2SC1568 Search Results

2SC1568

Abstract: 2SA900
Contextual Info: Inchange Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA900 ·Low collector saturation voltage APPLICATIONS ·For low voltage type medium output power amplification PINNING

204S60

Abstract: 2SC1568 2SA900 2SC15
Contextual Info: Power T ransistors 2SC15Ó8 2SC1568 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Am plifier for Low Voltage Supply Com plem entary Pair with 2SA900 • Features • Low collector-emitter saturation voltage VcEcsa» • High performance at low supply voltage

2SA900

Abstract: 2SC1568
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS

2SA0900

Abstract: 2SC1568 2SC156
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SC1568

Abstract: 2sc* pnp 2SA0900 2SA900
Contextual Info: Power Transistors 2SA0900 2SA900 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification Complementary to 2SC1568 3.2±0.2 1.9±0.1 3.05±0.1 • Low collector to emitter saturation voltage VCE(sat) • TO-126B package which requires no insulation plate for installation to the heat sink

2SA900

Abstract: 2SC1568
Contextual Info: JMnic Product Specification 2SA900 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1568 ・Low collector saturation voltage APPLICATIONS ・For audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter

2SC1568

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

BC132A

Abstract: 2SA900 2SC1568
Contextual Info: PANASONIC INDL/ELEKiSENI} 7SC D J t^32flS4 ÜODfl?! 1 "|T •_T- ys.-i7 S 2 A 9 '> U 2SA900 P N P x hf $ 4- '> t \/ ~f \s — i~ f l2 /S i P N P Epitaxial Planar Power Amplifier > ~fl) S > $ U/ Complementary Pair with 2SC1568 • 4# ^ / F e a t u r r e s

2SA900

Abstract: 2SC1568
Contextual Info: AOK AOK Semiconductor Product Specification 2SA900 S ilicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type 2SC1568 • Low collector saturation voltage APPLICATIONS • For audio frequency power amplifier PINNING PIN DESCRIPTION

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA900

Abstract: 2SC15 2SC1568
Contextual Info: Power T ransistors 2SC15Ó8 2SC1568 Silicon NPN Epitaxial Planar Type Package Dim ensions Medium Power Am plifier for Low Voltage Supply Com plem entary Pair with 2SA900 • Features • Low collector-em itter saturation voltage V cE (.t> • High perform ance a t low supply voltage

Contextual Info: 2SC1568 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)18 I(C) Max. (A)1 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.90 h(FE) Max. Current gain.360

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA900

Abstract: 2SC1568
Contextual Info: SavantIC Semiconductor Product Specification 2SA900 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1568 ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier PINNING PIN DESCRIPTION 1

2SA0900

Abstract: 2SA900 2SC1568
Contextual Info: Power Transistors 2SC1568 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Low collector to emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a low-voltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts

2SA0900

Abstract: 2SC1568 shelf life
Contextual Info: Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.75±0.1 Rating 0.5±0.1

2SC1568

Abstract: 2SA0900
Contextual Info: Power Transistors 2SC1568 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Low collector to emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a low-voltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts

2SA0900

Abstract: 2SC1568
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SC1568

Abstract: 2SA900
Contextual Info: SavantIC Semiconductor Product Specification 2SC1568 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA900 ·Low collector saturation voltage APPLICATIONS ·For low voltage type medium output power amplification PINNING

Audio Output Transistor Amplifier

Abstract: 2SA900 2SC1568
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA900 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 APPLICATIONS

2Sc1568

Contextual Info: Power Transistors 2SC1568 Silicon NPN epitaxial planar type Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Low collector to emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a low-voltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc1589

Abstract: 2SC1502 2SC1583 2SC1575 2SC1508 2sc1589 equivalent 2SC1598 2SC1528 2SC1588 2SC1591
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) 2SC1501 (V) Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE fab/ft* VCE Ic (ºC) (MHz) (V) (mA) (mA) (mW) 300 5 100 2SC1503 50 3A 2SC1504 400 6 2SC1505 300 7 200 2SC1506 300 7 200

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and