2N7228 Search Results

Contextual Info: _ A d van ced P o w er Te c h n o l o g y D 8 0.4150 . 2N7228 500 Volt 2N7228* 2N7228* POWER MOS IV *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N -CHANNEL HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.

2N7228

Contextual Info: 2N7228JANTX/JANTXV Siliconix NĆChannel EnhancementĆMode Transistors Product Summary VDS V rDS(on) (W) ID (A) 500 0.515 12 Parametric limits in accordance with MILĆSĆ19500/592 where applicable. TOĆ254AA Hermetic Package D G Case Isolated S D S G NĆChannel MOSFET

2N7228

Contextual Info: 2N7228 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800)

2N7228 JANTX mosfet data sheet

Abstract: MIL-PRF-19500/592 2N7228 2N7228U
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7228 2N7228U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Contextual Info: D TO-254 G 0.415Ω 2N7228 500 Volt 2N7228* 2N7228* S TM POWER MOS IV *QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter VDSS

JANTXV2N7224

Abstract: 2N7224 JANTXV 2N7228 JANTX mosfet data sheet JANTX2N7224 JANTX2N7225 2N7228 JANTX mosfet JANTX2N7228 2N7224 2N7225 2N7227
Contextual Info: 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, 2N7228, 2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

Contextual Info: 2N7228+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D)8.0 @Temp (øC)100# IDM Max (@25øC Amb)48 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55

diode 2U 88

Abstract: 2u 87 x diode APT5040CN MJ 800
Contextual Info: D TO-254 G 500V 13.0A 0.400Ω APT5040CNR S TM POWER MOS IV Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching • 100% Avalanche Tested • Low Gate Charge • Similar to the 2N7228, 2N7228 and 2N7228 MAXIMUM RATINGS

2N7225

Abstract: JS500 2N7224 2N7227 2N7228 OMNIREL N7224
Contextual Info: 2N7224 2N7227 2N7225 2N7228 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V T h ru 500V, N -C h a n n e l E n h a n c e m e n t M o d e , M O S F E T P o w e r T r a n s is to r FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS on

2N7228JANTX

Abstract: 2n7228
Contextual Info: 2N7228JANTX/JANTXV N-Channel Enhancement-Mode Transistors Product Summary VDS V rDS(on) (W) ID (A) 500 0.515 12 Parametric limits in accordance with MIL-S-19500/592 where applicable. TO-254AA Hermetic Package D G Case Isolated S D S G N-Channel MOSFET Top View

Contextual Info: 2N7228+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D)8.0 @Temp (øC)100# IDM Max (@25øC Amb)48 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55

Contextual Info: A d van ced P o w er Te c h n o l o g y APT5040CNR POWER MOS IV 500V 13.0A 0.400ft Avalanche Rated N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS • Faster Switching 100% Avalanche Tested • Low Gate Charge Similar to the 2N7228, 2N7228 and 2N7228

Contextual Info: T em ic sii,conlx_ 2N7228JANTX/JANTXV N-Channel Enhancement-Mode Transistors Product Summary VDS V r DS(on) (Q ) I d (A) 500 0.515 12 Parametric limits in accordance with MIL-S-19500/592 where applicable. TO-254AA H erm etic Package D O o 0-

2N6801-SM

Abstract: BFC49
Contextual Info: SEMELAB pic Type_No 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L 2N6851 2N7000 2N7218 2N7219 2N7221 2N72220 2N7224 2N7225 2N7227 2N7227 2N7228 2N7228 2N7236 2N7237 BC264 BFC10 BFC11 BFC12 BFC13 BFC14 BFC15 BFC16 BFC17 BFC18

Contextual Info: ADVANCED POlilER TECHNOLOGY L.1E D 0257*1 [ H 3^2 HAVP A dvanced P o w er Te c h n o lo g y ?D M 6 ÜDOOfiBT 2N7228 500 Volt 2N7228* 2N7228* s POWER MOS IV 0.415Q •QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS

2N7228 JANTX mosfet

Abstract: 2N7224U
Contextual Info: 2N7224U, 2N7225U, 2N7227U & 2N7228U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/592 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. These devices are also available in a thru hole TO-254AA package.

2N7225 JANTX

Abstract: 2N7228 JANTX mosfet 2N7225 2N7224 JANTXV 2N7228
Contextual Info: 2N7224, 2N7225, 2N7227 and 2N7228 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/592 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. These devices are also available in a low profile U surface mount

Contextual Info: 2N7224 2N7227 2N7225 2N7228 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V. N-C hannel E n h a n c e m e n t Mode. MOSFET Power T r a n s is t o r FEATURES • • • • Isolated Hermetic Metal Package Fast Switching LowRDS on Ceramic Feedthroughs Available

T3D DIODE

Abstract: 2n7226 mosfet k 1357 T3D 76 T3D 40 DIODE 2N7228 JANTX T3D 65 diode T3D 53 diode t3d diode type T3D 83 DIODE
Contextual Info: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM450 SN72S8 2N7228 2N7228 ;n N-CHANNEL [REF: MIL-S-135OO/502] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

2N7228 JANTX mosfet

Abstract: 2N7228 JANTX IRFM450 IOR 235 IOR MOSFET 2N7228 JANTX mosfet data sheet 2N7228 JANTXV2N7228 I-362 I-361
Contextual Info: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER X & R REPETITIVE AVALANCHE RATED AND dv/dt RATED TRANSISTOR IRFM45Q S N 7 C E S N-CHANNEL JANTX2N722B 2N7228 REF: MIL-S-19500/59S] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET technology is the key to International

transistor 415

Abstract: mosfets 2N7228 IRFM450
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 500 12 8 150 0.415 @ 8 0.83 IRFM450

Contextual Info: IINCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/592G 17 April 2013 SUPERSEDING MIL-PRF-19500/592F 2 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

Contextual Info: Data Sheet No. PD-9.493E INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR : IRFM450 SN7SS8 2N7228 2N7228 N-CHANNEL [REF: M IL-S-19500/5SS] 500 Volt, 0.415 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130