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    SI2301 Price and Stock

    Vishay Siliconix SI2301CDS-T1-E3

    MOSFET P-CH 20V 3.1A SOT23-3
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    DigiKey SI2301CDS-T1-E3 Reel 45,000 3,000
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    RS SI2301CDS-T1-E3 Bulk 3,000
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    Vishay Siliconix SI2301BDS-T1-GE3

    MOSFET P-CH 20V 2.2A SOT23-3
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    DigiKey SI2301BDS-T1-GE3 Cut Tape 16,669 1
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    SI2301BDS-T1-GE3 Digi-Reel 16,669 1
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    SI2301BDS-T1-GE3 Reel 9,000 3,000
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    Quest Components SI2301BDS-T1-GE3 5
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    Vishay Siliconix SI2301CDS-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI2301CDS-T1-BE3 Digi-Reel 9,122 1
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    SI2301CDS-T1-BE3 Cut Tape 9,122 1
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    SI2301CDS-T1-BE3 Reel 9,000 3,000
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    Vishay Siliconix SI2301BDS-T1-BE3

    P-CHANNEL 2.5-V (G-S) MOSFET
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    DigiKey SI2301BDS-T1-BE3 Digi-Reel 6,305 1
    • 1 $0.59
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    SI2301BDS-T1-BE3 Cut Tape 6,305 1
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    SI2301BDS-T1-BE3 Reel 6,000 3,000
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    Micro Commercial Components SI2301HE3-TP

    P-CHANNEL MOSFET,SOT-23
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    DigiKey SI2301HE3-TP Digi-Reel 6,000 1
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    SI2301HE3-TP Reel 6,000 3,000
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    SI2301HE3-TP Cut Tape 6,000 1
    • 1 $0.45
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    Mouser Electronics SI2301HE3-TP
    • 1 $0.43
    • 10 $0.327
    • 100 $0.204
    • 1000 $0.11
    • 10000 $0.082
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    Verical SI2301HE3-TP 3,000 87
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    SI2301HE3-TP 3,000 3,000
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    SI2301HE3-TP 3,000 3,000
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    Arrow Electronics SI2301HE3-TP Cut Strips 3,000 20 Weeks 1
    • 1 $0.2821
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    • 1000 $0.2624
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    SI2301 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2301-3A Unknown MOSFET SOT-23 P Channel 20V Original PDF
    SI2301A UMW 20V 2.8A 400MW 142MR@2.5V,2A 1V@ Original PDF
    Si2301ADS Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI2301ADS Vishay Telefunken V(ds): -20V V(gs): ±8V P-channel 2.5-V (G-S) MOSFET Original PDF
    Si2301ADS-E3 Vishay Transistor Mosfet P-CH 20V 1.75A 3TO-236 Original PDF
    Si2301ADS-T1 Vishay Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL Original PDF
    Si2301ADS-T1-E3 Vishay Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL Original PDF
    SI2301AHE3-TP Micro Commercial Interface Original PDF
    SI2301A-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL,MOSFETS,SOT-23 PACKAGE Original PDF
    Si2301BD Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si2301BDS-E3 Vishay Transistor Mosfet P-CH 20V 2.2A 3TO-236 Original PDF
    Si2301BDS SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI2301BDST1 Vishay MOSFET,P CHAN,2.5V,SOT23 Original PDF
    Si2301BDS-T1 Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI2301BDS-T1-BE3 Vishay Siliconix P-CHANNEL 2.5-V (G-S) MOSFET Original PDF
    Si2301BDS-T1-E3 Vishay Transistor Mosfet P-CH 20V 2.2A 3TO-236 T/R Original PDF
    SI2301BDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.2A SOT23-3 Original PDF
    SI2301BDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.2A SOT23-3 Original PDF
    SI2301CDS-T1-BE3 Vishay Siliconix P-CHANNEL 20-V (D-S) MOSFET Original PDF

    SI2301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si2301

    Abstract: No abstract text available
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    si2301cds-t1-ge3

    Abstract: No abstract text available
    Text: Specification Comparison www.vishay.com Vishay Siliconix Si2301CDS vs. Si2301BDS Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2301CDS-T1-GE3 replaces Si2301BDS-T1-GE3 Si2301CDS-T1-E3 replaces Si2301BDS-T1-E3


    Original     		PDF Si2301CDS Si2301BDS OT-23 Si2301CDS-T1-GE3 Si2301BDS-T1-GE3 Si2301CDS-T1-E3 Si2301BDS-T1-E3 Si2301BDS-T1

    SI2301

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2301 Features • • • • • • • • P-Channel Enhancement Mode -20V,-2.8A, RDS ON =120mΩ@VGS=-4.5V


    Original     		PDF SI2301 OT-23 OT-23 SI2301

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 08-Apr-05

    Si2301CDS

    Abstract: SI2301CDS-T1-GE3 Si2301CDS-T1-E3 MOSFET SOT-23 Si2301BDS-T1-GE3 SI2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
    Text: Specification Comparison Vishay Siliconix Si2301CDS vs. Si2301BDS Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2301CDS-T1-GE3 replaces Si2301BDS-T1-GE3 Si2301CDS-T1-E3 replaces Si2301BDS-T1-E3 Si2301CDS-T1-GE3 or Si2301CDS-T1-E3 replaces Si2301BDS-T1


    Original     		PDF Si2301CDS Si2301BDS OT-23 Si2301CDS-T1-GE3 Si2301BDS-T1-GE3 Si2301CDS-T1-E3 Si2301BDS-T1-E3 Si2301BDS-T1 MOSFET SOT-23

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = −4.5 V −2.4 0.150 @ VGS = −2.5 V −2.0 VDS (V) −20 20 D RoH Lead (Pb)-Free Version is RoHS Compliant Available TO-236 (SOT-23) G 1 3


    Original     		PDF Si2301BDS O-236 OT-23) Si2301BDS-T1 Si2301BDS-T1--E3 Si2301 S-50694--Rev. 18-Apr-05 Si2301BDS SPICE Device Model

    si2301

    Abstract: "MARKING CODE S1" si2301 sot-23
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2301 Features • • • • • • • P-Channel Enhancement Mode -20V,-2.8A, RDS ON =120mΩ@VGS=-4.5V


    Original     		PDF SI2301 OT-23 si2301 "MARKING CODE S1" si2301 sot-23

    Si2301

    Abstract: Si2301BDS
    Text: Si2301BDS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = -4.5 V -2.4 0.150 @ VGS = -2.5 V -2.0 VDS (V) -20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301 BDS (L1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 S-22048--Rev. 18-Nov-02

    SI2301DS

    Abstract: S5135
    Text: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si2301DS O-236 OT-23) S-51354--Rev. 11-Dec-96 S5135

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)


    Original     		PDF Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 11-Mar-11

    2430 marking

    Abstract: No abstract text available
    Text: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2301CDS 2002/95/EC O-236 OT-23) Si2301CDS-T1-E3 Si2301CDS-T1-GE3 18-Jul-08 2430 marking

    TP548

    Abstract: TP547 tp546 RLS4148 cke2 RSMRST R586
    Text: 1 2 3 4 5 6 7 8 sent to d/d bd for charging comparator ckt when system is in powered off state Q508 SI2301DS VDD5 TP516 GCL_STPCLK# 2,5 TP542 GCL_CPUSTP# 5,8 TP543 PCI_STP# 8,12 VDD5S D S A TP549 G R549 100K 0603 SDRAMCLK0 6,8 TP550 TP21 ADEN# 20,25 BAS16


    Original     		PDF SI2301DS TP543 TP516 TP542 TP549 TP550 BAS16 TP527 DTC144WK TP544 TP548 TP547 tp546 RLS4148 cke2 RSMRST R586

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2301CDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2301CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI2301

    Abstract: si2301 sot-23
    Text: SI2301 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23(PACKAGE)


    Original     		PDF SI2301 OT-23 SI2301 si2301 sot-23

    Untitled

    Abstract: No abstract text available
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2301CDS 2002/95/EC O-236 OT-23) Si2301CDS-T1-E3 Si2301CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    SI2301DS

    Abstract: No abstract text available
    Text: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si2301DS O-236 OT-23) S-51354--Rev. 11-Dec-96

    SI2301CDS-T1-GE3

    Abstract: diode 18B
    Text: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2301CDS 2002/95/EC O-236 OT-23) Si2301CDS-T1-E3 Si2301CDS-T1-GE3 11-Mar-11 diode 18B

    Untitled

    Abstract: No abstract text available
    Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code


    Original     		PDF Si2301DS O-236 OT-23) Si2301DS-T1 08-Apr-05

    si2301ads

    Abstract: No abstract text available
    Text: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2301ADS O-236 OT-23) Si2301DS 08-Apr-05

    Si2301

    Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = −4.5 V −2.4 0.150 @ VGS = −2.5 V −2.0 VDS (V) −20 20 D RoH Lead (Pb)-Free Version is RoHS Compliant Available TO-236 (SOT-23) G 1 3


    Original     		PDF Si2301BDS O-236 OT-23) Si2301BDS-T1 Si2301BDS-T1--E3 Si2301 08-Apr-05 Si2301BDS SPICE Device Model

    SI2301DS

    Abstract: si2301 Si2301DS SPICE Device Model SI2301DS* equivalent
    Text: SPICE Device Model Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V Rated MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2301DS 17-Apr-01 si2301 Si2301DS SPICE Device Model SI2301DS* equivalent

    Si2301DS

    Abstract: No abstract text available
    Text: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2301DS O-236 OT-23) S-58543--Rev. 20-Jul-98

    Si2301CDS

    Abstract: SI2301CDS-T1-GE3 SI2301CDS-T1-E3
    Text: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2301CDS 2002/95/EC O-236 OT-23) Si2301CDS-T1-E3 Si2301CDS-T1-GE3 18-Jul-08