IRFF220 Search Results

IRF 260 N

Abstract: IRFF220 JANTX2N6790 JANTXV2N6790
Contextual Info: PD - 90427D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number IRFF220 BVDSS RDS(on) ID 200V 3.5A 0.80Ω T0-39 ® The HEXFET technology is the key to International

Contextual Info: w vys S IRFF220, IRFF221, IRFF222, IRFF223 S e m ico n d ucto r y y 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channei Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

Contextual Info: PD - 90427D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number IRFF220 BVDSS RDS(on) ID 200V 3.5A 0.80Ω T0-39 ® The HEXFET technology is the key to International

2N6790

Abstract: IRFF220
Contextual Info: 2N6790 IRFF220 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • REPETITIVE AVALANCHE RATING

Contextual Info: 2N6790 IRFF220 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • REPETITIVE AVALANCHE RATING

IRFF220

Abstract: TA9600 TB334
Contextual Info: IRFF220 Data Sheet January 2002 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRFF220 Data Sheet Title FF2 bt 5A, 0V, 00 m, March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information IRFF220 IRFF223 Sm all-Signal Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS N-CHANNEL TM O S PO W ER FET s rDS on| = 0.8 OHM 200 V O LT S . . . d esig ne d fo r lo w volta g e , h ig h speed p o w e r sw itch in g

250M

Abstract: IRFF220 IRFF221 IRFF222 IRFF223 T4 sm diode PD937
Contextual Info: HE 0 I MaSSMSZ 0GQT37Q Ö | Data Shçet No. PD-9.378E INTERNATIONAL R E C T I F I E R ' 7 -3 Ÿ -O Ÿ INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRFF220 IRFF221 IM-CHAIMIMEL POWER MOSFETs TQ-39 PACKAGE IRFFSSS IRFFSS3 Features: 200 Volt, 0.8 Ohm HEXFET

IRFF223

Abstract: IRFF222 IRFF220 IRFF221
Contextual Info: -Standard Power MOSFETs File Number IRFF220, IRFF221, IRFF222, IRFF223 1889 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 150V - 200V rDS oni = 0.80 and 1.20 N-CHANNEL ENHANCEMENT MODE o Features: • m

Contextual Info: • M3 D5 E7 1 0 0 5 4 15 0 T74 ■ 2 3 H A R R IS HAS IRFF220/221/222/223 IRFF220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TQ-205AF • 3.0 A a n d 3.5 A , 1 5 0V - 2 0 0V • r D S on = ° - 8 f i an d

IRFF220

Contextual Info: IRFF220 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.

Contextual Info: ^s.mi-dondu.cto'L Lp 10ducts., Una 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 IRFF220 Absolute Maximum Ratings Parameter ID @ VGS = iov, TC = 25°c ID @ VGS = iov, TC = ioo°c IDM PD @ TC = 25°c

IRFF223

Contextual Info: IRFF220, IRFF221, IRFF222, IRFF223 S E M I C O N D U C T O R 3.0A and 3.5A, 150V to 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFF221R

Abstract: IBFF220R IRFF220R IRFF222R IRFF223R 08c1 HI POWER 30A MOSFET
Contextual Info: Rugged Power MOSFETs File N u m b e r 2026 IRFF220R, IRFF221R, IRFF222R, IRFF223R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 150V-200V rDs on = 0.8 0 and 1.20 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

IRFF220

Abstract: TA9600 TB334
Contextual Info: IRFF220 Data Sheet March 1999 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 3.5A, 200V • rDS ON = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRFF220

Abstract: JANTX2N6790 JANTXV2N6790 JANTX2N6 JANTXV2N
Contextual Info: PD - 90427C IRFF220 JANTX2N6790 JANTXV2N6790 REF:MIL-PRF-19500/555 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF220 BVDSS 200V RDS(on) 0.80Ω ID 3.5A  The HEXFET technology is the key to International

Contextual Info: ¡2 HARRIS IRFF220/221/222/223 IRFF220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 F e a tu re s Package TQ-205AF • 3.0 A a n d 3.5 A , 1 5 0V - 2 0 0V • r D S on = ° - 8 n a n d 1 - 2 il • S in g le P ulse A v a la n c h e E n e rg y R a te d *

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

1rfz44

Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)

2N6788 motorola

Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
Contextual Info: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles

IRF09120

Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
Contextual Info: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical