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    2N6826 Search Results

    2N6826 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6826 Motorola Switchmode Datasheet Scan PDF
    2N6826 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6826 Unknown FET Data Book Scan PDF

    2N6826 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


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    PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    2N6826

    Abstract: AN569 motorola mosfet
    Text: MOTOROLA SC X S T R S /R F IME D I t 3 b ? 2 S 4 OQß'U.l'i 5 | MOTOROLA • I 7 - 3 T -3 SEMICONDUCTOR TECHNICAL DATA 2N6826 Designer's Data Sheet P o w e r Field E ffe c t T ra n sis to r N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 6 AMPERES


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    PDF L3L72S4 2N6826 O-204AA 0L43O8SC AN569 motorola mosfet

    2n6152

    Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
    Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id


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    PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90

    1N7001

    Abstract: 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 IXTP4N90
    Text: - M. A %¿ £ tt t Vd s or * Vd g h V € £ të (Ta=25^C) Vg s (V) Ig s s Pd Id * /CH * /CH (A) (W) % 1 CnA) V g s th) Id s s Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) gfs Ciss Coss Crss <*typ) (max) (pF) (*typ)


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    PDF XTP4N80 O-220 IXTP4N80A IXTP4N90 T0-204AA 2N6659 O-205AF 2N6660 1N7001 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


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    PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


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    PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


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    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    1N7001

    Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
    Text: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR


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    PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90

    1N7001

    Abstract: 1N7000 IXTP4N90 2N6660 2N6661 2N6755 IXTP4N80A IXTP7N45 IXTP7N45A IXTP7N50
    Text: 271 - - M. % ¿ £ tt t Vd s or * Vdg h V € A £ të (Ta=25^C) Vg s (V) Id I gss Pd * /CH * /CH (A) (W) % 1 CnA) V g s th) I dss Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) (Ta=25tD) gfs Ciss Coss Crss <*typ) (max)


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    PDF XTP4N80 O-220 IXTP4N80A IXTP4N90 T0-204AA BUP61 O-204AA BUP62 1N7001 1N7000 2N6660 2N6661 2N6755 IXTP7N45 IXTP7N45A IXTP7N50

    2N7003

    Abstract: 1N7001 2N7009 1N7000 2N7011 2N7073 2N7005 IXTP4N90 IXTP4N90A 2N6660
    Text: 271 - - M. A %¿ £ tt t Vd s or * V dg € h V £ të (Ta=25^C) Vg s Pd Id (V) I gss V g s th) I dss min * /CH * /CH (W) (A) % 1 CnA) Vg s (V) (m a Vd s (V) ) Vd s = Vg s max Id (mA) (V) (V) Ö-) '14 F D s( o n ) b(on) (Ta=25tD) gfs Ciss Coss Crss <*typ)


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    PDF XTP4N80 O-220 IXTP4N80A IXTP4N90 O-254AA 2N7077 2N7003 1N7001 2N7009 1N7000 2N7011 2N7073 2N7005 IXTP4N90A 2N6660

    1N7000

    Abstract: 1N7001 15 KW motor 1N6660 1N6784 IXTP4N90A IXTP7N50A 2N6660 2N6661 2N6755
    Text: 271 - - M. %¿ £ tt t Vd s or * Vdg € h A V £ të (Ta=25^C) Vg s Pd Id (V) I gss V g s th) I dss min * /CH * /CH (W) (A) % 1 CnA) Vg s (V) (m a Vd s (V) ) Vd s = Vg s max Id (mA) (V) (V) Ö-) '14 F D s (o n ) b(on) (Ta=25tD) gfs Ciss Coss Crss <*typ)


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    PDF XTP4N80 O-220 IXTP4N80A IXTP4N90 CASE79-05 2N6784 2N6788 1N7000 1N7001 15 KW motor 1N6660 1N6784 IXTP4N90A IXTP7N50A 2N6660 2N6661 2N6755

    2N6826

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N 6826 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 6 AMPERES These TM O S P o w e r FETs are desig n ed fo r h ig h voltage, h ig h speed p o w e r s w itc h in g a p p lica tio n s such as s w itc h in g re g u la ­


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    PDF Y145M. 204AA TQ-204AA 2N6826