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    2SA1358 Search Results

    2SA1358 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1358 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: driver; Part Number: 2SC3421 Original PDF
    2SA1358 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1358 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1358 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1358 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1358 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1358 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1358 Unknown Cross Reference Datasheet Scan PDF
    2SA1358 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1358 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1358 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1358 Toshiba SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR Scan PDF
    2SA1358 Toshiba Silicon PNP transistor for audio frequency power amplifier applications Scan PDF
    2SA1358 Toshiba TO-126 Package Transistor Scan PDF
    2SA1358-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1358O Toshiba Silicon PNP Epitaxial Transistor Scan PDF
    2SA1358-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1358Y Toshiba Silicon PNP Epitaxial Transistor Scan PDF

    2SA1358 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors TO- 126C 2SC3421 TRANSISTOR NPN 1. BASE FEATURES z Complementary to 2SA1358 z Suitable for Driver of 60 to 80 Watts Audio Amplifier z High Breakdown Voltage 2. COLLECTOR


    Original     		PDF O-126C 2SC3421 2SA1358 100mA 500mA

    2sa1358

    Abstract: TRANSISTOR A1358 A1358
    Text: 2SA1358 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1358 Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver of 60 to 80 watts • High breakdown voltage Unit: mm Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SA1358 2SC3421 2sa1358 TRANSISTOR A1358 A1358

    c3421 transistor

    Abstract: C3421 TOSHIBA c3421 transistor c3421 2SA1358 2SC3421
    Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SC3421 2SA1358 c3421 transistor C3421 TOSHIBA c3421 transistor c3421 2SA1358 2SC3421

    TRANSISTOR A1358

    Abstract: 2SA1358 a1358 transistor A1358 2SC3421
    Text: 2SA1358 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1358 Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver of 60 to 80 watts • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SA1358 2SC3421 TRANSISTOR A1358 2SA1358 a1358 transistor A1358 2SC3421

    2sa1358

    Abstract: 2SC3421
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1358 DESCRIPTION •High Collector-Emitter Breakdown Voltage : V BR CEO= -120V(Min) ·Complement to Type 2SC3421 APPLICATIONS ·Designed for audio frequency power amplifier applications.


    Original     		PDF 2SA1358 -120V 2SC3421 -500mA; -50mA -500mA -120V; 2sa1358 2SC3421

    2SA1358

    Abstract: 2sa135 Audio Output Transistor Amplifier 2SC3421 2SC342
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1358 DESCRIPTION •High Collector-Emitter Breakdown Voltage : V BR CEO= -120V(Min) ·Complement to Type 2SC3421 APPLICATIONS ·Designed for audio frequency power amplifier applications.


    Original     		PDF 2SA1358 -120V 2SC3421 -500mA; -50mA -500mA -120V; 2SA1358 2sa135 Audio Output Transistor Amplifier 2SC3421 2SC342

    2SC3421

    Abstract: Audio Output Transistor Amplifier audio NPN 2SA1358
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3421 DESCRIPTION •High Collector-Emitter Breakdown Voltage : V BR CEO= 120V(Min) ·Complement to Type 2SA1358 APPLICATIONS ·Designed for audio frequency power amplifier applications.


    Original     		PDF 2SC3421 2SA1358 500mA; 500mA 2SC3421 Audio Output Transistor Amplifier audio NPN 2SA1358

    c3421 transistor

    Abstract: c3421 2SC3421 transistor c3421 2SA1358 C3421 TOSHIBA
    Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SC3421 2SA1358 c3421 transistor c3421 2SC3421 transistor c3421 2SA1358 C3421 TOSHIBA

    2SA1358

    Abstract: A1358 2SC3421
    Text: 2SA1358 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1358 ○ 電力増幅用励振段増幅用 単位: mm • 2SC3421 とコンプリメンタリになります。 • PO = 60~80 W メインアンプドライバー段に最適です。


    Original     		PDF 2SA1358 2SC3421 20070701-JA 2SA1358 A1358 2SC3421

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1358 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)cEo=-120V(Min) • Complement to Type 2SC3421


    Original     		PDF 2SA1358 -120V 2SC3421 O-126 -10mA; -500mA; -50mA -500mA -120V;

    2sa1358

    Abstract: TRANSISTOR A1358 a1358 transistor
    Text: 2SA1358 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1358 Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver of 60 to 80 watts • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SA1358 2SC3421 2sa1358 TRANSISTOR A1358 a1358 transistor

    c3421 transistor

    Abstract: c3421
    Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SC3421 2SA1358 c3421 transistor c3421

    c3421 transistor

    Abstract: c3421 2SA1358 2SC3421
    Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC3421 2SA1358 c3421 transistor c3421 2SA1358 2SC3421

    c3421

    Abstract: 2SC3421 2SA1358 6080w
    Text: 2SC3421 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3421 ○ 電力増幅用励振段増幅用 単位: mm • 2SA1358 とコンプリメンタリになります。 • PO = 60~80 W メインアンプドライバ段に最適です。


    Original     		PDF 2SC3421 2SA1358 c3421 2SC3421 2SA1358 6080w

    2SA1015

    Abstract: 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339
    Text: - Si € Type No. tt Í5 Manuf. n H SANYO M S TOSHIBA i NEC B ÎL HITACHI M ± FUJITSU il fâ T MATSUSHITA h m MITSUBISHI P — A ROHM * 2SA 5 1 2 —" It £ 2SA1358 2SA1096 2SB1086 * 2 SA 513 ^ JK 2SAÌ358 2SA1096 2SA934 * 2SA 516 ^ 2SA1096 2SB1086 * 2SA 516A


    OCR Scan     		PDF 2SA1358 2SA1096 2SB1086 2SA934 2SA1015 2SB1041 2SA935 2SA934 2SA854 2SA933 2SA1358 2SA1096 2SA1309A 2SA1339

    2SA1358

    Abstract: 2SC3421 A1358 TRANSISTOR A1358
    Text: 2SA1358 TO SH IBA 2 S A 1 358 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 8.3 MAX. • • • 0 £ i± cn Complementary to 2SC3421 Suitable for Driver of 60 to 80 Watts. High Breakdown Voltage.


    OCR Scan     		PDF 2SA1358 2SC3421 2SA1358 A1358 TRANSISTOR A1358

    2SA1358

    Abstract: 2SC3421
    Text: 2SC3421 T O S H IB A 2SC3421 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO FREQUENCY PO W ER A M PLIFIER APPLICATIONS 8.3 MAX. • • • 5.8 Complementary to 2SA1358 Suitable for Driver of 60 to 80 Watts Audio Amplifier High Breakdown Voltage


    OCR Scan     		PDF 2SC3421 2SA1358 2SA1358 2SC3421

    2sa1358

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1358 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: 03.1 ¿Oil . Complementary to 2SC3421 . Suitable for Driver of 60 to 80 Watts. 3- . High Breakdown Voltage. 1.0MAX. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


    OCR Scan     		PDF 2SA1358 2SC3421 -10mA, -100mA -500mA, -50mA -500mA -100mA 30LLEGT0R-EMITTER 2sa1358

    2SC3421

    Abstract: 2SA1358 B1030 AX1030
    Text: 2SC3421 TO SHIBA 2SC3421 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. • • • 53.1 ±0.1 Complementary to 2SA1358 Suitable for Driver of 60 to 80 Watts Audio Amplifier High Breakdown Voltage


    OCR Scan     		PDF 2SC3421 2SA1358 2SC3421 2SA1358 B1030 AX1030

    2SA1358

    Abstract: 2SC3421
    Text: 2SC3421 TO SH IBA 2SC3421 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. • • • 43.1 ±0.1 Complementary to 2SA1358 Suitable for Driver of 60 to 80 Watts Audio Amplifier High Breakdown Voltage


    OCR Scan     		PDF 2SC3421 2SA1358 2SA1358 2SC3421

    2sc3421

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3421 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . Complementary to 2SA1358 . Suitable for Driver of 60 to 80 Watts Audio Amplifier . High Breakdown Voltage MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC3421 2SA1358 100mA 500mA, 500mA 2sc3421

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3421 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 1 mm M T • U nit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 8.3 M AX. 53.1 ± 0 . 1 S.8 Complementary to 2SA1358 Suitable for Driver of 60 to 80 W atts Audio Amplifier High Breakdown Voltage


    OCR Scan     		PDF 2SC3421 2SA1358

    Untitled

    Abstract: No abstract text available
    Text: 2SA1358 SILICON PNP EPITAXIAL TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. U n it in min 6.3 M A X . • • • Complementary to 2SC3421 Suitable for Driver of 60 to 80 Watts. High Breakdown Voltage. MAXIMUM RATINGS (Ta = 25°C) SYMBOL • RATING


    OCR Scan     		PDF 2SA1358 2SC3421 --100mA --500mA, --50mA -500m -100m --10V,

    transistor a1358

    Abstract: a1358 a1358 transistor 2SA1358 2SC3421 toshiba 2sa-1358
    Text: TOSHIBA 2SA1358 2 S A 1 358 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATIONS. 8.3 MAX. • • • Complementary to 2SC3421 Suitable for Driver of 60 to 80 Watts. High Breakdown Voltage.


    OCR Scan     		PDF 2SA1358 2SC3421 961001EAA2' transistor a1358 a1358 a1358 transistor 2SA1358 toshiba 2sa-1358