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    2N679 Search Results

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    2N679 Price and Stock

    Rochester Electronics LLC 2N6792

    N-CHANNEL POWER MOSFET
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    DigiKey 2N6792 Bulk 10,903 201
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    Rochester Electronics LLC 2N6792TX

    2A, 400V, 1.8OHM, N-CHANNEL
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    DigiKey 2N6792TX Bulk 335 38
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    Microchip Technology Inc 2N6798

    MOSFET N-CH 200V 5.5A TO39
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    Microchip Technology Inc 2N6796U

    MOSFET N-CH 100V 8A 18ULCC
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    Microchip Technology Inc JAN2N6796

    MOSFET N-CH 100V 8A TO39
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    2N679 Datasheets (160)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    2N679
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 79.98KB 1
    2N679
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 83.31KB 1
    2N679
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 154.11KB 1
    2N679
    Unknown GE Transistor Specifications Scan PDF 39.5KB 1
    2N679
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 151.88KB 1
    2N679
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.24KB 1
    2N679
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 93.04KB 1
    2N679
    Unknown Vintage Transistor Datasheets Scan PDF 53.7KB 1
    2N679
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 92.2KB 1
    2N6790
    Fairchild Semiconductor 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Original PDF 83.1KB 7
    2N6790
    International Rectifier HEXFET TRANSISTORS Original PDF 135KB 7
    2N6790
    Intersil TRANS MOSFET N-CH 200V 3.5A 3TO-205AF Original PDF 53.46KB 7
    2N6790
    Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V TO-205AF Original PDF 7
    2N6790
    Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF 12.94KB 1
    2N6790
    Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 231.69KB 6
    2N6790
    International Rectifier TO-39 Package N-Channel HEXFET Scan PDF 102.24KB 1
    2N6790
    International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF 44.22KB 1
    2N6790
    Motorola Switchmode Datasheet Scan PDF 41.76KB 1
    2N6790
    Motorola European Master Selection Guide 1986 Scan PDF 59.59KB 1
    2N6790
    Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF 638.03KB 19
    ...

    2N679 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N6796U

    Abstract: 2N6796
    Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


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    MIL-PRF-19500/557 2N6796 2N6796U 10Vdc, 30Vdc T4-LDS-0047 2N6796U 2N6796 PDF

    2N6796

    Abstract: TB334
    Contextual Info: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor


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    2N6796 2N6796 O-205AF TB334 PDF

    2N6790

    Abstract: TB334
    Contextual Info: 2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching


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    2N6790 2N6790 O-205AF TB334 PDF

    Contextual Info: 2N6796 MECHANICAL DATA Dimensions in mm inches TMOS FET ENHANCEMENT N - CHANNEL 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 100V 5.08 (0.200)


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    2N6796 O-205AF) PDF

    lts 542

    Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
    Contextual Info: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds


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    2N6790 92cs-3374i 2N6790 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF lts 542 LTS 543 LTS 542 INTERNAL DIAGRAM 2N6756 LH0063 QPL-19500 TRANSISTOR C 557 B PDF

    2N6794

    Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
    Contextual Info: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds


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    2N6794 2N6794 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR PDF

    2N6796

    Contextual Info: MOTORCLA SC XSTRS/R F 12E D | fc.3b?554 QGflbbbS S | 2N6796 M A X IM U M RATINGS Symbol Value U nit Drain-Source Voltage Vd s s 100 Vdc Drain-Gate Voltage Rq s = 1.0 m fi Vd g r 100 Vdc Vg s ±20 Vdc Id 8.0 32 Rating Gate-Source Voltage CASE 79-05, STYLE 6


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    2N6796 O-20SAF) 2N6796 PDF

    2N6798

    Abstract: IRFF230
    Contextual Info: IRFF230 2N6798 MECHANICAL DATA Dimensions in mm inches 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 200V


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    IRFF230 2N6798 O-205AF) 2N6798 IRFF230 PDF

    Contextual Info: 2N6798 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


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    2N6798 O205AF) 11-Oct-02 PDF

    2n6798

    Abstract: 2N6798L 2N6798-JQR-B
    Contextual Info: 2N6798 MECHANICAL DATA Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) FEATURES


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    2N6798 2N6798" 2N6798 2N6798-JQR-B 2N6798L 2N6798LCC4 2N6798LCC4-JQR-B 2N6798SMD 2N6798SMD-JQR-B O276AB) PDF

    Contextual Info: • 4302E71 QDS37bb T3T ■ HAS 2N6790 HARRIS N -Channel Enhancem ent-Mode Power MOS Field-Effect Transistor August 1991 Features Pa ckage T 0 -2 0 5 A F BOTTOM VIEW • 3.5A, 2 0 0 V * rD S o n = 0 . 8 0 • S O A is P o w e r- D is s ip a t io n Lim ited


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    4302E71 QDS37bb 2N6790 LH0063 PDF

    Contextual Info: 4302271 0053701 m b • HAS 2N6796 2 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features TO-205AF BOTTOM VIEW • 8.0A, 100V • rDS(on = 0 .1 8 « • SOA is Power-Dissipation Limited SOURCE • Nanosecond Switching Speeds


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    2N6796 O-205AF 2N6796 LH0063 PDF

    2N6790

    Abstract: TB334
    Contextual Info: 2N6790 Data Sheet November 1998 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high


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    2N6790 2N6790 TB334 PDF

    1RF9130

    Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
    Contextual Info: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 2N6790


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    JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120 PDF

    2N6798

    Abstract: 2N6798U
    Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6798 2N6798U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


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    MIL-PRF-19500/557 2N6798 2N6798U 10Vdc, 77Vdc T4-LDS-0049 2N6798 2N6798U PDF

    2N6790

    Abstract: IRFF220
    Contextual Info: 2N6790 IRFF220 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • REPETITIVE AVALANCHE RATING


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    2N6790 IRFF220 O-205AF) 2N6790 IRFF220 PDF

    2n6789

    Contextual Info: UNITRODE te corp 9347963 UN I T R O D E C O R P DE7| c13M7cit!3 QG1G54Û 92D 10548 ^ D POWER MOSFET TRANSISTORS 2N6789 2N6790 200 Volt, 0.80 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability


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    c13M7cit QG1G54Û 2N6789 2N6790 PDF

    2N6796

    Abstract: 2N6795
    Contextual Info: POWER MOSFET TRANSISTORS 100 Volt, 0.18 Ohm N-Channel FEATURES • • • • • ITX 2N6795 JTX, JTXV 2N6796 DESCRIPTION The U nitrode power M O SFET design utilizes the m ost advan ce d technology available. This efficien t design a ch ieves a very low Rosiom and a high transconductance.


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    2N6795 2N6796 2N6796 PDF

    2N6799

    Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel 2N6799 JTX, JTXV 2N6800 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosnm and a high transconductance. FEATURES


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    2N6799 2N6800 2N6799 PDF

    2N6788

    Abstract: 2n6790
    Contextual Info: 2N6788 and 2N6790 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION These 2N6788 and 2N6790 devices are military qualified up to a JANTXV level for highreliability applications. Microsemi also offers numerous other products to meet higher and


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    2N6788 2N6790 MIL-PRF-19500/555 2N6790 MIL-PRF-19500/555. T4-LDS-0164, PDF

    2N6796

    Contextual Info: 2N6796 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


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    2N6796 O205AF) 11-Oct-02 2N6796 PDF

    2n6798 jantx

    Abstract: 2N6798 IH0063 2N6756 QPL-19500
    Contextual Info: Standard Power MOSFETs 2N6798 File Number 1903 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 5.5A, 200V TDSIonl = 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • m m ■ ■ SOA is power-dissipation limited


    OCR Scan
    2N6798 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2n6798 jantx IH0063 2N6756 QPL-19500 PDF

    2N6792 JANTX

    Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
    Contextual Info: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds


    OCR Scan
    2N6792 2N6792 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6792 JANTX C055 LH0063 QPL-19500 2N6904 PDF

    Contextual Info: 2N6790U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/555 DESCRIPTION This 2N6790U device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage


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    2N6790U MIL-PRF-19500/555 2N6790U 2N6790U. MIL-PRF-19500/555 O-205AF T4-LDS-0229-1, PDF