2N7227 Search Results

2N7227

Abstract: SV400
Contextual Info: Tem ic 2N7227JANTX/JANTXV Siliconix N-Channel Enhancement-Mode Transistors Product Summary V D S V r DS(on) (Q ) I d (A) 400 0.415 14 Parametric limits in accordance with M 1I.-S-19500I592 where applicable. TO-254AA H erm etic Package o G 0 - It Case Isolated

Contextual Info: AD VA N C E D PO WE R T E C H N O L O G Y blE D • Qg5 7 W QDDQfl3S 747 H A V P WWaa d v a n c ed POW ER Te c h n o l o g y QD 2N7227 400 Volt 2N7227* 2N7227* O S POWER MOS IV 0.315Q 'QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS

Contextual Info: 2N7227+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)14 I(DM) Max. (A) Pulsed I(D)9.0 @Temp (øC)100# IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55

2N7227U

Abstract: 2N7227
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7227 2N7227U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

JANTXV2N7224

Abstract: 2N7224 JANTXV 2N7228 JANTX mosfet data sheet JANTX2N7224 JANTX2N7225 2N7228 JANTX mosfet JANTX2N7228 2N7224 2N7225 2N7227
Contextual Info: 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, 2N7227, 2N7227 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

2N7225

Abstract: JS500 2N7224 2N7227 2N7228 OMNIREL N7224
Contextual Info: 2N7224 2N7227 2N7225 2N7228 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V T h ru 500V, N -C h a n n e l E n h a n c e m e n t M o d e , M O S F E T P o w e r T r a n s is to r FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS on

Contextual Info: A d van ced P o w er Te c h n o l o g y APT4030CNR POWER MOS IV 400V 15.0A 0.300ft Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching 100% Avalanche Tested • Low Gate Charge Similar to the 2N7227, 2N7227 and 2N7227

Contextual Info: A d van ced P o w er Te c h n o l o g y _ 0 D 0.3150 . 2N7227 400 Volt 2N7227* 2N7227* POWER MOS IV *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N -CHANNEL HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

2n7227

Abstract: jx2n
Contextual Info: D TO-254 G 0.315Ω 2N7227 400 Volt 2N7227* 2N7227* S TM POWER MOS IV *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter VDSS

MOS 4016

Abstract: 2u 64 diode TO-254AA Package MJ 800
Contextual Info: D TO-254 G 400V 15.0A 0.300Ω APT4030CNR S TM POWER MOS IV Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching • 100% Avalanche Tested • Low Gate Charge • Similar to the 2N7227, 2N7227 and 2N7227 MAXIMUM RATINGS

2N7227

Contextual Info: 2N7227JANTX/JANTXV N-Channel Enhancement-Mode Transistors Product Summary VDS V rDS(on) (W) ID (A) 400 0.415 14 Parametric limits in accordance with MIL-S-19500/592 where applicable. TO-254AA Hermetic Package D G Case Isolated S D S G N-Channel MOSFET Top View

2N6801-SM

Abstract: BFC49
Contextual Info: SEMELAB pic Type_No 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L 2N6851 2N7000 2N7218 2N7219 2N7221 2N72220 2N7224 2N7225 2N7227 2N7227 2N7228 2N7228 2N7236 2N7237 BC264 BFC10 BFC11 BFC12 BFC13 BFC14 BFC15 BFC16 BFC17 BFC18

Contextual Info: 2N7224 2N7227 2N7225 2N7228 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Ceramic Feedthroughs Available

2n7227

Abstract: IAR14 190NC
Contextual Info: 2N7227JANTX/JANTXV Siliconix NĆChannel EnhancementĆMode Transistors Product Summary VDS V rDS(on) (W) ID (A) 400 0.415 14 Parametric limits in accordance with MILĆSĆ19500/592 where applicable. TOĆ254AA Hermetic Package D G Case Isolated S D S G NĆChannel MOSFET

2N7225 JANTX

Abstract: 2N7228 JANTX mosfet 2N7225 2N7224 JANTXV 2N7228
Contextual Info: 2N7224, 2N7225, 2N7227 and 2N7228 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/592 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. These devices are also available in a low profile U surface mount

Contextual Info: 2N7224 2N7227 2N7225 2N7228 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V. N-C hannel E n h a n c e m e n t Mode. MOSFET Power T r a n s is t o r FEATURES • • • • Isolated Hermetic Metal Package Fast Switching LowRDS on Ceramic Feedthroughs Available

Contextual Info: 2N7227+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)14 I(DM) Max. (A) Pulsed I(D)9.0 @Temp (øC)100# IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55

2N6801LCC6

Contextual Info: Search Results Part number search for devices beginning "2N6801" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N6801 N-Channel TO39 450V 2.5A 25W

Contextual Info: IINCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/592G 17 April 2013 SUPERSEDING MIL-PRF-19500/592F 2 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

Contextual Info: Data Sheet No. PD-9.491C INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM350 2N 7227 2N7227 2N7227 N-CHANNEL REF: MIL-S-1SSOO/592] 400 Volt, 0.315 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

SHD239608

Abstract: shd239606
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM

2N7227

Abstract: IRFM350
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 400 14 9 150 0.315 @ 9 0.83 IRFM350