itching • Low Drive C urrent DESCRIPTION The Unitrode pow er M OSFET design utilizes the m ost advanced technology available.


    OCR Scan     		PDF 347Tb3 2N6761 2N6762 ulw diode

    1N7001

    Abstract: 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 IXTP4N90
    Text: - M. A %¿ £ tt t Vd s or * Vd g h V € £ të (Ta=25^C) Vg s (V) Ig s s Pd Id * /CH * /CH (A) (W) % 1 CnA) V g s th) Id s s Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) gfs Ciss Coss Crss <*typ) (max) (pF) (*typ)


    OCR Scan     		PDF XTP4N80 O-220 IXTP4N80A IXTP4N90 T0-204AA 2N6659 O-205AF 2N6660 1N7001 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211

    2N5158

    Abstract: 2N5159 2N5184 2n6152 2N6164 CDBCB450KCAY70 2N6757 2N6758 2N676 2N6762
    Text: - ; £ H £ }± Vd s or € * Vd g % V Vg s m (ÌR=2bV) ID fi*J sé Id s : Fd Vg s th) Ciss I d (oíi ) Vd s = Coss Crss * /CH * /CH (A) (Vf) (max) (nA) Vg s (V) ( M A) (max) m ax Vd s (V) (V) (V) # B til % V g s -O Vg s (V) Id ♦typ (mA) (0) Vg s (V) ♦typ


    OCR Scan     		PDF 2N6757 O-204AA 2N6758 2N675S 2N6791 O-205AF 2N6792 2N6793 2N5158 2N5159 2N5184 2n6152 2N6164 CDBCB450KCAY70 2N676 2N6762

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    2N6761

    Abstract: No abstract text available
    Text: 2N 6761 2N6762 23 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Pa ckage T O -2 0 4 A A * 4.0A and 4.5A, 450V - 500V B O T T O M V IE W * rDS on = 1-5fî and 2.o n DRAIN f (FLANGE) SO U R C E * S O A is Power-Dissipation Limited


    OCR Scan     		PDF 2N6762 2N6761 2N6761.

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan     		PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    2n6152

    Abstract: 2N5159 2N5184 2N6164 2N6755 2N6756 2N6757 2N6758 2N6759 2N676
    Text: - 248 M - € tt f f t t Vd s or € i * £ Vg s ÍS T a= 2 5 '0 * /CH Vd g a s. 1 GSS Pd Id Vg s t h 1 DSS max * /CH ft % 4# fe (13=25*0 I d (o n ) Vd s = Vg s C iss Coss C rss (*typ) (max) (pF) (*typ) (max) (pF) (*typ) (max) (pF) ft & m n Vg s =0 (max)


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 2N5159 2N5184 2N6164 2N6759 2N676

    2N6761

    Abstract: UNITRODE TRANSISTORS SA-A
    Text: POWER MOSFET TRANSISTORS AJTX JTXV 500 Volt, 1.5 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching


    OCR Scan     		PDF MIL-S-19500/542A 2N6761 UNITRODE TRANSISTORS SA-A