2SA1096 Search Results

EAt-11

Abstract: 2SA1096 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SA1096, 2SA1096A 2SA1096, 2SA1096A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SC2497, 2SC2497A • Features • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S C 2497, 2S C 2497A

2SA1015

Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
Contextual Info: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A

2SC2497A

Contextual Info: Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink

Contextual Info: J.E.\i£,u iJ-'ioaueti, line. {s TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1096 DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEo= -50V (Min)

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC2497 and 2SC2497A 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector to emitter voltage

2SA1096

Abstract: 2SA1096A Jmnic
Contextual Info: JMnic Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2497/2SC2497A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA1096

Abstract: 2SA1096A 2SA109
Contextual Info: SavantIC Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open

2SC1096A

Abstract: 2SC2497A 2SA1096 2SC2497
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096, 2SC1096A Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA1096A

Abstract: 2SC2497A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1096A DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -60V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497A APPLICATIONS ·Designed for low-frequency power amplification

2SC2497

Abstract: 2SC2497A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2497 2SC2497A Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1096/A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency power amplification PINNING

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA1096, 2SA1096A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC2497, 2SC2497A Unit: mm 8.0+0.5 –0.1 3.2±0.2 Parameter Symbol

2SC2497

Abstract: 2SC2497A
Contextual Info: Inchange Semiconductor Product Specification 2SC2497 2SC2497A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1096/A ・High collector to emitter voltage VCEO APPLICATIONS ・For low-frequency power amplification

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A 2SA109
Contextual Info: Power Transistors 2 SA 1 0 9 6 , 2 S A 1096A 2SA1096, 2SA1096A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SC2497, 2SC2497A • Features • 5W output in com plem entary pair with 2SC2497, 2SC2497A • TO-126 package, no insulator n eeded when fixing to a heat sink

2SC2497

Abstract: 2SC1497 2SC2497A 2SA1096 2SA1096A
Contextual Info: Power T ransistors 2SC2497, 2SC2497A 2SC2497, 2SC2497A Silicon NPN Epitaxial Planar Type Package Dimensions A F Power Amplifier Complementary Pair with 2SA1096, 2SA1096A • Features • High collector-em itter voltage V ceo • TO-126 package, no insulator needed w hen fixing to a h e a t sink

2SA1096

Abstract: 2SA1096A
Contextual Info: AOK AOK Semiconductor P roduct S pecification 2SA1096 2SA 1096A S ilicon PNP Pow er T ransistors DESCRIPTIO N • W ith T O -126 package • C om plem ent to type 2S C 2497/2S C 2497A A P P LIC A T IO N S • F o r low -frequency power am plification PINNING

2SC2497A

Abstract: 2SA1096 2SA1096A 2SC2497
Contextual Info: Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink

2SA1096

Abstract: 2SC2497
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1096 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -50V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497 APPLICATIONS ·Designed for low-frequency power amplification

2SA1096

Abstract: 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink

2SC2497

Abstract: 2SC1096A 2SC2497A 2SA1096
Contextual Info: Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096, 2SC1096A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open

2sa1015

Abstract: 2SA933 2SA733 2SA620 2SA429 2SB558 Nec b 616 2SA1090 2SB596 2SA673
Contextual Info: m Type * € tt € No. Manuf. SANYO 2SA 580 * ± « 2SA984 * 2SA 581 « ± a 2SA1450 * 2SA 594 — s s * * 2SA 597 s s 3K TOSHIBA m B NEC B ÍI HITACHI 2SA673 fâ T MATSUSHITA 2SA1096 2SA1283 — A ROHM 2SA935 2SA935 2SA933 2SA748 2SB1043 2SA1399 2SA 603

2SA109

Abstract: 2SA1096 2SC249 semiconductor product 2SA1096A Transistors POWER TRANSISTORS
Contextual Info: Inchange Semiconductor Product Specification 2SA1096 2SA1096A Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2