2N685 Search Results

Contextual Info: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

Contextual Info: INTERNAT ION AL RECTIFIER 4flS5452 0010701 T 5bE D international Iior I Rectifier Phase Control Thyristors 25 TO 80 AMPS RMS Part v number v RRM *T RMS 't (AV) 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 100 200 400 600 800 1000

50R1A160

Abstract: 50RIA120M 50RIA80 16RIA60 50RIA20 50R1A140 50RIA120 16ria80 50RIA10 om 355
Contextual Info: Thyristors international i I ] Rectifier Phase Control Type 25-80 Am ps R M S Part Number 10RIA10 10RIA20 10RIA40 10RIA60 10RIA80 10RIA100 10RIA120 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 Vr r m Vd RM V 100 200 400 600

DC4066

Abstract: MIL-PRF-19500 544 electrical 2N5206 2N683 2N692A 2N682 2N685 2N686 2N692 2N685 JANTX
Contextual Info: INCH-POUND MIL-PRF-19500/108K 4 December 2006 SUPERSEDING MIL-PRF-19500/108J 14 March 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, THYRISTORS CONTROLLED RECTIFIERS , SILICON, TYPES 2N682, 2N683, 2N685 THROUGH 2N692, 2N692A, 2N5206, JAN AND JANTX

2n6851

Contextual Info: Tem ic 2N6851 S ilic o n ix P-Channel Enhancement-Mode Transistor Product Summary V br Dss (V) r DS(on) ( ß ) I d (A) -200 0.80 -4 .0 ; Parametric limits in accordance with M1L-S-I9500i564 where applicable. T0-205A F (TO-39) - O— i} IÏ Ô D P-Channel MOSFET

2N683

Abstract: 2N682 TO48 package 2N685 2N692 2N690 JAN 2N690 2n688 2N685 JANTX T4-LDS-0249
Contextual Info: 2N682, 2N683, and 2N685 – 2N692 Available on commercial versions Qualified Levels: JAN and JANTX PNPN Silicon, Reverse-Blocking, Power Triode Thyristors Qualified per MIL-PRF-19500/108 DESCRIPTION This silicon controlled rectifier device is military qualified up to a JANTX level for high-reliability

2N6851

Contextual Info: 2N6851 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.

2N3670

Abstract: 2N3668 2N3669 2n4103 2n682 2N681 CS220-25M 2N687 2N683 2N684
Contextual Info: SCRs Continued IT (AMPS) 16 25 @ TC ( C) 90 90 90 70 90 ITSM (AMPS) 200 200 160 200 250 TO-220 TO-48 TO-220 o TO-3 50 mil CASE VRRM (VOLTS) 25 2N681,A 50 2N682,A 100 2N3668 2N683,A 150 200 2N684,A 2N3669 CS3-16B CS220-16B* 2N685,A 250 2N686,A 300 2N687,A

BTA12-700SW

Abstract: TLC226B BTA40-700B BTA12-700BW TLC336B BTB06-700BW BTB06-700SW btb04 600c BTA06-400GP BTA26-700B
Contextual Info: ALPHANUMERICAL INDEX Type Number AVS08-CB AVS08-CBI AVS10CB AVS10CBI AVS12CB 2N682 2N683 2N685 2N688 2N690 2N692 2N1771 2N1772 2N1774 2N1777 2N2619 2N3650 2N3651 2N3653 2N3655 2N3656 2N3658 2N5204 2N5205 2N5206 2N5207 BTA04-400A BTA04-400D BTA04-400S BTA04-400T

p12p10

Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Contextual Info: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851

2N3670

Abstract: 2N4103 2N3668 2N688A CS220-16B 2N3669 2N681 2N682 2N683 2N684
Contextual Info: SCRs Continued It (AMPS) 16 25 @ T c (°C) 90 90 90 70 90 ITSM (AMPS) 200 200 160 200 250 ( K ä & I - uUU CASE TO-3 TO-220 TO-48 f TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683.A* 150 200 2N684,A* 2N3669 CS3-16B CS220-16B* 2N685.A* 250 2N686.A*

TAG676-800

Abstract: TAG675-600 TAG676-600 TAG671-600 2N5169 2N5169 Scr 2N5170 2N3658 TAG676-200 TAG675-400
Contextual Info: mu JgkJ SCR IN METAL PACKAGE TO-48D TO-66 15A RMS 12A RMS 8A RMS 2N1842A 50V 2N1843A 2N682A 2N3753 2N1844A 2N683A 2N3754 2N1845A 2N684A 2N1846A 2N685A 250V 2N1847A 2N686A 300V 2N1848A 2N687A 2N3756 TAG670-100 TAG671-100 TAG675-100 TAG676-100 150V v V 25A RMS

2N6851

Abstract: 2N6851 JANTX 2n6800
Contextual Info: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d

2N6851

Contextual Info: 2N6851 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –200 0.80 –4.0 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: Continued IT (AMPS) 16 25 @ TC (°C) 90 90 90 70 90 ITSM (AMPS) 200 200 160 200 250 I % I U CASE TO-3 TO-220 A TO-48 TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683,A* 150 200 2N684,A* 2N3669 CS3-16B CS220-16B* 2N685.A* 250 2N686.A* 300 2N687,A*

2N3670

Abstract: 2n4103 2N681 2N687 2N3668 2N3669 2N683 CS220-25D 2N684 2N682
Contextual Info: SCRs Continued IT (AMPS) 16 25 @ TC ( C) 90 90 90 70 90 ITSM (AMPS) 200 200 160 200 250 TO-220 TO-48 TO-220 o CASE TO-3 (50 mil leads) VRRM (VOLTS) 25 2N681,A 50 2N682,A 100 2N3668 2N683,A 150 200 2N684,A 2N3669 CS3-16B CS220-16B* 2N685,A 250 2N686,A 300

Contextual Info: P-CHANNEL POWER MOSFET 2N6851 • Hermetic TO39 Metal Package • Dynamic dv/dt Rating • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated VDS VGS ID ID IDM(1) PD Drain – Source Voltage

Contextual Info: 43 02 271 0 0 5 4 50 0 072 • ¡jy H A R R HAS 2N6851 I S Avalanche-Energy-Rated P-Channel Power MOSFETs A u g u st 1991 Package Features T 0 -2 0 5 A F BOTTOM VIEW • -4.0A, -200V • rDS on = ° - 8 0 fi SOURCE • Single Pulse Avalanche Energy Rated

2N6801-SM

Abstract: BFC49
Contextual Info: SEMELAB pic Type_No 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L 2N6851 2N7000 2N7218 2N7219 2N7221 2N72220 2N7224 2N7225 2N7227 2N7227 2N7228 2N7228 2N7236 2N7237 BC264 BFC10 BFC11 BFC12 BFC13 BFC14 BFC15 BFC16 BFC17 BFC18

25RIA120

Abstract: 16RIA80 50RIA120 T0-208AA 10RIA10 10RIA60 10RIA100 10RIA120 10RIA20 10RIA40
Contextual Info: INTERNAT ION AL RECTIFIER 4flS5452 0010701 T 5bE D international Iior I Rectifier Phase Control Thyristors 25 TO 80 AMPS RMS Part v number v RRM 2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N691 2N692 TC 100 200 400 600 800 1000 1200 25 50

2N691

Contextual Info: 2N682, 2N683, 2N685 – 2N692 and 2N5206 Available on commercial versions PNPN SILICON, REVERSE-BLOCKING, POWER TRIODE THYRISTORS Qualified Levels: JAN and JANTX Qualified per MIL-PRF-19500/108 DESCRIPTION This silicon controlled rectifier device is military qualified up to a JANTX level for high-reliability

2N6851

Abstract: ON950
Contextual Info: 2N6851 Siliconix PĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) -200 0.80 -4.0 Parametric limits in accordance with MILĆSĆ19500/564 where applicable. S TOĆ205AF (TOĆ39) S G 1 2 3 G D D Top View PĆChannel MOSFET

Contextual Info: P-CHANNEL POWER MOSFET 2N6851 • Hermetic TO39 Metal Package • Dynamic dv/dt Rating • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated VDS VGS ID ID IDM(1) PD Drain – Source Voltage

2N3668

Contextual Info: SCRs Continued It (AMPS) 16 25 @ Tc (°C) 90 90 90 70 ITSM (AMPS) 200 200 160 200 (9 (K - ~ j ) ^ ä Ä IS u uu CASE TO-3 TO-220 TO-48 90 f 250 TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683.A* 150 200 2N684.A* 2N3669 CS3-16B CS220-16B* 2N685.A*