2N7002KW Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETs 2N7002KW N-channel MOSFET SOT-323 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETs 2N7002KW N-channel MOSFET SOT-323 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002KW Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in

k72 diode

Abstract: 2N7002KW K723
Contextual Info: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

transistor A114

Abstract: a114 transistor transistor a114 esd 2N7002KW
Contextual Info: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

k72 wn

Abstract: k72 diode 2N7002KW
Contextual Info: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

K72 marking diode

Contextual Info: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

Contextual Info: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

Contextual Info: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

Contextual Info: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-323 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • Advanced Trench Process Technology 0.087(2.20) 0.070(1.80) • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

2N7002KW

Abstract: MosFET
Contextual Info: 2N7002KW 115mA , 60V, RDS ON 4  N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES         SOT-323 RDS(ON), VGS@10V, IDS@500mA=3

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002KW Features • • • • • • • • High density cell design for Low RDS ON Voltage controlled small signal switch

marking 72K

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002KW Features • • • • • • • High density cell design for Low RDS ON Voltage controlled small signal switch

SOT-323

Contextual Info: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW List List. 1 Package outline. 2

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

AC82PM45

Abstract: AC82GM45 KB926 AF82801IBM SLB8Q N10M-GE1-S G545A1 NV10M-GS tps51620 LA-5081P KIWA7
Contextual Info: A B C D E 1 1 KIWA7/A8 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_GM/PM+ICH9-M core logic 3 3 REV:0.4 4 4 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2008/03/25 Deciphered Date 2008/04/ Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

diac kr 206

Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
Contextual Info: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com

EPD segment driver

Contextual Info: Doc. No. 4P008-00 E-paper Display COG Driver Interface Timing Description Detailed information to design a timing controller for 1.44”, 2”, and 2.7” E-paper panels Date 2012/07/27 Doc. No. 4P008-00 Revision 02 Design Engineering Approval 李 Check Design

Contextual Info: Doc. No.1P001-00 Product Specifications Customer Standard Description 2.0” TFT EPD Panel Model Name EG020AS012 Date 2013/07/15 Doc. No. 1P001-00 Revision 04 Customer Approval Date The above signature represents that the product specifications, testing regulation, and warranty in the specifications are accepted

Power MOSFET N-Channel sot-23

Abstract: MOSFET P-channel SOT-23 12 mosfet sot23 si2301 Fig.24 SI2302
Contextual Info: MCC TM Micro Commercial Components MOSFET MCC Part Number Power Rating DrainSource Voltage VDSS Gate Threshold Voltage Vth GS Drain Current IDMAX Static Drain-Source On Resistance RDS(ON)MAX (mW) (V) (V) (mA) (Ω) 2N7002 200 60 2.5 115 7.5 Package Type Polarity

KB926

Abstract: AC82PM45 LA-5081P tps51620 sis412 kiwa5 la-5081p AC82GM45 NV10M-GS intel GM45 cantiga n10m-ge1-s
Contextual Info: A B C ZZZ ZZZ1 ZZZ2 ZZZ3 PCB LA-5081P LS-5081P LS-5082P D E 1 1 DAZ@ DAZ@ DAZ@ KIWA5/A6 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_GM/PM+ICH9-M core logic 3 3 REV:1.0 4 4 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification

Contextual Info: Doc. No.1P038-00 Product Specifications Standard Description 4.41” TFT EPD Panel Model Name ET044AS013 Date 2013/07/04 Doc. No. 1P038-00 Revision 03 PL AY S IN C . Customer VA Date SI VE D IS Customer Approval PE R The above signature represents that the product specifications, testing regulation,