2N689 Search Results

2N6896

Abstract: TB334
Contextual Info: 2N6896 Data Sheet December 2001 -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Features • -6A, -100V The 2N6896 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed for high-speed applications such as switching regulators, switching

2N6898 JANTX

Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
Contextual Info: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds

Contextual Info: INTERNAT ION AL RECTIFIER 4flS5452 0010701 T 5bE D international Iior I Rectifier Phase Control Thyristors 25 TO 80 AMPS RMS Part v number v RRM *T RMS 't (AV) 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 100 200 400 600 800 1000

50R1A160

Abstract: 50RIA120M 50RIA80 16RIA60 50RIA20 50R1A140 50RIA120 16ria80 50RIA10 om 355
Contextual Info: Thyristors international i I ] Rectifier Phase Control Type 25-80 Am ps R M S Part Number 10RIA10 10RIA20 10RIA40 10RIA60 10RIA80 10RIA100 10RIA120 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 Vr r m Vd RM V 100 200 400 600

2N6898

Abstract: MHO16
Contextual Info: 2N6898 Jì HARRIS P-Channel Enhancement-Mode Power MOS Field-Effect Transistors A ugust 1991 Features • Package T 0 -2 0 4 A E BOTTOM VIEW - 2 5 A, -1 0 0 V • rD S(on = 0 - 2 0 0 • SO A is P ow er-D issip atio n Lim ited • N anosecond Switching S peeds

2n6898

Contextual Info: Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6898 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A,-100V ros(on): 0.20 n TERMINAL DIAGRAM

AEG T 130 N

Abstract: N018RH05 CP08F T13N500COF CA08f 80M4 SIPS535
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 CR20EY10 SC20C50 Ca08F ca09F T10F500CCC T10F500CRC T10F500UCC T10F500URC BTY87-500R 21RC50 c.;~7E 15 20 25 30 35 40 45 50 BTY91-500R 2NS89AS 2N689AS 2N689AS 2N689S BTW39-500 NS525 C231E C231E C231E C231E2

2N6895 JANTXV

Abstract: qpl-19500 2N6895 TRANSISTOR C 557 B 2N6898 2N6901 2N6756 JANTX 40722 2N6800 JANTX 2N689S
Contextual Info: Standard Power MOSFETs File Number 2N6895 1873 Power MOS Field-Effect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efifect Transistors 1.16 A, 100 V rDs on : 3.65 0 TERMINAL DIAGRAM Features: • SOA Is power-dissipation limited m Nanosecond switching speeds

2N6898

Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
Contextual Info: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

qpl-19500

Abstract: 2N6896 TRANSISTOR C 557 B 2N6898 40716 2N6897 JANTXV
Contextual Info: Standard Power MOSFETs File Number 2N6896 1874 Power MOS Field-Eflfect Transistors P-Channel Enhancernent-Mode Power MOS Field-Efffect Transistors 6 A, 100 V rDs on : 0.6 Ci TE R M IN A L D IA G R A M Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

2N6896

Abstract: TB334
Contextual Info: 2N6896 Data Sheet November 1998 File Number -6A, -100V, 0.600 Ohm, P-Channel Power MOSFET Features The 2N6896 is a P-Channel enhancement mode silicon gate power MOS field effect transistor designed for high-speed applications such as switching regulators, switching

2N689

Contextual Info: m 2N689 \ \ SILICON CONTROLLED RECTIFIER SCR DESCRIPTION: The 2N689 is Designed for General Purpose Industrial Power Control Applications. PACKAGE STYLE TO- 48 MAXIMUM RATINGS 25 A (r m s ) 16 A (a v g ) @ Te = 65 0C Ie o m < 5OO V P d is s Pg m = 5.O W

2N3986

Abstract: 2n1696 2n4146 2N3228 2N4148 LS 2027 2N3555 2n4327 2N6167 2N4331
Contextual Info: | lemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 thyristors and triggers silicon controlled rectifiers Type *Note 1 Forward Current If (»mp«) 2N6S1 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N764* 2N765* 2N766* 2N767" 2N876

2N6895

Contextual Info: 2N6895 33 HARRIS August 1991 P-Channel Enhancement-Mode Power MOS Field-Effect Transistors Package Features T0-205A F BOTTOM VIEW • -1 .1 6 A , -1 0 0 V * rDS on = 3 .6 5 0 • S O A is P ow er-D issip atio n Lim ited SOURCE _ • N anosecond S w itching S peeds

25RIA120

Abstract: 16RIA80 50RIA120 T0-208AA 10RIA10 10RIA60 10RIA100 10RIA120 10RIA20 10RIA40
Contextual Info: INTERNAT ION AL RECTIFIER 4flS5452 0010701 T 5bE D international Iior I Rectifier Phase Control Thyristors 25 TO 80 AMPS RMS Part v number v RRM 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 TC 100 200 400 600 800 1000 1200 25 50

2N6897

Abstract: TRANSISTOR 18751 DC/EQUIVALENT transistor 18751
Contextual Info: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,

2N6898

Abstract: mosfet p channel
Contextual Info: TECHNICAL DATA POWER MOSFET P CHANNEL Devices 25 AMPERE 100 VOLTS 0.2 Ω 2N6898 • • • • HIGH INPUT IMPEDANCE LOW RDS ON MAJORITY CARRIER DEVICE LINEAR TRANSFER CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS (TC = 250C unless otherwise noted) Parameters/Test Conditions

Contextual Info: m 2N689 \ \ SILICON CONTROLLED RECTIFIER SCR DESCRIPTION: The 2N689 is Designed for General Purpose Industrial Power Control Applications. PACKAGE STYLE T O -48 MAXIMUM RATINGS lc 25 A (RMS) 16 A (avo @ Tc = 65 ° C V ce 500 V P diss PGM = 5.0 W P g(avg) = 0.5 W

2N6897

Contextual Info: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,

2N6897

Contextual Info: 2N6897 33 HARRIS August 1991 P-Channel Enhancement-Mode Power MOS Field-Effect Transistors Features Package TO-204AA BOTTOM VIEW • -12A , -10 0 V * r D S on = 0 - 3 0 SOURCE v_/ • S O A is Power-Dissipation Limited _ - - DRAIN (FLANGE) • Nanosecond Switching Speeds

TO-208AA

Abstract: 180T2 to48c 50ria120m 16RIA120 50RIA120
Contextual Info: International »»Rectifier Thyristors Phase C ontrol Type 2 5 -8 0 Amps lT AV Tc Vr r m Part Number 10RIA10 10RIA20 10RIA40 10RIA60 10RIA80 10RIA100 10RIA120 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 vdrm IT(RMS) (V) (A)

2N6897

Contextual Info: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor December 2001 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,

Contextual Info: DIGITRON SEMICONDUCTORS 2N681-2N692, 2N5204-2N5207 SILICON CONTROLLED RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

2N692

Contextual Info: SCRS Continued IT (AMPS) 16 25 @ TC (°C) 90 90 90 70 ITSM (AMPS) 200 200 160 200 (a & ä (K - » uuU CASE TO-48 TO-220 TO-3 90 f 250 £ n u U ¡J TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683.A* 150 200 2N684.A* 2N3669 CS3-16B CS220-16B*