2SA0900 Search Results

2SA0900

Abstract: 2SC1568 2SC156
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA0900

Abstract: 2SA900 2SC1868
Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink

2SC1568

Abstract: 2sc* pnp 2SA0900 2SA900
Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification Complementary to 2SC1568 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector to emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink

2SC1568

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA0900

Abstract: 2SA900 2SC1868
Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 16.0±1.0 M Di ain sc te on na tin nc ue e/ d • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA0900

Abstract: 2SA900 2SC1868
Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 11.0±0.5 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink

2SA0900

Abstract: 2SC1568 shelf life
Contextual Info: Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.75±0.1 Rating 0.5±0.1

2SA0900

Abstract: 2SC1568
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink

Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency Power amplification Complementary to 2SC1868 3.2±0.2 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

2SA0900

Abstract: 2SA900 2SC1568
Contextual Info: Power Transistors 2SC1568 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Low collector to emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a low-voltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts

2SC1568

Abstract: 2SA0900
Contextual Info: Power Transistors 2SC1568 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Low collector to emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a low-voltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts

2Sc1568

Contextual Info: Power Transistors 2SC1568 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Low collector to emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a low-voltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts

2SC5224

Abstract: 2SA1949 2SB1573 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions U Type (D36) TO-126 (D49 * , D50) MT3 Type (D40) MT4 Type (D41) TO-202 (D51) T0-220(a) (D52) TO-220F (D55) 2SC1398A